TRANSISTOR 1P T Search Results

kst2222a

Contextual Info: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage

uj01

Abstract: M33 TRANSISTOR
Contextual Info: DATA SHEET AdLib OCR Evaluation NEC SILICON TRANSISTOR ElICTION DEVICE GN1A4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 2.1±0.1 1.25±0.1 LO 1P C~ -14 M 0 0+1 96 Ln 2 _+ C14 0 Resistors Built-in TYPE

MARKING 1P

Abstract: MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

UTC 225

Contextual Info: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE

CM603

Contextual Info: 6DI3OA-O5O 30a Ä ± / < 7 — Ì V ; Outline Drawings , < n - \ = 7 > V 'T s ^ i> z l - ; u POWER TRANSISTOR MODULE (10), H.& j I9.5~ . H .5 . 1|,& . (1p}| F e a tu re s • 7 '} — X ' f <J ' s '? $ 4 + — K r t/K • liF E ^ 'iS i.' • S6i&Jfi In c lu d in g 'F re e W h e e lin g D iode

transistor BR A 94

Abstract: bcw 25 transistor bcw 94 b transistor A 94 bcw 95 transistor transistor BCW 94 c bcw94b BCW95 BCW95B bcw94A
Contextual Info: BCW94 A.B.C BCW95A.B NPN SILICO N TRANSISTOR, EPIT A X IA L PLANAR T R A N S IS T O R N P N S IL IC IU M , P L A N A R E P IT A X IA L • LF Amplification Amplification B F CE0 I 40 V BCW 94 160 V BCW 95 ■c °<4 A h ,1P 100-200 (A <B) (C) (1 5 0 m A 7 w iS 1 5 0 ' 3 0 0

2SC741

Abstract: transistor 1p 1p TRANSISTOR ZM50 TG-25 1P H transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC741 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION O UTLINE DRAWING 2SC741 is a silicon NPN epitaxial planar type transistor designed fo r industrial use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm

2SC1970

Abstract: 2sc1970 transistor T-30 parameters S transistor NPN
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1970 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1970 is a silicon NPN epitaxial planar typ e transistor designed Dimensions in mm fo r RF power am plifiers on V H F band m obile radio applications. 9.1 ± 0 .7

LMBT2222ATT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications.

2SC730

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm

TRANSISTOR 1P

Abstract: Transistor MARKING 1P 1p TRANSISTOR marking 1p transistor transistor 1P F marking transistor 1p 1 TK2222ATTD03
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors MMBT2222AE C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (MMBT2907AE)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03)

SI-7501

Abstract: TMC249 7805 voltage regulator working principle 7805 5V REGULATOR IC THREE TERMINAL IR2101 full bridge MARKING CODE 9952 TMC249A-SA Siliconix SI 5504 Fairchild 8333C 7805 TO252
Contextual Info: TMC249 / TMC249A DATA SHEET V2.09 / 2009-Jul-30 1 TMC249/A – DATASHEET High current microstep stepper motor driver with stallGuard , protection / diagnostics and SPI Interface TRINAMIC Motion Control GmbH & Co KG Sternstraße 67 D – 20357 Hamburg

SI-7501

Abstract: 7805 TO252 TMC239A transistor BD 140 working principle in 7805 so8 lm317 so8 MARKING CODE 9952 7805 voltage regulator working principle QFN32 TMC239
Contextual Info: TMC239 / TMC239A DATA SHEET V2.11 / 2009-Jul-30 1 TMC239/A – DATA SHEET High current microstep stepper motor driver with protection, diagnostics and SPI Interface TRINAMIC Motion Control GmbH & Co KG Sternstraße 67 D – 20357 Hamburg GERMANY www.trinamic.com

transistor k72

Contextual Info: NEW PRODUCT 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: M ITSUBISHI RF POW ER TRAN SISTO R 2SC3404 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE D RAW IN G D im ensions in mm 2 S C 3 4 0 4 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for V H F power amplifier applications. FEATU RES

transistor marking 1p Z

Abstract: MMBT2222AE MMBT2907AE transistor 1p
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors MMBT2222AE C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (MMBT2907AE)

2SC1969

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC1969 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 .7 FEATURES Dimensions i'

CNX48 U

Contextual Info: N AUER PHILIPS/DISCRETE 5SE D bbS3T31 QDa01fl3 1 CNX48 T - V - g f OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line D IL envelope. Features

Contextual Info: MMBT2222A 300mW, NPN Small Signal Transistor SOT-23 Small Signal Product Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin Sn lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant

MMDT2907A

Contextual Info: PRELIMINARY MMDT2907A DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 A C2 B1 E1 KXX B C Mechanical Data

marking K3N

Contextual Info: PRELIMINARY MMDT3906 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 A C2 B1 E1 KXX Mechanical Data