TRANSISTOR 1983 Search Results

high power FET transistor s-parameters

Abstract: high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET
Contextual Info: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .

2N3904

Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

RTU620

Contextual Info: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta

Contextual Info: RN2401~RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2401, RN2402, RN2403 RN2404, RN2405, RN2406 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors

USE OF TRANSISTOR

Abstract: Marquardt Switches transistor model list
Contextual Info: Transistor Abstraction for the Functional Verification of FPGAs Guy Dupenloup, Thierry Lemeunier, Roland Mayr Altera Corporation 101 Innovation Drive San Jose, CA 95134 1-408-544-8672 {gdupenlo, tlemeuni, rmayr}@altera.com ABSTRACT This paper discusses the use of transistor abstraction to enable the

Contextual Info: 25E D N AMER PHI LI PS/ DIS CR ET E bb53T31 0020515 1 • BUK455-600A BUK455-600B PowerMOS transistor 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

3SK131

Abstract: P12449EJ2V0DS00
Contextual Info: DATA SHEET SHEET DATA MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS Unit: mm FEATURES • Suitable for use as RF amplifier in VHF TV tuner. +0.2 Gate1 to Source Voltage

PXTA14

Contextual Info: bbsa'm o o 2 s c]flti oTb « a p x N AMER PHILIPS/DISCRETE PXTA64 b7E D _ /v_ PNP SMALL-SIGNAL DARLINGTON TRANSISTOR PNP small-signal darlington transistor, housed in a microminiature envelope SOT-89 . It is intended primarily for use in preamplifier input applications requiring high input impedance.

3SK131

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • S uita ble for use as RF a m p lifie r in V H F T V tun er. • Low • High • Low NF : 1.3 dB T Y P .

BUW62

Abstract: NPN 400V 40A LE17 TSLA Scans-007954
Contextual Info: SEMELAB 8133167 ÜOOOSOS 3 H S M L B 37E D LTD SEMELAB JUL 0 6 1983 BUW 62 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitablefor applications requiring low saturation voltage and high gain for reduced load operation M E C H A N IC A L D A T A Dim ensions in mm

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

design dielectric resonator oscillator

Abstract: wide band rf reference designs DIELECTRIC COAXIAL RESONATOR varactor diode q factor measurement J048A
Contextual Info: A COMPARISON OF MICROSTRIP & COAXIAL RESONATOR VOLTAGE CONTROLLED OSCILLATOR DESIGN APPROACHES APPLICATIONS single transistor driven into oscillation with positive feedback and frequency changed with a varactor tuned resonant circuit. The resonant element for the

Contextual Info: RN1401～RN1406 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1401, RN1402, RN1403 RN1404, RN1405, RN1406 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplified circuit design

SMP30N10

Abstract: MOSPOWER Design 1983 bipolar transistor tester MOSPOWER Design Data Book 1983 AN601 uis test siliconix FET DESIGN US ARMY TRANSISTOR CROSS SILICONIX avalanche mode transistor 5510E UIS tester
Contextual Info: AN601 Unclamped Inductive Switching Rugged MOSFETs for Rugged Environments Ed Oxner and Philip A. Dunning The evolution of the power MOSFET has resulted in a very rugged transistor. The semiconductor industry defines this ruggedness as the capability to withstand

2764 RAM

Abstract: INTEL 2764 EPROM Random Access Memory RAM EPROM 2764 intel 2764 EPROM
Contextual Info: IPfôiURMAIf inteT 2186A FAMILY 8 1 9 2 x 8 BIT INTEGRATED RAM • Low-cost, high volume HMOS III technology ■ Simple asynchronous refresh operation/ static RAM compatible ■ High density one transistor cell ■ 2764 EPROM compatible pin-out ■ Single + 5 V ± 10% supply

UA79M

Abstract: A79M UA79M08M
Contextual Info: TE XAS INSTR LIN/INTFC lflE » • OF D AT A F OR • 3-Terminal Regulators • Output Current Up to 500 mA ERRATA INFORMATION • No External Components • High Power Dissipation Capability • Internal Short-Circuit Current Limiting • Output Transistor Safe-Area Compensation

Contextual Info: in y 2187A FAMILY 8 1 9 2 x 8 BIT INTEGRATED RAM • Simple synchronous refresh operation Low-cost, high-volume HMOS technology ■ 2764 EPROM compatible pin-out High density one transistor cell ■ Two-line bus control Single + 5 V + 10% supply Proven HMOS Reliability

ALLEN BRADLEY

Abstract: 175150-1 Thais schematic SMPS 24V 50w E2713 RWR81 smps control ic with 6 pin sip SMPS SCHEMATIC DIAGRAM 36 Volt
Contextual Info: HIP5061 Semiconductor 7A, High Efficiency Current Mode Controlled PWM Regulator Features Description • Single Chip Current Mode Control IC The HIP5061 is a complete power control IC, incorporating both the high power DMOS transistor, CMOS logic and low level analog circuitry on the same Intelligent Power IC. The

LM63

Abstract: 2N3904 LM63CIMA LM63CIMAX LM63DIMA LM63DIMAX LM63EVAL transistor c900 TLHB11
Contextual Info: LM63 ± 1˚C/ ± 3˚C Accurate Remote Diode Digital Temperature Sensor with Integrated Fan Control General Description The LM63 is a remote diode temperature sensor with integrated fan control. The LM63 accurately measures: 1 its own temperature and (2) the temperature of a diodeconnected transistor, such as a 2N3904, or a thermal diode

8115, transistor

Abstract: 7011 NPN TRANSISTOR 2SC3209 NPN Transistor SE5010 2SC3209 T108 8115 TRANSISTOR 26236 2083m
Contextual Info: NEC A l i f / v Silicon T ra n sisto r A t z 2SC3209 NPN NPN Silicon Triple Diffused Transistor Chroma Output Use of Color TV or Driver of Horizontal Deflection W-MEE]/ PACKAGE DIMENSIONS ^ /F E A T U R E S U n i t : mm o ifij¡itB E "C o Vcbo —300 V,

2SC1961

Abstract: transistor c 301b japanese transistor manual 1981 2SA771 138D 2SA770 Transistor Manual 1981
Contextual Info: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

8U406

Abstract: BC317 Philips philips e3 407F flyback transformer philips BU406F BU407F Q030 407F Transistors
Contextual Info: PHILIPS INT ERNATIONAL MSE D E3 7 3tlüö2fci OOaüôB'ï ö S P H I N BU406F BU407F T - 3 ß - 0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 186 envelope w ith electrically isolated mounting base, intended for use in converters, inverters, switching regulators

digital proportional remote

Abstract: digital tachometer tachometer adc AN-1187 LM64 LM64CILQ-F LM64CILQX-F LM64EVAL LM86 MMBT3904
Contextual Info: LM64 ± 1˚C Remote Diode Temperature Sensor with PWM Fan Control and 5 GPIO’s General Description Key Specifications The LM64 is a remote diode temperature sensor with PWM fan control. The LM64 accurately measures its own temperature and that of a remote diode. The LM64 remote temperature accuracy is factory trimmed for a MMBT3904 diodeconnected transistor with a 16˚C offset for high

ku 606

Abstract: KT808AM transistor d 808 transistor kt transistor 805A 2110-B1 KT 805 RFT Transistoren KT808 2107B-2
Contextual Info: SERVICE-M ITTEILUNGEN VEB IN D U S T R IE V E R T R IE 8 R U N D F U N K U N D F E R N S EH EN ra d io -television AUSGABE: SEITE 1-4 DATUM: 3.84 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / SI E I H B A U A N L E I T Ü H G für den äquivalenten ?DE-Steckbaustein mit Transistor, der die Rohre 6 Sch 5 P in den Sü-Paxbfernseh^eraten RADUGA 726/730 ersetzt«