TRANSISTOR 200 V Search Results

diode dual d92

Abstract: KD621220
Contextual Info: m /HBSX KD621220 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 DUdl DsrHnQtOn Transistor Module 200 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

SMD 0508

Abstract: BLA1011-200 BLA1011S-200 250 B 340 smd Transistor sym039 SMD0508 NV SMD TRANSISTOR
Contextual Info: BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 — 26 October 2005 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1:

KD621K20

Contextual Info: m ß /B S K KD621K20 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 200 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

ATC800B

Abstract: BLF7G20LS-200 BLF7G20
Contextual Info: BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 2 — 27 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance

BLF7G22LS-200

Abstract: BLF7G22L BLF7G
Contextual Info: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 01 — 19 April 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance

Contextual Info: FF 200 R 06 KL 2 Transistor Transistor Thermische Eigenschaften RfhJC Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values RthCK V ces 600 V Ic 200 A Thermal properties DC, pro Baustein / per module DC, pro Baustein / per module

kd424520

Abstract: d79 motor i3003 a 103 m Transistor
Contextual Info: m /v a x x KD424520 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 200 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

BLC6G10-200

Abstract: BLC6G10LS-200
Contextual Info: BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor Rev. 01 — 19 April 2006 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance

BLA1011-200

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2000 Aug 02 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain

BLA1011-200

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2001 Feb 27 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain

MRF1001A

Abstract: high frequency transistor
Contextual Info: MRF1001A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI MRF1001A is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 200 mA VCE 20 V PDISS 1.0 W @ TC = 25 °C TJ -65 °C to +200 °C

L-Band 1200-1400 MHz

Abstract: diode gp 429 Radar x band radar HV400
Contextual Info: DESCRIPTION DESCRIPTION HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% DutyDuty 1200-1400 MHz, 200µs Pulse, 10% The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor

KS621K20

Abstract: ipm darlington transistor s43 DIODE S44 powerex ks62 transistor b 1417
Contextual Info: m w m oc KS621K20 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S M g lG D â tH n g tO fl Transistor Module 200 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power

transistor s46

Abstract: KS621220A7 s45 diode DIODE S45 powerex ks62
Contextual Info: m/mac KS621220A7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S lt lQ lG D S r H t lC jt O n Transistor Module 200 Amperes/1200 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT2227 Multi-Chip TRANSISTOR NPN/PNP FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current 200/-200 mA ICM: Collector-base voltage 75/-60 V V(BR)CBO:

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847PN Muti-Chip General Purpose TRANSISTOR SOT-363 PNP and NPN FEATURES Power dissipation PCM : 200 mW (Tamb=25℃) Collector current ICM: 200/-200 mA Collector-base voltage

transistor marking DG

Abstract: TRANSISTOR SMD MARKING CODE pa marking code DG SMD Transistor dg transistor smd NXP SMD TRANSISTOR MARKING CODE SMD transistor code 132 transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD CODE PACKAGE SOT363 marking code BV SMD Transistor
Contextual Info: PUML1/DG 50 V, 200 mA NPN general-purpose transistor/ 100 mA NPN resistor-equipped transistor Rev. 01 — 14 July 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor and NPN Resistor-Equipped Transistor RET in one

1416-200

Contextual Info: 1416 - 200 200 Watts - 50 Volts, Pulsed Radar 1400 - 1600 MHz GENERAL DESCRIPTION The 1416-200 is an internally matched, COMMON BASE transistor capable of providing 200 Watts of pulsed RF output power at one microsecond pulse width, ten percent duty factor across the band 1400-1600 MHz. This

Contextual Info: General Transistor Corporation SMALL SIG N A L TRANSISTORS • ■ ■ NPN TRANSISTORS FOR RF APPLICATIONS VCEO V M/OtNUH RATINI3S le (mA) Ptol (mW) 2N91B 2N2857 2N3600 2N3839 15 15 15 15 50 40 50 40 200 200 200 200 2N5031 2N5032 2N5179 2N5842 10 10 12 10

RO4350 properties

Abstract: RO4350 BLF7G15L-200 800B 15085
Contextual Info: BLF7G15LS-200 Power LDMOS transistor Rev. 1 — 13 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

transistor s 1014

Abstract: L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200
Contextual Info: HVV1214-025 HVV1214-025 L-BandRadar RadarPulsed PulsedPower PowerTransistor Transistor L-Band HVV1214-075 1200-1400 MHz,200!s 200!sPulse, Pulse,10% 10%Duty Duty HVV1214-025 The innovative Semiconductor Company! 1200-1400 MHz, L-Band Radar Pulsed Power Transistor

Contextual Info: KST42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 300 200 V V VEBO IC PC T STG 300 200 6 500 350 150 V V V mA mW °C RTH(j-a) 357 °C/W VCBO Collector Base Voltage

diode D83

Abstract: 50m01 U300 KD424520HB d82 diode darlington 40A
Contextual Info: fOMEREX KD424520HB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H i C f h mB O t B Dual Darlington Transistor Module 200 Amperes/600 Volts O U T L I N E DR A WI N G Description: The Powerex High-Beta Dual Darlington Transistor Modules are

MJL3281A MJL1302A

Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors
Contextual Info: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors