TRANSISTOR 2FC Search Results

transistor 2fc

Contextual Info: Central CMST2907A TM Semiconductor Corp. SUPERminiTM PNP SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMST2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed

transistor 2fc

Abstract: CMST2907A
Contextual Info: Central CMST2907A SURFACE MOUNT SUPERminiTM PNP SILICON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMST2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed

sot-323 Marking LG

Abstract: 2FC 495 MARKING CODE c26
Contextual Info: Central" CMST2907A Semiconductor Corp. SUPERmini PNP SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMST2907A type is a PNP silicon transistor manufactured by the epi­ taxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed

Contextual Info: Central“ CMST2907A Semiconductor Corp. SURFACE MOUNT SUPERmini PNP SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMST2907A type is a PNP silicon transistor manufactured by the epi­ taxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed

Contextual Info: MAGX-000245-014000 GaN on SiC HEMT Power Transistor 14 W, DC - 2.5 GHz, CW Power Rev. V2 Features •       MAGX-000245-014000 GaN on SiC Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation

transistor 2fc

Contextual Info: CMST2907A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, designed

CMST2907A

Contextual Info: CMST2907A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, designed

KF 25 transistor

Abstract: 2SD1947A
Contextual Info: TO SH IBA 2SD1947A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD1947A HIGH CURRENT SWITCHING APPLICATIONS LAMP, SOLENOID DRIVE APPLICATIONS 10 ±0.3 High DC Current Gain : hjrE = 500~ 1500 l£ = lA Low Collector Saturation Voltage : VCE (sat) = 0.3V (Max.) (IC = 5A)

pulse generator MC14001

Abstract: MC14001 LM005 MC14001 MOTOROLA AN569 IRFPG50 4I501 DS3823
Contextual Info: Order this data sheet by MTH6N100/D , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS . These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators,

2SD1947A

Contextual Info: TO SH IBA 2SD1947A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD1947A Unit in mm HIGH CURRENT SWITCHING APPLICATIONS LAMP, SOLENOID DRIVE APPLICATIONS r • • High DC Current Gain : hjrE = 500~ 1500 l£ = lA Low Collector Saturation Voltage : VCE ( s a t ) = 0.3V (Max.) (IC = 5A)

Contextual Info: TOSHIBA HN2C01 FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS H N 7 f m • ■ F 11 m Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2.1 +0.1 • Small Package (Dual Type) • High Voltage and High Current : VCE0 = 50V, IC = 150mA (MAX.)

Contextual Info: <s/\ £U7 £Pioc/uc£i, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 RF POWER TRANSISTORS 2N4440 Silicon N-P-N Overlay Transistor Fnturm: For Class A, B, or C VHF/UHF • S W output min. at 400 MHz

d3055

Abstract: u3055 18-0IT
Contextual Info: CED3055L5/CEU3055L5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES • 5 5 V , 8 A , R d s on =1 50m Q @ Vgs=1 0V. R d s (on )=1 80m Q @ Vgs=5V. • Super high dense cell design for extremely low Rds(on). • High power and current handling capability.

CEM9410A

Abstract: B250P ID73
Contextual Info: M a rc h 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 7 .3 A , RDS ON =28mQ @ V g s =1 0V. Rds(on)=42itiQ @V gs=4.5V. D D D • Super high dense cell design for extremely low R ds (on ). • High power and current handing capability.

smd code book transistor

Abstract: TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE 5c smd transistor c015 P-T0252-3-1 D 92 M - 02 DIODE SMD TRANSISTOR MARKING 5c all transistor book SMD TRANSISTOR MARKING fq smd code book KO
Contextual Info: BSP 92 Infineon t « c h n o l o g i •* SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0 .8 .-2 .0 V Pin 1 Type ^bs b BSP 92 -240 V -0.2 A Type BSP 92 Ordering Code Q62702-S653 Pin 2 °D S (on) Package

pmi OP97

Abstract: pmi op27 HQ19 pml 003 am PMI OP44 PMI OP AMP PMI OP 15 LM394BN 2N4124 SSM-2210
Contextual Info: ANALOG DEVICES/ Pill DIV 2LE D pm! • 0ölböG5 GOQÖIÖ? 1 ■ 'r ' 4 3 ^ S S M -2210 AUDIO DUAL MATCHED NPN TRANSISTOR s P re c is io n M o n o lit h ic s In c. FEATURES • Very Low Voltage N o ise @ 100Hz, 1n V/VRz MAX • Excellent Current Gain M a tc h .0.5% TYP

