TRANSISTOR 1758 Search Results

2SK1758

Abstract: MEI-1202 TEA-1035
Contextual Info: DATA SHEET NEC À MOS FIELD EFFECT POWER TRANSISTOR 2SK1758 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2S K 1758 is N -channel M O S Field Effect Transistor PACKAGE DIMENSIONS in millimeters designed fo r high voltage switching applications.

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

2SK1758

Abstract: K1758 MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2S K 1758 is N -channel M O S Field Effect Transistor

H9510

Abstract: GB100DA60UP
Contextual Info: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel didoes with ultrasoft reverse recovery

GB100DA60UP

Contextual Info: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery

VS-GB100DA60UP

Contextual Info: VS-GB100DA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft

GB100DA60UP

Contextual Info: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery

GB100DA60UP

Contextual Info: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery

E78996 diode

Abstract: GB100DA60UP
Contextual Info: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

GB100DA60UP

Abstract: GB100D 930-01
Contextual Info: GB100DA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel didoes with ultrasoft reverse recovery

Contextual Info: 6N1135/ 6N1136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated Features • • • • • • • • Isolation Test Voltage: 5300 VRMS Operating Temperature from -55 °C to +110 °C TTL Compatible

6N1135

Abstract: 6N1135-X007 6N1136 6N1136-X006 6N1136-X007 6N1136-X009 VDE0884
Contextual Info: 6N1135/ 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated Features • • • • • • • • • Operating Temperature from -55 °C to +110 °C Isolation Test Voltage: 5300 VRMS TTL Compatible

Contextual Info: 6N1135/ 6N1136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated Features • • • • • • • • Operating Temperature from -55 °C to +110 °C Isolation Test Voltage: 5300 VRMS TTL Compatible

DIN EN 17635

Contextual Info: 6N1135/ 6N1136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated Features • • • • • • • • Operating Temperature from -55 °C to +110 °C Isolation Test Voltage: 5300 VRMS TTL Compatible

Contextual Info: 6N1135/ 6N1136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated Features • • • • • • • • • Operating Temperature from -55 °C to +110 °C Isolation Test Voltage: 5300 VRMS TTL Compatible

Contextual Info: SIEMENS BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-type available: CECC 50002/248. BFS 17P MCs 1 =B Q62702-F940 II Pin Configuration CM Marking Ordering Code Package LU Type 3=C

SMD Transistor t 06

Contextual Info: 6N1135/6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES • Operating temperature from - 55 °C to + 110 °C • Isolation test voltages: 5300 VRMS • TTL compatible NC 1 8 C VCC • High bit rates: 1.0 MBd

Contextual Info: 6N1135/6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES • Operating temperature from - 55 °C to + 110 °C • Isolation test voltages: 5300 VRMS • TTL compatible NC 1 8 C VCC • High bit rates: 1.0 MBd

Contextual Info: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)

6N1135-X006

Abstract: TRANSISTOR SMD MARKING CODE t 04
Contextual Info: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)

Contextual Info: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)