TRANSISTOR 2N3904 E 25 Search Results

2n3904

Abstract: 2n3904 225 2n3904 npn 2N3903 transistor switching transistor 30v npn transistor 2N3905 TRANSISTOR 2N3904 E 25
Contextual Info: 2N3903 2N3904 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3903 and 2N3904 types are NPN silicon transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N3905 and 2N3906.

2N3904

Abstract: 2n3904 application 2n3904 TO-92 2N3904 dimension TRANSISTOR 2N3904 E 25 22N3904 2N3906 2N3906E
Contextual Info: 2N3904 NPN Silicon Transistor Descriptions PIN Connection • General small signal application • Switching application C Features B C B E • Low collector saturation voltage • Collector output capacitance • Complementary pair with 2N3906 E TO-92 Ordering Information

2N3055 TO220

Abstract: NPN Transistor 2N3055 darlington 100 amp npn darlington power transistors transistor BC107 specifications tip122 tip127 audio amp NPN Transistor TO92 10 amp npn darlington power transistors transistor 2n3053 DATASHEET Transistor BC107 2N3055 NPN Transistor
Contextual Info: TRANSISTOR SPECIFICATIONS - A TYPICAL TABLE FROM A CATALOGUE Transistor Polarity Number BC107 BC108 2N3904 ZTX300 2N3053 BFY51 TIP31A 2N3055 Case IC max VCE hFE Power NPN NPN NPN NPN NPN NPN NPN NPN Style TO18 TO18 TO92 E-line TO39 TO39 TO220 TO3 mA 100

PNP switching transistor 2N3906 mhz

Abstract: transistor 2N3905 2n3906 2N3906 NPN Transistor 2N3904 CENTRAL
Contextual Info: 2N3905 2N3906 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3905 and 2N3906 types are PNP silicon transistors designed for general purpose amplifier and switching applications. NPN complementary types are 2N3903 and 2N3904.

2N3904

Abstract: 2N3906
Contextual Info: 2N3904 NPN SMALL SIGNAL TRANSISTOR Features Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available 2N3906 E A TO-92 B C Mechanical Data Case: TO-92, Plastic

2n3904 transistor

Abstract: 2N3904, transistor 2N3904 2n3904transistor ct 2N3904
Contextual Info: Nnnam T O -9 2 P iasti -E n c a p s u la te T ra n s is to rs 2N3904 TRANSISTOR N P N FEATURE Powe dissipation Pcm : 0.625 W (Tamb=25°C) Collecto cu ent : 0-2 A 1c m Collecto -base voltage V(br)cbo •60 V Ope ating and storage junction temperature range

transistor E 13009

Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
Contextual Info: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10

Contextual Info: 2N3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCeo =40V • Collector Dissipation: Pc max =625mW T O -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

2N3903 transistor

Contextual Info: rt: N AMER PHILIPS/DISCRETE 25E D bbS'BTBl 0Q174b2 2 I A 2N3903 2N3904 T -3 £ ~ - SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for high-speed, saturated switching applications for industrial service.

2N3903

Contextual Info: 2N3903 S / S TR ELECTRONICS GENERAL PURPOSE TRANSISTOR Collector-Emitter Voltage: V c e o = 4 0 V Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

2N3904

Abstract: 2n3904 specification NPN Transistor TO92 40V 200mA TRANSISTOR 2N3904 E 25 2N3904 transistor free h 2n3904 2N3904G 2N3904-Y transistor NPN 2N3904 2n3904 datasheet
Contextual Info: 2N3904 0.2A, 60V NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 Power Dissipation PCM: 625mW Ta=25°C Collector Current ICM: 200mA Collector – Base Voltage V(BR)CBO: 60V

NSB3881

Abstract: NSB5881 INS8060 74C911 NSA1298 NSN581 MICROPROCESSOR Z80 7segment 4-DIGIT 7-SEGMENT LED DISPLAY datasheet MULTIPLEX MM2114 NSB7881
Contextual Info: Fairchild Semiconductor Application Note 257 May 1981 I. INTRODUCTION The MM74C911, MM74C912 and MM74C917 are CMOS display controllers that control multiplexing of 8-segment LED displays. These devices each have an on-chip multiplex oscillator and associated logic to easily implement multi-digit

2n3904 specification

Abstract: 2n3904 TO-92 2N3904 transistor ST 2N3904 ST 2n3904 TRANSISTOR PNP 2N3904 230 2N3904 equivalent DELTA 807 2N3904-AP 2N3906
Contextual Info: 2N3904 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment 2N3904 2N3904 TO-92 / Bulk 2N3904-AP 2N3904 TO-92 • ■ ■ / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY

transistor ST 2N3904

Abstract: ST 2n3904 TRANSISTOR PNP 2n3904 specification 2n3904s 2N3904 TRANSISTOR 2N3904 E 25 34-2N3904 ST 2n3904 2N3906
Contextual Info: 2N3904 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ Type Marking 2N3904 2N3904 SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE IS 2N3906 APPLICATIONS WELL SUITABLE FOR TV AND HOME

Contextual Info: : Sv m Se m i ; T O -92 Plastic Encapsulate 5YN5EMI 5EMICOMDUCTOR 2N3904 TRANSISTOR NPN Transistors TO — 92 t-\ l o o a l FEATURE Power dissipation PCM 1. EMITTER : 0.625 W (Tamb=25 °C) 2.BASE Collector current I cm : 0.2 A 3. COLLECTOR Collector base voltage

TRANSISTOR 2N3904

Abstract: MAM279 Probe Oscilloscope 2n3904 philips 2n3904 specification NPN, Si, POWER TRANSISTOR, PLASTIC 2n3904 950 EB-500 2N3904 2N3906
Contextual Info: Philips Semiconductors Product specification NPN switching transistor 2N3904 FEATURES PINNING • Low current max. 200 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 collector 2 base 3 emitter • High-speed switching. DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic

TRANSISTOR 2n3904

Abstract: 2n3904 specification 2n3904 950 2N3904 2N3906 BP317 2n3904 philips ST 2n3904
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3904 NPN switching transistor Product specification Supersedes data of 1997 Jul 15 1999 Apr 23 Philips Semiconductors Product specification NPN switching transistor 2N3904 FEATURES PINNING • Low current max. 200 mA

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER  FEATURES * Collector-Emitter Voltage: VCEO=40V * Complementary to 2N3906  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N3904L-AB3-R 2N3904G-AB3-R

2N3904L

Abstract: 2n3904 npn 2N3904G 2N3904 transistor free
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC MAX =625mW * Complementary to 2N3906 „ ORDERING INFORMATION Ordering Number Lead Free

Contextual Info: N AMER PHILIPS/DISCRETE b=JE D bbS3T31 OGSfllHD 7D7 I IAPX 2N3904 SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic TO-92 envelope, primarily intended for high-speed, saturated switching applications fo r industrial service. PNP complement is 2N3906.

2N3904L

Abstract: TRANSISTOR 2N3904
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC MAX =625mW * Complementary to 2N3906 *Pb-free plating product number: 2N3904L „ ORDERING INFORMATION

fsp3601

Abstract: SCD34 Step-up PWM DC/DC Converter tssop8 AP2305 h 2n3904 MARKING U1 msop8 2N3904 2N3906 470PF TL431
Contextual Info: STEP-UP DC/DC CONTROLLER FSP3601 „ FEATURES z z z z z z z z z „ GENERAL DESCRIPTION Wide supply voltage operating range: 1.8 to 15V Reference voltage precision: 4% Low current consumption: Operation Mode 5.5mA Standby Mode: 1µA High speed oscillator frequency: 1MHz max

Contextual Info: 2N4123/4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: Vceo = 2N4123: 30V 2N4124: 25V • C ollector Dissipation: P c max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage :2N 4123

STANDARD PIN DETAILS OF 2N3904 NPN TRANSISTOR

Abstract: MC310 samwha SE GENERIC CAPACITOR samwha capacitor SAMWHA CE zxsc310 1N5818 2N3904 pin diagram C310
Contextual Info: MC310 Single or Multi Cell LED Driver Solution with Programmable Output Current General Description The MC310 is a single or multi cell LED driver designed for LCD backlighting applications. The input voltage range of the device is between 0.8V and 8V. This means the MC310 is compatible