Contextual Info: A N A L O G D E V I C E S / PM I DIV pmi 2fc>E D • OölböG5 G0GÖ1Ö7 =1 ■ T M -h -is a » * 0? Precision Monolithics Inc. Very Low Voltage N o ise @ 100Hz, 1nV/VRz MAX Excellent Current Gain M a tc h .0.5% TYP Tight VBE Match Vog) . 200rV MAX

2chj

Abstract: BA6790FP
Contextual Info: BA6790DFP B A 6 7 9 0 FP c d t v — v m 'ì n - v = 7 'f / < Power driver for CD player • ii-Jfé'+ìiH/Dim entions Unit : mm BA6790FP«, C D ^ U — Ì- ? iES!)ffl4chAU BTL K v •f^ 'C T o 5VU- +' i l U— ifl, 2fcHSOP28PirV\°-;/^v £ S f f l L T l'Z tz S t) , -b-y

66a hall sensor

Contextual Info: NJW4302 THREE-PHASE DC BRUSHLESS MOTOR CONTROL IC • GENERAL DESCRIPTION The NJW4302 is a three-phase DC brushless motor pre-driver IC for precision applications. The NJW4302 consists of PWM driver, motor velocity control, FG Frequency Generator output, and voltage

NJW4302

Abstract: QFP44 motor driver NJM4302 NJW4302FA1 QFP44 shunt resistor current motor capacitor 100 microfarad 50v 47 microfarad capacitor 4.7 microfarad capacitor
Contextual Info: NJW4302 THREE-PHASE DC BRUSHLESS MOTOR CONTROL IC • GENERAL DESCRIPTION The NJW4302 is a three-phase DC brushless motor pre-driver IC for precision applications. The NJW4302 consists of PWM driver, motor velocity control, FG Frequency Generator output, and voltage

QFP44 motor driver

Abstract: NJM4302 NJW4302 NJW4302FA1 QFP44 ir cut filter driver ic
Contextual Info: NJW4302 Preliminary THREE-PHASE DC BRUSHLESS MOTOR CONTROL IC • GENERAL DESCRIPTION The NJW4302 is a three-phase DC brushless motor pre-driver IC for precision applications. The NJW4302 consists of PWM driver, motor velocity control, FG Frequency Generator output, and voltage

MSMD022P1C

Abstract: FPG-C32T2 panaterm setup software
Contextual Info: Motion Control Solutions Minas A4/A4N/E Servo Drives/FP-Series PLCs 04/2008 Panasonic Motion Control Solutions Overview FP-SERIES PLCs A MINAS A4 /A4N/A4P/E SERIES SERVO DRIVES B SOFTWARE Control Configurator PM 2008 2008 Panasonic Panasonic Electric Electric Works

CA3031

Abstract: CA3005 or CA3006 inverted welding machine schematic diagram .1microfarad capacitor transistor bf 175 RCA Transistors CA3034V1 RCA transistor CA3005 CA3004
Contextual Info: This Manual, like its preceding edition, has been prepared to provide an understanding of the basic princi­ ples involved in the design and application of linear integrated circuits. It may be used as a guide by circuit and systems designers in determining optimum design

sled motor

Abstract: 4851-4 EN4851 2Sc3650 equivalent block diagram of VCD and its functions SB07-03C servo iai sanyo sled
Contextual Info: Ordering number : EN4851 Monolithic Digital IC LB8107M Portable CD Player Actuator Driver Overview Package Dimensions The LB8107M is a portable CD player mechanism actuator driver. It operates on a 2.4 V power supply, which corresponds to two rechargeable Ni-Cd cells.