TRANSISTOR 200 V Search Results

Contextual Info: KD424520 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15B97-1800 412 925-7272 DUdl DSfHnQtOfl Transistor Module 200 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

diode dual d92

Abstract: KD621220
Contextual Info: m /HBSX KD621220 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 DUdl DsrHnQtOn Transistor Module 200 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

Contextual Info: m M EREX KD621220 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 200 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

SMD 0508

Abstract: BLA1011-200 BLA1011S-200 250 B 340 smd Transistor sym039 SMD0508 NV SMD TRANSISTOR
Contextual Info: BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 — 26 October 2005 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1:

Contextual Info: BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 — 26 October 2005 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1:

KD621K20

Contextual Info: m ß /B S K KD621K20 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 200 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

F 300 R 1200 KF

Abstract: FZ 76 1000
Contextual Info: FZ 200 R 12 KF Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module 0,088 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcES 1200 V 200 A 150

Contextual Info: K W E R E X KD621K20 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 200 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

F 300 R 1200 KF

Contextual Info: FZ 200 R 12 KF Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module 0,088 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcES 1200 V 200 A 150

CD3922

Contextual Info: CD3922 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD3922 is a UHF Communication Power Transistor for Broadband Class A, AB or C Applications. MAXIMUM RATINGS I 15 A V 40 V PDISS 200 W @ TC = 25 OC TJ -65 OC to +200 OC T STG -65 OC to +200 OC PACKAGE STYLE JO-2

ATC800B

Abstract: BLF7G20LS-200 BLF7G20L-200
Contextual Info: BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 3 — 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance

Contextual Info: BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance

Contextual Info: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance

BLF7G22LS-200

Abstract: BLF7G22L
Contextual Info: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 2 — 28 December 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance

ATC800B

Abstract: BLF7G20LS-200 BLF7G20
Contextual Info: BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 2 — 27 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance

BLF7G22LS-200

Abstract: BLF7G22L BLF7G
Contextual Info: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 01 — 19 April 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance

Contextual Info: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 3 — 1 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance

ATC800B

Contextual Info: BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance

ATC800B

Contextual Info: BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 01 — 3 June 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance

Contextual Info: FF 200 R 06 KL 2 Transistor Transistor Thermische Eigenschaften RfhJC Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values RthCK V ces 600 V Ic 200 A Thermal properties DC, pro Baustein / per module DC, pro Baustein / per module

1BW TRANSISTOR

Abstract: transistor BU 110 diode sg 69
Contextual Info: F 200 R10 K EUPEC SEE D 34G32T7 0000244 bl3 « U P E C Thermische Eigenschaften Thermal properties Rtwc DC, pro Baustein / per module 0,088 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1000 V 200 A RthCK

kd424520

Abstract: d79 motor i3003 a 103 m Transistor
Contextual Info: m /v a x x KD424520 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 200 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

Contextual Info: KD424520HB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H iQ h ~ B 6 tB Dual Darlington Transistor Module 200 Amperes/600 Volts Description: The Powerex High-Beta Dual Darlington Transistor Modules are high power devices designed for

BLC6G10-200

Abstract: BLC6G10LS-200
Contextual Info: BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor Rev. 01 — 19 April 2006 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance