TRANSISTOR 182 Search Results

ARC-182

Abstract: transistor Common emitter configuration transistor t 04 27 PHOI an/ARC-182
Contextual Info: an AMP company CW Power Transistor, 30 - 400 MHz 16W PHOI 04-I 6 Features NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation 16 Watt PEP Output Diffused Emitter Ballasting Resistors Gold Metallization System Prqqn in Thousands of ARC-182 Airborne Radios

IC SEM 2105

Abstract: 3771 nec
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

2SC5006

Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

OUT40

Contextual Info: 0 182998 .AGRIAN. INC T? infini02e]TA 0001433 a i l kCRIAN G EN ER A L 2304 D E S C R IP TIO N 4.0 WATTS - 20 VOLTS 2300 MHz The 2304 is a common base transistor capable of providing 4 watts of CW RF output power at 2300 MHz. This hermetically sealed transistor is specifically designed

transistor NEC B 617

Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and

BFG591,115

Abstract: BFG591 Application Notes
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 04 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION • High power gain

Contextual Info: m 2N6044 \ \ SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6044 Darlington Transistor is Designed for General Purpose Medium Power Amplifier and Switching Applications. PACKAGE STYLE TO-220AB DIMENSIONS mm MAXIMUM RATINGS 120 mA Ib 0JC 10 15.2

tyco igbt

Abstract: function of igbt nf016 V23990-P430-F-01-14 V23990-P430-F-PM D8552 tyco igbt 1200V flowPACK V23990-P430-F
Contextual Info: V23990-P430-F-PM final datasheet V23990-P430-F-01-14 flowPACK 1, 1200V 50A Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current

HLB122I

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2002.05.08 Page No. : 1/4 HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching

HLB122D

Abstract: TP 1322 Transistor C G 774 6-1 transistor k 2837
Contextual Info: HI-SINCERITY Spec. No. : HD200206 Issued Date : 2002.05.01 Revised Date : 2005.08.16 Page No. : 1/4 MICROELECTRONICS CORP. HLB122D NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122D is a medium power transistor designed for use in switching

2N1893

Abstract: 2N1893J 2N1893JV 2N1893JX
Contextual Info: 2N1893 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N1893J • JANTX level (2N1893JX)

2N720A

Contextual Info: 2N720A Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N720AJ • JANTX level (2N720AJX)

TRANSISTOR J477

Abstract: TRANSISTOR J477 48 AFT18HW355S C5750Y5V1H226Z
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 1, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

SC6210

Abstract: Sc-6210 PBSS4350X PBSS5350X PBSS5350
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Nov 21 2004 Nov 04 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor

transistor Bc 540

Abstract: tfk 540 TFK 212 TRANSISTOR BC 212 bc 212 BC212 BC 540 TRANSISTOR
Contextual Info: SHi2:ium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and driver stages Besondere Merkmale: Features: • • • • Verlustleistung 300 mW • In G ruppen so rtie rt

s43 npn transistor

Abstract: mle180 S43 sot89 PBSS4350x PBSS5350X transistor s43 SOT89 S43
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat BISS transistor Product specification 2003 Jun 24 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X FEATURES QUICK REFERENCE DATA

3563 1231

Abstract: transistor NEC B 617 nec d 1590
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain

Contextual Info: m 2N6678 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6678 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE T O - 3 INCHES 875 MAX. A MAXIMUM RATINGS B 135 MAX. .2 5 0- 043 DIA. C MILLIMETERS 22.23 MAX.

Contextual Info: m 2N6285 \ \ SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6285 is a PNP Monolithic Power Darlington Transistor Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO-3/TO-204AA U \ -J MAX. I MAXIMUM RATINGS 20 A 40 A PEAK

NDS 40-20

Abstract: BUK437-500B DIODE BB2
Contextual Info: PHILIPS INTERNATIONAL fc.5E D m 7110flSb □□t.3c121 RS3 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

ST T8 3580

Abstract: ST T8 3560 2SC5436 st zo 607 ce 2826 ic
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR ULTRA SU PER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package (1.4 mm x 0.8 mm x 0.59 mm: T Y P.)

Contextual Info: m 2N2920 \ \ SILICON NPN DUAL TRANSISTOR DESCRIPTION: The 2N2920 is a Dual Matched Transistor for General Purpose High Gain Low Noise Differential Amplifier Applications. PACKAGE STYLE TO-7 30 mA O m lc < MAXIMUM RATINGS 60 V P diss 500 mW @ TA = 25 °C

Contextual Info: m 2N2920A \ \ SILICON NPN DUAL TRANSISTOR DESCRIPTION: The 2N2920A is a Dual Matched Transistor for General Purpose High Gain Low Noise Differential Amplifier Applications. PACKAGE STYLE TO-78 MAXIMUM RATINGS lc 30 mA V ce 60 V P diss 500 mW @ TA = 25 °C

BF 182 transistor

Abstract: TRANSISTOR Bf 522 BF182 bf 182 CI 182 Y11E transistor A11A
Contextual Info: B F 182 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN SILIC IU M , PLA N A R E P IT A X IA L The NPN planar epitaxial transistor BF 182 is intended for use in V H F converter stages of television receivers and generally for'all U H FV H F uses.