TRANSISTOR 1983 Search Results

high power FET transistor s-parameters

Abstract: high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET
Contextual Info: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .

high frequency transistor ga as fet

Abstract: ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter
Contextual Info: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

2N3904

Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

RTU620

Contextual Info: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta

Contextual Info: RN2401~RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2401, RN2402, RN2403 RN2404, RN2405, RN2406 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors

USE OF TRANSISTOR

Abstract: Marquardt Switches transistor model list
Contextual Info: Transistor Abstraction for the Functional Verification of FPGAs Guy Dupenloup, Thierry Lemeunier, Roland Mayr Altera Corporation 101 Innovation Drive San Jose, CA 95134 1-408-544-8672 {gdupenlo, tlemeuni, rmayr}@altera.com ABSTRACT This paper discusses the use of transistor abstraction to enable the

Contextual Info: 25E D N AMER PHI LI PS/ DIS CR ET E bb53T31 0020515 1 • BUK455-600A BUK455-600B PowerMOS transistor 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

3SK131

Abstract: 3SK131-T2-A V12 P12449EJ2V0DS00 TC1508
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS Unit: mm FEATURES • Suitable for use as RF amplifier in VHF TV tuner. +0.2 Gate1 to Source Voltage

3SK131

Abstract: P12449EJ2V0DS00
Contextual Info: DATA SHEET SHEET DATA MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS Unit: mm FEATURES • Suitable for use as RF amplifier in VHF TV tuner. +0.2 Gate1 to Source Voltage

PXTA14

Contextual Info: bbsa'm o o 2 s c]flti oTb « a p x N AMER PHILIPS/DISCRETE PXTA64 b7E D _ /v_ PNP SMALL-SIGNAL DARLINGTON TRANSISTOR PNP small-signal darlington transistor, housed in a microminiature envelope SOT-89 . It is intended primarily for use in preamplifier input applications requiring high input impedance.

BUK455

Abstract: BUK455-600B BUK455-600A BUK455 600b T0220AB BUK455 600
Contextual Info: N AMER P H I L I P S / D I S C R E T E 25E D • ^5 3 = 1 3 1 0 0 2D S1 5 1 ■ PowerMOS transistor BUK455-600A BUK455-600B r ^ 2 i-} 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK455-600B

Abstract: BUK455-600A BUK455 T0220AB
Contextual Info: N AMER PH I L I P S / D I S C R E T E 2 5 E ^53=131 D 0 0 S D 5 15 1 PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Helipot POTENTIOMETER

Abstract: 2N4947 transistor WL 431 Helipot 2N4949 2N4947 JAN 2N4948 JANTX TXAL118B.388B 2N4948 2n4948 jan
Contextual Info: The documentation and process conversion | measures necessary to comply with this | revision shall be completed by Q 9 - 3 0 - 92 J MIL-S-19500/388B 30 J u n e 1992 SUPERSEDING MIL-S-19500/388A 11 July 1983 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN, SILICON, UNIJUNCTION

BUW62

Abstract: NPN 400V 40A LE17 TSLA Scans-007954
Contextual Info: SEMELAB 8133167 ÜOOOSOS 3 H S M L B 37E D LTD SEMELAB JUL 0 6 1983 BUW 62 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitablefor applications requiring low saturation voltage and high gain for reduced load operation M E C H A N IC A L D A T A Dim ensions in mm

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

design dielectric resonator oscillator

Abstract: wide band rf reference designs DIELECTRIC COAXIAL RESONATOR varactor diode q factor measurement J048A
Contextual Info: A COMPARISON OF MICROSTRIP & COAXIAL RESONATOR VOLTAGE CONTROLLED OSCILLATOR DESIGN APPROACHES APPLICATIONS single transistor driven into oscillation with positive feedback and frequency changed with a varactor tuned resonant circuit. The resonant element for the

70572

Abstract: bipolar transistor tester SMP30N10 "Integrated Technology corporation" AN601 RPKC MOSPOWER Design Data Book 1983 uis test
Contextual Info: AN601 Vishay Siliconix Unclamped Inductive Switching Rugged MOSFETs For Rugged Environments The evolution of the power MOSFET has resulted in a very rugged transistor. The semiconductor industry defines this ruggedness as the capability to withstand avalanche currents

Contextual Info: RN1401～RN1406 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1401, RN1402, RN1403 RN1404, RN1405, RN1406 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplified circuit design

microwave transistor siemens bfp 420

Abstract: RF Transistors smd transistor chart smd transistor NJ transistor R 405 doppler radar SMX-1 AG SMD TRANSISTOR Siemens transistors rf SIEMENS MICROWAVE RADIO 8 GHz
Contextual Info: APPLICATIONS DISCRETE SEMICONDUCTORS Kurt Brenndörfer ● Gerhard Lohninger ● Lothar Musiol ● Jakob Huber Fourth-generation bipolar RF transistors with 25 GHz transit frequency: SIEGET heads the pack Since the very beginning of RF transistor development,

MOC8100

Contextual Info: MOC8100 LOW LED DRIVE WVOCOLN%ER WITH TRANSISTOR OUTPUT .,. gallium-arsenide IRED optically coupled to a silicon phototransistor designed for applications requiring low LED drive current, high electrical isolation, small package size and low cost such as interfacing