TRANSISTOR 2L Search Results

motorola transistor ignition

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN SILICON POWER TRANSISTOR

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

MMBT5401

Abstract: MMBT5401-AE3-R MMBT5401L MMBT5401L-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 2 *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 1 MARKING 3 2L SOT-23 *Pb-free plating product number:MMBT5401L

J162

Abstract: transistor j162 SATCOM ASAT35L
Contextual Info: ASAT35L NPN RF POWER TRANSISTOR DESCRIPTION: The ASAT35L is a Common Base Transistor Designed for L-Band Satcom Amplifier Applications. PACKAGE STYLE 400 2L FLG FEATURES INCLUDE: • Input/Output Matching Networks • Gold Metallization • Emitter Ballasting

MSC80278

Contextual Info: MSC80278 NPN RF TRANSISTOR DESCRIPTION: The ASI MSC80278 is a Silicon NPN Microwave Transistor Supplied in a Common Emitter Package, Designed for linear Applications. PACKAGE 250 2L FLG FEATURES: • • • Emitter Ballasted Gold Metallization Hermetically sealed Package

MSC80183

Abstract: MSC85623
Contextual Info: MSC80183 NPN RF TRANSISTOR DESCRIPTION: The ASI MSC80183 is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for Amplifier/Oscillator Applications up to 2.3 GHz. PACKAGE 230 2L FLG FEATURES: • • Hermetically Sealed Package

2L smd transistor

Abstract: CMBT5401 TRANSISTOR SMD MARKING 2l smd 2l
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

MSC80213

Abstract: MSC85623
Contextual Info: MSC80213 NPN RF TRANSISTOR DESCRIPTION: The ASI MSC80213 is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for general purpose Applications up to 2.3 GHz. PACKAGE 230 2L FLG FEATURES: • • Hermetically Sealed Package Gold Metallization

SOT333

Abstract: SOT423 sot468 thermal compound wps II TO metal package aluminum kovar SOT439 Transistor Packages sot262 SOT443 rf transistor smd pages
Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 4 RF and microwave transistor packages RF AND MICROWAVE TRANSISTOR PACKAGES handbook, halfpage The packages of electronic devices are, in general, designed to: metal cap – Protect the electronics from mechanical damage

2L smd transistor

Abstract: TRANSISTOR SMD MARKING 2l smd transistor 2l CMBT5401
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

AM1011-075

Contextual Info: AM1011-075 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AM1011-075 is a high power Class C transistor designed for L-Band Avionics pulse output and driver applications. PACKAGE STYLE .400 2L FLG A 2xB I • Internal Input/Output Matching Networks

world transistor

Abstract: JAPAN transistor World transistors
Contextual Info: Renesas Technology Improves Transistor Performance with New Low-cost Fabrication Technology for 45-nanometer Process Generation and Beyond Redesigned p-type transistor with two-layer metal gate and n-type transistor with polysilicon gate achieve world top-level drive performance

MRF182

Abstract: transistor MRF182 1202 transistor 3004 fet 945 TRANSISTOR
Contextual Info: MRF182 RF POWER FET TRANSISTOR DESCRIPTION: The ASI MRF182 is an RF power field effect transistor, N-Channel Enhancement-Mode lateral MOSFET. PACKAGE STYLE .350 2L FLG FEATURES INCLUDE: • Bradband performance from HF to 1 GHz • Omnigold Metalization System

high frequency transistor

Abstract: S21C2
Contextual Info: OSC-0.3CP NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE .138 2L PILL DESCRIPTION: The OSC-0.3CP is a High Frequency Transistor designed for C Band Oscillator Applications. 0.095 0.105 0.023 0.027 FEATURES: • POUT = 320 mW Typ. at 7.5 GHz • Gold Metalization

AM0912-150

Abstract: JTIDS 2L TRANSISTOR "RF Power Transistor"
Contextual Info: AM0912-150 RF POWER TRANSISTOR PACKAGE - .400 X .500 2L FLG DESCRIPTION: The ASI AM0912-150 is a Common Base Transistor Designed for TCAS and JTIDS Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching

high frequency transistor

Contextual Info: 2SC2951 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. PACKAGE STYLE .200 2L FLG Dimensions are in mm FEATURES: • POSC = 630 mW Typical at 7.5 GHz

AVF600

Abstract: ASI10576
Contextual Info: AVF600 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AVF600 is a high power pulsed transistor, designed for JFF avionics applications. It is designed for operation under short pulse width & low cycle and capable of withstanding 25:1 load

2SC2951

Abstract: high frequency transistor
Contextual Info: 2SC2951 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. PACKAGE STYLE .200 2L FLG FEATURES: • POSC = 630 mW Typical at 7.5 GHz • Omnigold Metallization System

MSC81600M

Abstract: transistor 1803 MSC81600
Contextual Info: MSC81600M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI MSC81600M is a high power pulsed transistor, designed for IFF avionics applications. It is designed for operation under short pulse width & low cycle and capable of withstanding 25:1 load

Contextual Info: CMBT5401 SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N -P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1 .1 5 0.9Ö~^ ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

CD2397

Abstract: cd2397 Transistor 2L TRANSISTOR "RF Power Transistor"
Contextual Info: CD2397 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD2397 is a common base NPN Bipolar Microwave Transistor. It is designed for Pulse Applications within the 960 to 1215 MHz Avionics frequency range. PACKAGE STYLE .230 2L FLG FEATURES: • Common Base Pulse at 43V

AM81214-015

Abstract: transistor j6
Contextual Info: AM81214-015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG DESCRIPTION: The ASI AM81214-015 is an NPN silicon bipolar transistor designed for L-Band pulsed radar applications. It utilizes internal matching and gold metalization for high reliability and good VSWR capability.

MSC85623

Contextual Info: MSC85623 NPN RF TRANSISTOR DESCRIPTION: The ASI MSC85623 is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for RF Amplifier and Oscillator Applications up to 3.0 GHz. PACKAGE 230 2L FLG MAXIMUM RATINGS IC 150 mA VCEO 14 V VCB

2sc4571

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4571 is a low supply voltage transistor designed for UHF Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the