TRANSISTOR 287 A Search Results

Contextual Info: Stanford Microdevices gë3 Product Description SLN-287 Stanford M icrodevices’ SLN-287 is a high performance gallium arsenide heterojunction bipolar transistor M MIC housed in a low-cost plastic drop-in package. A Darlington configuration is used for broadband performance from DC-3.5 GHz.

Contextual Info: L9958 Low RDSON SPI controlled H-Bridge Datasheet − production data Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Programmable current regulation peak threshold by SPI up to 8.6 A typ. Operating battery supply voltage 4.0 V to 28 V

TLE84110

Abstract: TLE84110EL 0603 footprint IPC hint HB1 hSD10 84110EL PG-SSOP-24-4
Contextual Info: Data Sheet, Rev. 1.0, April 2010 TLE84110EL Deca-Half-Bridge Driver IC Automotive Power TLE84110EL Deci Half Bridge IC Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

BH00

Abstract: GRM21BR61C VLF40
Contextual Info: SC4503 1.3MHz Step-Up Switching Regulator with 1.4A Switch POWER MANAGEMENT Description Features The SC4503 is a 1.3MHz current-mode step-up switching regulator with an integrated 1.4A power transistor. Its high switching frequency allows the use of tiny surface-mount external passive components. The SC4503

transistor 1211

Abstract: transistor su 312 transistor zo 109
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

Contextual Info: L6206Q DMOS dual full bridge driver Datasheet - production data • Undervoltage lockout  Integrated fast free wheeling diodes Application  Bipolar stepper motor 9 4)31  [  PP  Dual or quad DC motor Features Description  Operating supply voltage from 8 to 52 V

Contextual Info: L6206Q DMOS dual full bridge driver Datasheet - production data • Undervoltage lockout  Integrated fast free wheeling diodes Application 9 4)31  [  PP  Bipolar stepper motor  Dual or quad DC motor Features Description  Operating supply voltage from 8 to 52 V

Contextual Info: L99DZ80EP Door actuator driver Features • One full bridge for 6 A load RON = 150 mΩ ■ Two half bridges for 3 A load (RON = 300 mΩ) ■ Two half bridges for 0.5 A load (RON = 1600 mΩ) *$3*&)7 TQFP-64 ■ One high-side driver for 5 A load (RON = 100 mΩ)

2SC5005

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

J231 transistor

Abstract: j392 diode germanium tu 38 f SGA-9289 130C SiGe POWER TRANSISTOR transistor RF S-parameters transistor J9 SGA9289Z
Contextual Info: Preliminary SGA-9289 SGA-9289Z Product Description Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=27.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor SiGe

Contextual Info: L6207Q DMOS dual full bridge driver Datasheet - production data Description The L6207Q device is a DMOS dual full bridge driver designed for motor control applications, realized in BCDmultipower technology, which combines isolated DMOS power transistors with

Contextual Info: Central“ CXTA27 Semiconductor Corp. NPN DARLINGTON TRANSISTOR DESCRIPTION: % The CENTRAL SEM ICONDUCTO R CXTA27 type is a NPN Silicon Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high

Contextual Info: DTA144TT1 Preferred Device Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

SGA9289Z

Abstract: MARKING P2Z SGA-9289z SGA9289ZSR rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9
Contextual Info: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This

marking code 8T

Contextual Info: DTC144TT1 Preferred Device Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

BUZ24

Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53cl31 OOmSTfl 1 ■ - BUZ24 r-3 i-is July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

SP8735B

Abstract: SP8630B SP8690A
Contextual Info: Product index Logarithmic/Limiting Amplifier Type No. Description SL3522 Monolithic 6 stage amplifier successive detection Bandwidth Dynamic Range Page 600MHz 70dB 83 Logarithmic Amplifiers Supply Voltage Supply Current Bandwidth Noise Figure Gain Page Successive detection

solid state relay

Contextual Info: Solid State Relays Industrial, 1-Phase DCS Types RD 0605 -D, RD 2001 -D, RD 3501 -D • • • • • DC Solid State Relay Rated operational current: 1 and 5 ADC Operational voltage range: Up to 350 VDC Input range: 3 to 32 VDC Insulation: OPTO input-output 4000 VACrms

L6902

Abstract: L6902D L6902D013TR
Contextual Info: L6902 Up to 1 A switching regulator with adjustable current limit Features • Up to 1 A output current ■ Operating input voltage from 8 V to 36 V ■ Precise 3.3 V ±2% reference voltage ■ 5 % output current accuracy ■ Output voltage adjustable from 1.235 V to 34 V

tda4863AJ equivalent

Abstract: tda4863 equivalent TDA4863AJ TDA4863aj diagram TDA4863A tda4863aj vertical IC TDA4863J, TDA4863AJ AN00038 TDA4863 application note AN99009
Contextual Info: APPLICATION NOTE Vertical power booster TDA4863AJ/TDA4863J AN00040 3KLOLSV 6HPLFRQGXFWRUV 73: 3KLOLSV 6HPLFRQGXFWRUV Vertical power booster TDA4863AJ/TDA4863J Application Note AN00040 Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

WJ-CA61

Contextual Info: WJ-A61 / SMA61 2 to 6 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 2-6 GHz MEDIUM OUTPUT LEVEL: +12.5 dBm TYP. LOW NOISE: 3.2 dB (TYP.) Outline Drawings A61 Specifications* 0.200 (5.03) Characteristics Guaranteed

Contextual Info: GFB0220A GFB0220A GFB0220A 16-BIT CARRY-SELECT ADDER GENERAL D E S C R I P T I O N : THE GFB0220A USES A FAST CARRY-SELECT ALGORITHM TO PERFORM AN ADDITION OF TWO 16-BIT NUMBERS. PIN DIAGRAM: GFB0220A •GATES USED » 287 -AREA USED - 376 GATE LOCATIONS •PROPAGATION DELAY « 28 NS

Contextual Info: Central Sem iconductor Corp. C Z T2907A PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CZT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose amplifier and

VFQFPN-48

Contextual Info: L6208Q DMOS driver for bipolar stepper motor Datasheet - production data Description 9 4)31  [  PP Features • Operating supply voltage from 8 to 52 V  5.6 A output peak current  RDS on) 0.3  typ. value at Tj = 25 °C The L6208Q device is a DMOS fully integrated