TRANSISTOR 28M Search Results

marking 8A sot223

Abstract: TS16949 ZXTN19020DG ZXTP19020DG ZXTP19020DGTA
Contextual Info: ZXTP19020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 8A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 3.0W Complementary part number ZXTN19020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor

ZXTN19020DZ

Abstract: ZXTP19020DZ ZXTP19020DZTA TS16949
Contextual Info: ZXTP19020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 2.4W Complementary part number ZXTN19020DZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor

Contextual Info: ZXTP19020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 8A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 3.0W Complementary part number ZXTN19020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor

X5T849

Abstract: ZX5T849G ZX5T849GTA ZX5T849GTC
Contextual Info: ZX5T849G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in

ZXTN2007G

Abstract: ZXTN2007GTA ZXTN2007GTC zxtn
Contextual Info: ZXTN2007G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

ZXTN

Abstract: sot223 device Marking ZXTN2007G ZXTN2007GTA ZXTN2007GTC
Contextual Info: ZXTN2007G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

diode BB102

Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

3SK238

Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

HITACHI SMD TRANSISTORS

Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,

SOT89 transistor marking 4A

Abstract: SOT89 transistor marking 4A high frequency ZXTN19055DZTA ZXTN19055DZ s75 transistor
Contextual Info: ZXTN19055DZ 55V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 55V IC cont = 6A VCE(sat) < 60mV @ 1A RCE(sat) = 28m⍀ PD = 2.1W Description C Packaged in the SOT89 outline this low saturation 55V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC

SMD marking code 55B

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;

*C945P

Abstract: Philips TO-92 MARKING CODE W 2PA733P 2PC945P TRANSISTOR D 471 9340 350 20126 ST 9340 2PC945
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D186 2PC945 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 26 1999 May 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC945 FEATURES PINNING

transistor smd code marking tm

Abstract: SMD transistor MARKING CODE 213 PSMN130-200D PSMN130
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN130-200D N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES SYMBOL PSMN130-200D QUICK REFERENCE DATA • ’Trench’ technology

PSMN035-150P

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN035-150B; PSMN035-150P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN035-150B; PSMN035-150P SYMBOL QUICK REFERENCE DATA

PSMN015-100P,127

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN015-100B; PSMN015-100P SYMBOL QUICK REFERENCE DATA

SMD Marking 4570

Abstract: PSMN070-200P PSMN070-200B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN070-200B; PSMN070-200P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN070-200B; PSMN070-200P SYMBOL QUICK REFERENCE DATA

CMPT918

Contextual Info: Central Central TMTM CMPT918 SemiconductorCorp. Corp. Semiconductor NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT918 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

NTE318

Contextual Info: NTE318 Silicon NPN Transistor RF Power Output Description: The NTE318 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes improved metallization systems to achieve extreme ruggedness under severe operating conditions.

NTE318

Abstract: NPN planar RF transistor RF POWER TRANSISTOR NPN
Contextual Info: NTE318 Silicon NPN Transistor RF Power Output Description: The NTE318 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes improved metallization systems to achieve extreme ruggedness under severe operating conditions.

Contextual Info: 2SD2480 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2480 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

IC 630

Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •

2SD2480

Abstract: D2480
Contextual Info: 2SD2480 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2480 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

2SD2480

Abstract: D2480
Contextual Info: 2SD2480 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2480 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)