TRANSISTOR 20A Search Results

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

60V transistor npn 2a

Contextual Info: PZT158 NPN Transistor Elektronische Bauelemente Silicon Planar High Current Transistor RoHS Compliant Product SOT-223 Description The PZT158 is designed for general purpose switching and amplifier applications. Features * 6Amps Continous Current, Up To 20Amps Peak Current

QCA30B60

Abstract: QCA30A60 qca30a QCA30B40 QCB30A40 QCB30A60 c2e1
Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max

NPN Transistor 1500V

Abstract: transistor tl 187 187 npn transistor NPN Transistor 1500V 20a NTE238
Contextual Info: NTE238 Silicon NPN Transistor Color TV, Horizontal Output Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: D VCEX = 1500V D Safe Operating Area @ 50µs = 20A, 400V

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)

QCA100A60

Abstract: transistor 100A QBB100A40 QBB100A60 QCA100A40 IC-100A 6A620
Contextual Info: TRANSISTOR MODULE QCA100A/QBB100A40/60 UL;E76102 M QCA100A and QBB100A is a dual Darlington power transistor modules with two high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. QCA100A Series-connected type

Contextual Info: TO -2 20A B BUJ303A NPN power transistor Rev. 6 — 8 February 2012 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT78 TO-220AB plastic package. 1.2 Features and benefits

vqe 24 d

Abstract: vqe 24 e VQE 23 E vqe 23 vqe 14 E VQE 21 d vqe 23 f vqe 23 c IGT6D20 IGT6E20
Contextual Info: IGT6D20,E20 20 AMPERES 400,500 VOLTS EQUIV. Rd S ON = 0.12 0 Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

QF20AA60

Abstract: DIODE BZ QF20AA40
Contextual Info: TRANSISTOR MODULE（THREE PHASES BRIDGE TYPE） QF20AA40/60 QF20AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

IGT8D21

Abstract: IGT8E21
Contextual Info: csrifBAiMiiisro^ IGT8D21.E21 2CI AMPERES 400, 500 VOLTS EQUIV. FiDS ON = 0.145 i l Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

qf30aa60

Abstract: QF30AA40 IC 7403
Contextual Info: TRANSISTOR MODULE（THREE PHASES BRIDGE TYPE） QF30AA40/60 QF30AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

IGT6D21

Abstract: IGT6E21
Contextual Info: IGT6D21.E21 Insulated Gate Bipolar Transistor This IG T " Transistor Insulated Gate Bipolar Transistor is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high

IC-100A

Abstract: QCA100BA60 hFE-750
Contextual Info: TRANSISTOR MODULE（Hi-β） QCA100BA60 UL;E76102 （M） QCA100BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is

SQD65BB75

Abstract: sqd65B
Contextual Info: TRANSISTOR M O D U L E non -ISOLATED TYPE SQP65BB75 S Q D 6 5B B is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • VCbo= 750V, lc = 65A • Suitable for Resonance circuit applications.

Contextual Info: TRANSISTOR MODULE QCA100AA100 UL;E76102 M Q C A 1O O A A 10 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated

sqd35J

Contextual Info: TRANSISTOR M O D U LE < non -IS O L A T E D TYPE SQD35JA140/160 S Q D 3 5 J A is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • Vcbo= 1600V MAX, lc = 35A For AC200V Line)

Contextual Info: TRANSISTOR M O D U L E S - IS O L A T E D T Y P E SQD50ABKX) SQD50AB is a high speed, high power Darlington transistor designed for use in Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • Vcbo=I000V, 5 2 ± 0 .3 6mir>. 6min,

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

Contextual Info: • TRANSISTOR MODULE 7 ^ 1 5 4 3 000S1A5 H13 QCA100A/QBB100A40/60 UL;E76102 M Q C A 1 0 0 A and Q B B 1 OOA is a dual Darlin­ gton power transistor module with two high speed, high power Darlington transis­ tors. Each transistor has a reverse paral­ leled fast recovery diode.

PSMN130-200D

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN130-200D N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES SYMBOL PSMN130-200D QUICK REFERENCE DATA • ’Trench’ technology

70V AC to 48v dc 40 amp converter circuit diagram

Contextual Info: LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller FEATURES DESCRIPTIO U The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode

GHM3045

Abstract: FZT690 ltc 3781 SI4450 optocoupler Iso1 BAS21 BAT54 LT3781 MMBD914LT1 MURS120T3
Contextual Info: LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller U FEATURES DESCRIPTIO The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode

NPN Transistor VCEO 1000V

Abstract: 1000v, NPN NTE2310 transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A
Contextual Info: NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings:

2SJ599

Abstract: 2SJ599-Z
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ599 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES PART NUMBER