TRANSISTOR 200 WATT 28 V 0-30 MHZ Search Results

TRANSISTOR 200 WATT 28 V 0-30 MHZ Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR 200 WATT 28 V 0-30 MHZ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
jmc 5201 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPH Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts	OCR Scan	MRF321 jmc 5201	PDF
vk200 coil Abstract: FERROXCUBE VK200 jmc 5201 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 1 0 Watts	OCR Scan	MRF321 vk200 coil FERROXCUBE VK200 jmc 5201	PDF
transistor MRF321 Abstract: JMC5201 redcap erie redcap capacitors vk200 coil erie redcap vk200 1N4001 MRF321 case 244-04 Contextual Info: Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc	Original	MRF321/D MRF321 transistor MRF321 JMC5201 redcap erie redcap capacitors vk200 coil erie redcap vk200 1N4001 MRF321 case 244-04	PDF
D73 transistor Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc	OCR Scan	MRF321 MRF321 b3b72S5 D73 transistor	PDF
MRF321 Abstract: ferroxcube 56-590-65 Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range.	Original	MRF321 400MHz 1N4001 56-590-65/4B) VK200-19/4B MRF321 ferroxcube 56-590-65	PDF
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Abstract: RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ BD136 BD135 MJD47 MRF20060 MRF20060S RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x Contextual Info: MOTOROLA Order this document by MRF20060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high	Original	MRF20060/D MRF20060 MRF20060S MRF20060 MRF20060S RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ BD136 BD135 MJD47 RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x	PDF
SLD-2083CZ Abstract: 915 MHz RFID SLD2083CZ GaN Bias 25 watt j20 Schematic InP transistor HEMT transistor BJT Driver smd transistor ne c2 Contextual Info: SLD-2083CZ SLD-2083CZ 12 Watt Discrete LDMOS FET in Ceramic Package 12 WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE NOT FOR NEW DESIGNS Package: RF083 Product Description Features 12 Watt Output P1dB Single Polarity Supply Voltage High Gain: 18 dB at 915 MHz	Original	SLD-2083CZ RF083 SLD-2083CZ SLD2083CZ 600S120FT250XT 600S6R8BT250XT 0603CS-16NXJB 0603CS-1N6XJB 0603CS-4N7XJB 915 MHz RFID GaN Bias 25 watt j20 Schematic InP transistor HEMT transistor BJT Driver smd transistor ne c2	PDF
MRF321 Abstract: 3 w RF POWER TRANSISTOR NPN erie redcap capacitors 1N4001 VK200 transistor MRF321 Contextual Info: MOTOROLA Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc	Original	MRF321/D MRF321 MRF321/D* MRF321 3 w RF POWER TRANSISTOR NPN erie redcap capacitors 1N4001 VK200 transistor MRF321	PDF
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Abstract: MOTOROLA TRANSISTOR 935 BD136 bd136 transistor 10J capacitor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ transistor NPN 30 watt BD135 MJD47 MRF20030 Contextual Info: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this	Original	MRF20030/D MRF20030 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ MOTOROLA TRANSISTOR 935 BD136 bd136 transistor 10J capacitor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ transistor NPN 30 watt BD135 MJD47 MRF20030	PDF
rohm mtbf Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this	OCR Scan	1S211 1S22I MRF20030 rohm mtbf kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861	PDF
transistor MRF321 Abstract: JMC 1200 Contextual Info: MOTOROLA Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts	Original	MRF321/D MRF321 MRF321 MRF321/D* MRF321/D transistor MRF321 JMC 1200	PDF
1417-2 Abstract: Load VSWR tolerance CAV 444 1417 ic Contextual Info: 1417-2 2 Watt "28 Volts’ Class c CHz TECHNOLOGY »FMicKowAVE silicon powe > T»*N5HTo«i M ic ro w a v e 1 4 0 0 - 1 7 0 0 GENERAL DESCRIPTION M H z CASE OUTLINE The 1417-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF output power over the band 1400-1700 MHz. This transistor is	OCR Scan	RD11110 000QD34 1417-2 Load VSWR tolerance CAV 444 1417 ic	PDF
DBT134 Contextual Info: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this	OCR Scan	MRF20030R/D DBT134	PDF
ATC100B Abstract: MAPLST2122-090CF transistor f1 Contextual Info: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 90W, 28V 4/6/2005 MAPLST2122-090CF Preliminary Package Style Features Q Q Q Q Q Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, W-CDMA and multicarrier power	Original	MAPLST2122-090CF 28VDC, -45dB 096MHz) 2110MHz) ATC100B MAPLST2122-090CF transistor f1	PDF

MRF327 Abstract: 80WF Contextual Info: MRF327 o I NPN SILICON RF POWER TRANSISTOR . designed primarily stages in the 100-500 o Guaranteed Performance Output Built-in wideband @ 400 MHz, Match with 30:1 Network Metal lization for System for 100–500 Collector-Emitter Voltag~J~I.? Emitter-Base	Original	MRF327 AR120NA MRF327 80WF	PDF
MRF327 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF327 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band	OCR Scan	80-mil-Thick MRF327	PDF
PH0810-35 Abstract: Transistor c54 F1 J37 transistor 431 N cl 740 Contextual Info: = an AMP - company Wireless Bipolar Power Transistor, 850 - 960 MHz 35W PH081 o-35 Features Designed for Linear Amplifier Applications Class AB: -3OdBc Typ 3rd IMD at 15 Watts PEP Class A: +53dBm Typ 3rd Order Intercept Point Common Emitter Configuration	Original	PH081 53dBm PH0810-35 lN4245 PH0810-35 Transistor c54 F1 J37 transistor 431 N cl 740	PDF
F1 J37 Abstract: b 595 transistor PH1516-60 PHI516160 wacom PHI516 Contextual Info: * z-,-3 y-z =: .-= z =z = an AMP company Wireless Bipolar Power Transistor, 1450 - 1550 MHz 60W PHI516160 Features Designed for Linear Amplifier Applications Class AB: -30 dBc Typ 3rd IMD at 60 Watts PEP Class A: +53 dBm Typ 3rd Order Intercept Point	Original	PHI516160 F1 J37 b 595 transistor PH1516-60 PHI516160 wacom PHI516	PDF
vk200 coil Abstract: jmc 5201 ferroxcube 56-590-65 VK200-19 FERROXCUBE VK200 Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF P o w er T ran sisto r . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. 10 W, 400 MHz RF POWER TRANSISTOR NPN SILICON	OCR Scan	MRF321 vk200 coil jmc 5201 ferroxcube 56-590-65 VK200-19 FERROXCUBE VK200	PDF
MRF327 Abstract: Johanson Piston Trimmer Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF327 . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band	OCR Scan	MRF327 80-mil-Thick MRF327 Johanson Piston Trimmer	PDF
COUGAR LOW NOISE AMPLIFIER Contextual Info: High Efficiency, Class A, 1 Watt Amplifier 10 to 500 MHz Technical Data CTO-565 Features Description Pin Configuration • 1 Watt Output Power The CTO-565 is a high gain, high efficiency , Class A 1 Watt amplifier designed to provide broadband power for a wide variety of	Original	CTO-565 CTO-565 COUGAR LOW NOISE AMPLIFIER	PDF
Johanson Piston Trimmer Abstract: J154 J329 J253 vk200 erie redcap capacitors MRF327 NPN RF Amplifier Contextual Info: Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc	Original	MRF327/D MRF327 Johanson Piston Trimmer J154 J329 J253 vk200 erie redcap capacitors MRF327 NPN RF Amplifier	PDF
ericsson 20077 Abstract: InMarSat power Contextual Info: e PTB 20077 0.7 Watts, 1525–1660 MHz INMARSAT RF Power Transistor Description The 20077 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 0.7 watt minimum output power, it may be used for both CW and PEP	Original	1-877-GOLDMOS 1301-PTB ericsson 20077 InMarSat power	PDF
capacitor 50uf Abstract: balun 50 ohm DU28200M transistor c s z 44 v Contextual Info: m an A M P com pany RF MOSFET Power Transistor, 200W, 28V 2 - 1 7 5 MHz DU28200M V2.00 Features • • • • • - A - N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices	OCR Scan	DU28200M 13PARTS 500pF 2700OHM DU28200M 1000pF capacitor 50uf balun 50 ohm transistor c s z 44 v	PDF

TRANSISTOR 200 WATT 28 V 0-30 MHZ Search Results

TRANSISTOR 200 WATT 28 V 0-30 MHZ Result Highlights (5)

TRANSISTOR 200 WATT 28 V 0-30 MHZ Datasheets Context Search

jmc 5201

vk200 coil

transistor MRF321

D73 transistor

MRF321

RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

SLD-2083CZ

MRF321

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

rohm mtbf

transistor MRF321

1417-2

DBT134

ATC100B

MRF327

MRF327

PH0810-35

F1 J37

vk200 coil

MRF327

COUGAR LOW NOISE AMPLIFIER

Johanson Piston Trimmer

ericsson 20077

capacitor 50uf