TRANSISTOR 2SK1112 Search Results

TRANSISTOR 2SK1112 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR 2SK1112 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK1112 Abstract: S2-5V relay transistor 2sk1112 Contextual Info: TOSHIBA Discrete Semiconductors 2SK1112 Field Effect Transistor Silicon N Channel MOSType L2-t>MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Fe a tu re s • 4-Volt Gate Drive • Low Drain-Source ON Resistance	OCR Scan	2SK1112 20kii) S2-5V relay transistor 2sk1112	PDF
L5A relay Abstract: 2SK1112 Contextual Info: 2SK1112 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7T-MOSm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Unit in mm 6.8MAX FEATURES : • 4-Volt Gate Drive • Low Drain-Source ON Resistance	OCR Scan	2SK1112 20kfl) L5A relay 2SK1112	PDF
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1112 Field Effect Transistor Silicon N Channel MOSType L2-jt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance • R DS(ON) = 0.12£2 (Typ.)	OCR Scan	2SK1112	PDF
2SK1112 Abstract: transistor 2sk1112 Contextual Info: TOSHIBA 2SK1112 Field Effect Transistor Silicon N Channel MOS Type L2-rc-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance " R ds (ON) = 0 .1 2£2 (Typ.)	OCR Scan	2SK1112 2SK1112 transistor 2sk1112	PDF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643	PDF
HC 8436 Abstract: marcon capacitor ce marcon CE capacitor seiko hc 1000 transistor lr 3303 CACFM D1NS4 diode transistor 2sC3279 S-8435 equivalent tr 2SC3279 equivalent Contextual Info: STEP-UP SWITCHING REGULATOR S -8 4 3 5 /8 4 3 6 Series The S-8435/8436 Series is a CMOS step-up sw itching regulator that consists of a reference voltage source, a CR oscillation circuit, a pow er MOS FET, a diode, and a com parator. T he output voltage is	OCR Scan	S-8435/8436 S-8435 S-8436 RCH654 2SK1112* RCH855 2SK1112. HC 8436 marcon capacitor ce marcon CE capacitor seiko hc 1000 transistor lr 3303 CACFM D1NS4 diode transistor 2sC3279 S-8435 equivalent tr 2SC3279 equivalent	PDF
Marcon capacitor Co Abstract: CACFM D1N54 2SC3279 equivalent 2SK1112 CACFM 1A220M Marcon 2SC3279 41178 8436 Contextual Info: Contents Features . 1 Applications. 1 Block d ia g ra m . 1 Pin A s s ig n m e n t. ; .	OCR Scan	RCH855 47//H) 2SK1112* /50mA 2SK1112. Marcon capacitor Co CACFM D1N54 2SC3279 equivalent 2SK1112 CACFM 1A220M Marcon 2SC3279 41178 8436	PDF
MG150Q1JS44 Abstract: 1S1885 diode MG150Q1JS Contextual Info: MG150Q1JS44 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q1JS44 Unit in mm High Power Switching Applications Chopper Applications • High input impedance · High speed: tf = 0.4µs max. · Low saturation voltage · Enhancement−mode · The electrodes are isolated from case.	Original	MG150Q1JS44 2-109C1A MG150Q1JS44 1S1885 diode MG150Q1JS	PDF
j2y transistor Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497 Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi conductor is correct for your application, this brochure outlines maximum ratings,	OCR Scan	O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497	PDF