TRANSISTOR 2SK 12 Search Results

2SK772

Abstract: 140je N0239
Contextual Info: Ordering number: EN 2392A N0.2392A 2SK 772 N-Channel Junction Silicon FET SA \YO i AF Amp Applications Applications Variable resistors, analog switches, AF amp, constant-current circuit Features Adoption of FBET process Absolute Maximum Ratings at Ta=25°C

transistor 2sk 11

Abstract: 2sk1363
Contextual Info: TOSHIBA 2SK1363 Field Effect Transistor U n it in m m Silicon N Channel MOS Type n-MOS 11.5 15.8 ± 0 -5 gf 3.6 ± 0 .2 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' F*ds(on) = 1-1Q (Typ.) • High Forward Transfer Admittance

2SK445

Contextual Info: ?Tì?q7t. opiss 7 b asi Ordering number: EN 1 4 3 9 A SA i YO í N0.1439A 2SK 445 N-Channel Junction Silicon FET i Video Camera Applications Features • Large |yfs| • Small cjs$ • Very low noise figure • High frequency, audio frequency, low noise amp

2SK222

Abstract: LM 2003A LM 8361
Contextual Info: Ordering number:EN 836F _ 2 S K 2 2 2 N-Channel Junction Silicon FET SAiYO i Low-Noise AF Amp Applications FEATURES * Ultra low noise figure * Large lyfsl. • Low gate leakage current. ABSOLUTE MAXIMUM RATINGS/Ta = 25° C unit V Drain-source voltage

2SK2388

Abstract: 1B10B N3I3
Contextual Info: TOSHIBA Discrete Semiconductors 2SK 2388 Unit in mm Silicon N Channel MOS Type c - MOS IV High Speed, High Current Switching Applications. Chopper Regulator, DC-DC Converter and Motor Drive Applications. • • • • Low Drain-Source ON Resistance: fSs{ON)= 1-8£2(Typ.)

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2365/2SK2366 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel MOS Field Effect T ransistor designed fo r high vo ltag e sw itching applications. PACKAGE DIMENSIONS

hp 502 cold transistor

Abstract: 1H4 tube pc-9801 iw 1688 NL128102AC31-01 3460G
Contextual Info: DOD-H-6024 l/3g NEC T F T Type C O L O R . No . L O O M O D U L E N L 1 2 S 1 0 2 A G 3 1 — O 1 5 1 c m C2 O 1 Type . S X G A A n a 1 o s . F u i 1 — c o 1 ox* First editiOQ DATA SHEET Al 1 information io this docunent are subject to change without prior notice.

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching