TRANSISTOR 1345 Search Results

PBLS4003V

Abstract: PBLS4003Y
Contextual Info: PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch Rev. 02 — 14 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1:

PBLS4001V

Abstract: PBLS4001Y 13454
Contextual Info: PBLS4001Y; PBLS4001V 40 V PNP BISS loadswitch Rev. 01 — 8 November 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number Package

PBLS4004Y

Abstract: PBLS4004V sot363 marking K4
Contextual Info: PBLS4004Y; PBLS4004V 40 V PNP BISS loadswitch Rev. 01 — 13 December 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number Package

PBLS4002Y

Abstract: PBLS4002V
Contextual Info: PBLS4002Y; PBLS4002V 40 V PNP BISS loadswitch Rev. 02 — 19 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1:

PBLS4005V

Abstract: PBLS4005Y
Contextual Info: PBLS4005Y; PBLS4005V 40 V PNP BISS loadswitch Rev. 01 — 6 December 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number Package

Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 5 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1855 is a switching device which can be driven directly by a 2.5 V power source.

Contextual Info: N AMER PHILIPS/DISCRETE bbSB'lBl QQE'iBHB 17S • IAPX BLW50F b'JE D H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended fo r use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides

IR2422

Abstract: DARLINGTON TRANSISTOR ARRAY J5001 BVCEO-45V T-52-13-45 45VForward
Contextual Info: 1SE 0 | SHARP ELEK/ MELEC DIV 7-Unit 400mA Darlington Transistor Array 01007=10 0001=157 5 | T -5 2 -13-45 IR2422 7-Unit 400mA Darlington Transistor Array • Description Pin Connections The IR2422 is a 7-circuit driver. The internal clamping diodes enable the IC to drive the inductive

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

CA3246M

Abstract: transistor k 911
Contextual Info: CA3227, CA3246 Semiconductor September 1998 High-Frequency NPN Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz File Number 1345.4 Features • Gain-Bandwidth Product f j . >3GHz • Five Transistors on a Common Substrate

cm 45-12

Abstract: Mrf621 transistor 1346 420 NPN Silicon RF Transistor VK200 vk200 rf choke
Contextual Info: MRF621 SILICON T h e R F L in e 45 W - 470 M Hz "CONTROLLED Q" RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . .d es ig n e d fo r 1 2 .5 V o l t U H F large-signal a m p lifie r a p p lic a tio n s in industrial and c o m m e rc ia l

1117 S 3,3 Transistor

Abstract: Hall Sensor 4-lead S-Mini 1117 S Transistor transistor 1345
Contextual Info: CONTENTS PREFACE Related Document System List of Small Signal Transistors & Diodes Surface Mount Devices . 5 1. Using Device Selection Flowchart . 15 General Purpose Low Frequency Transistor SelectionMethod .

Semiconductor 1346 transistor

Contextual Info: ON Semiconductort MPSW92 One Watt High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −300 Vdc Collector −Base Voltage VCBO −300 Vdc Emitter −Base Voltage

transistor 1345

Abstract: CA3246E 4460E 1333E
Contextual Info: S CA3227, CA3246 High-Frequency NPN Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz August 1996 Features • Description Gain-Bandwidth Product fT . >3G Hz The CA3227 and CA3246 consist of five general purpose sil­

610E

Abstract: 800E CA3227 CA3227E CA3227M CA3227M96
Contextual Info: CA3227 TM Data Sheet High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the transistors exhibits a value of fT in excess of 3GHz, making

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

I348

Abstract: TMDB IRFM360 SS452 I-348
Contextual Info: Data Sheet No. PD-9.712A INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM36Q ;n N-CHANNEL 400 Volt, 0.20 Ohm HEXFET Product Summary T h e H E X F E T ® technology is the key to International Part N um ber

HT3014A

Abstract: HT3014B 11135 a 10905 cat sound 10905
Contextual Info: HT3014A/B 8 Key Voice Piano With 8 Demo Songs Features • • • • • Operating voltage: 2.4V~5.0V Directly driving an output transistor Low stand-by current 8 direct input keys tone area: C4~C5 • • 8 demo songs triggered by 8 independent keys 3Hz flashing LED output

I-348

Abstract: i348 TIR31 i346 IRFM360 IRFM360D IRFM360U I*348 9712A
Contextual Info: Data Sheet No. PD-9.712A INTERNATIONAL RECTIFIER i R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR ài IRFM360 N-CHANNEL 400 Volt, 0.20 Ohm HEXFET Product Summary T h e HEXFE T® technology is the key to International Part N um ber BV q s S

2SK1345

Contextual Info: TOSHIBA 2SK1345 Field Effect Transistor Silicon N Channel MOS Type L2-t>MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications F e a tu re s • 4-Volt Gate Drive • Low Drain-Source ON Resistance “ ^ D S ( O N ) = 0.042£2 (Typ.)

t056

Abstract: 2N2016 2N2016 JAN 2N2015 2n20 US ARMY TRANSISTOR
Contextual Info: MIL SPECS I C 0000125 0001340 E | INCH-POUND N OTICE OF VALIDATION M I L - S - 1 9 5 0 0 / 2 4 8 A (ER NOTICE 1 29 A u g u s t 1988 MI L I T A R Y S P E C I F I C A T I ON SHEET TRANSISTOR, NPN, SIL I C O N TYPES 2N2015, 2N2016 M i l i t a r y specification M I L - S - 1 9 5 0 0 / 2 4 8 A ( E R ) , d a t e d 10 A pril 1963,

PCF7931AS

Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
Contextual Info: Philips Semiconductors Product Discontinuations Notice DN44 December 31, 2000 SEE DN44 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

RG 56

Abstract: igbt 300V 10A datasheet
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 10 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 10 GD 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage