TRANSISTOR 2SK 12 Search Results

2SK1717

Abstract: toshiba diode 3D
Contextual Info: TOSHIBA SEMICONDUCTOR TECHNICAL DATA TOSHIBA FIELD EFFECT TRANSISTOR 2SK 1717 SILICON N CHANNEL MOS TYPE L2—7T—MOS IV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS

2SK820

Abstract: TD4001 TD400
Contextual Info: DATA SHEET Preliminary NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK 820 The 2SK820 is N-channel MOS Field E ffect Power PACKAGE DIM EN SIO N S Transistor designed fo r sw itching power supplies, DC-DC in m illim e te rs (inches)

transistor 2sk

Abstract: transistor+2sk
Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2313 DATA SILICON N CHANNEL MOS TYPE L2-tt-M O SV (2SK 2313) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE

transistor Sh 550

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2232 SILICON N CHANNEL MOS TYPE DATA L2- 7 T - M O S V (2SK 2232) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR TO SH IBA TECHNICAL 2 S K 1 489 DATA SILICON N CHANNEL MOS TYPE 7T- M O S II •5 (2SK 1489) INDUSTRIAL APPLICATIONS U n it in mm CHOPPER REGULATOR APPLICATIONS. HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH PO W ER AM PLIFIER APPLICATION Unit in mm 1 5.9 M A X. • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs|= 4.0S Typ. • Complementary to 2SK 1529

transistor Sh 550

Abstract: transistor 2sk 2232
Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2232 DATA SILICON N CHANNEL MOS TYPE L2- 7 T - M O S V (2SK 2232) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE

L713

Contextual Info: TOSHIBA {DISCRETE/OPTO} Ti 99D 16713 9097250 TOSHIBA CDISCRETE/OPTO ^osfiilx D E ^ T D T V B S O DD1 L713 14 D r - s î ' TOSHIBA FIELD EFFECT TRANSISTOR’ SEMICONDUCTOR I3 2SK 538 TECHNICAL DATA SILICON N CHANNEL MOS TYPE 7T-M0S) INDUSTRIAL APPLICATIONS

TAA 785 A IC

Contextual Info: 6427525 N E C ELECTRONICS INC 98D 18931 w m Ê k N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR IB D ES C R IP TIO N 2SK785 B E | t427S5S 0018131 3 | The 2SK 785 is N-channel MOS Field Effect Power Transistor PACKAG E D IM E N S IO N S designed for switching power supplies DC-DC converters.

2SK737

Abstract: FO276
Contextual Info: 6427525 N E C ELECTRONICS 98D INC 18911 D l-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK737 D E S C R IP T IO N The 2SK 737 is N-Channel MOS Field Effect Power Transistor P A C K A G E D IM EN SIO N S designed for solenoid, motor and lamp driver. FEA TU RES

Transistor D 2599

Contextual Info: TO SH IB A 2SK 2599 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV] 2SK2599 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1. Low Drain-Sorce ON Resistance : R d S(ON = 2.9H (Typ.)

Contextual Info: N E C ELECTRONICS INC Tö DE | b4S7S2S OOlñññM T |~ B 8 4 D T - 3 ? - . : '¡^ 7 iïTap, - N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ^. y. 2SK703 D E S C R IP T IO N The 2SK 703 is N-Channel MOS Field Effect Power Transistor P A C K A G E D IM EN SIO N S

transistor et 454

Abstract: 2sk542 DC-DC H14 F530 T108 T460
Contextual Info: mm & ma SEC M O S M nft& }£:s<r7 M O S Field Effect P o w er Transistor m = f= r l\T X 2SK542 N f t ^ /^ '° 7 - M O S FET x > r i i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK 542Ü , FET ^ J fiia /P A C K A G E DIMENSIONS

2SJ197

Abstract: 2SK1483
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1483 N-CHANNEL MOS FET FOR SWITCHING The 2SK 1483 is an N-channel vertical type M OS F E T switching

2SK61

Abstract: 2SK610 2SK61GR AI810 2SK61-Y 2SK61-G transistor 2sk 2SK61-GR L2A8 Scans-00106346
Contextual Info: 2SK SILICON N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR Unit in mm O O VHF*J#lffiffl o FM Tuner and. V H F A m p l i f i e r Appl i c a t i o n s • JiSfflfftaS'J'S W ; 5 .1 MAX. r N F = 2.5dB Typ. ( f = l O O M H z ) t ì s => > * 9 ? 's * £ I« ; 4 = 9 m y (Typ. )

2SK1581

Abstract: FET MARKING TC-2296A
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK 1581 N -C H A N N E L M O S FET FOR S W IT C H IN G The 2SK1581, N-channel vertical typ e MOS FET, can be driven by PACKAGE DIMENSIONS Unit : mm 2.5 V power supply. 2.8± 0.2 <-•O do +l Ò 1.5 As the MOS FET is driven by low voltage and does not require con­

TC-7606

Abstract: 2SK1283
Contextual Info: M O S Field Effect Pow er Transistor 2SK1283 7 /< 2SK 1283 fi, F E T T , N > 5 V m i l 1? ; * I C X 4 7 f > FET K f f p '- 'V — M O S K x 6 X T to i& ir y f& ÏA T , y i / / 0 ft -M O S ', x ^ y f -> y m t b t z ls b , i - > y°ff m ï\n z- g kïà T to

2SK2510

Abstract: Diode KD 521 a transistor DK qj diode sg 5 ts b 772 p
Contextual Info: h 7 > y X ? MOS Field Effect Transistor 2SK2510 FET iif f l 2SK 2510ßN 3l * * ; M t I ! / t 7 - M O S F E T T ', 7 « o 4y % m > f f l m . x t 0 R ds on 1 = 2 0 m û l ^ : ( @ V gs = 1 0 V , R ds (on) 2 = 3 0 m ( @ V gs = 4 V , Id = 2 0 A ) Id = 2 0 A )

transistor jsx

Abstract: 2SK681 ipw fet s0822 t460 transistor
Contextual Info: ^ £ — 5 7 . 5 / — h M O S W * im . R $ b $ k '< t7 - Y :7 > ï ï * 9 M O S Field Effect Power Transistor 2SK681 MOS F E T 2SK 681Ü , N f - - v ^ . ; H i^ > 'f I7 - M 0 S t i i z «t i m ^c7 K 7 # x a 7 f > / FETT, f v q x ¥ i i : mm) 5 V'ffiiH*IC<7)

DIODE IN 4002 424

Abstract: transistor 2sk c954 2SK2541 TI 945 nec 501 t Transistor DF- RO
Contextual Info: =t — • 5 > 2 / - h MOS Field Effect Transistor 2SK2541 n ^ - v t ^ u m o s ¡ ü iâ x - 'f > y ^ < f e t 7 ' m 2SK 2541IÌ 1.5 V l E t t ^ 'f 7 “<7 N 51 + ^^iÉ M O S FET?'<feU, f£ 1 Œ ?'![*»)?' t , *'0 K 7 ' f 7 f S ? f l t 3 *s' * ^ o jg h 7 > v

2SK19

Abstract: transistor 2sk19 2SK19BL 2SK19-BL transistor 2sk 70 transistor 2sk 220O OAT 3Z transistor kt 301
Contextual Info: 19 2SK o vv * O V H P fci*« « o PM T u n e r ^ IL I C O N N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR +m » - a n d VHP A m p l i f i e r U n it A p p lic a tio n s . * 5 .8 MAX. W iJiU i9 ^ *S ^ > „ i S 3 ^ A t J - f >" ^ : i Ops = ! W * - * s 20dB (T y p . (f= 1 0 0 M H z )

2SK1254

Abstract: 2sj177 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully m oulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

2sj2 high voltage p channel mosfet

Abstract: 2sj2 high voltage mosfet 2SK1778 2SJ182 2SJ299 2SK1204 2SK1763 2SJ175 2SK1665 2SK1776
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2SK150

Abstract: 2SK12 2SK15 transistor 2sk 2SK120 2SK11 2SK12-Y 2SK150 A 2SK110 SK 10 BAT 065
Contextual Info: 2 5 ,1 1 5 ' tJ n y n * v % i \ > m 8 i e w i m m ^ y v z & SILICON N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR 2 5 ,1 2 - i 2 S K 15 ii it x o is « « « « * o 1 O D C , A C S S A * S !ttlE l« iffl O O ^ O X -1 7 f- •/