TRANSISTOR 1300 FREE Search Results

GRM55DR61H106KA88B

Contextual Info: Document Number: MHT1000H Rev. 0, 5/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MHT1000HR5 RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation.

Product Selector Guide

Abstract: NI-400S-2S
Contextual Info: RF Military Power LDMOS Transistors Freescale’s LDMOS technology is ideally suited for military applications such as battlefield communications, primary radar covering HF, VHF, UHF, L-Band, S-Band, and avionics such as IFF transponders , and electronic warfare jamming. The high

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs

MOSFET 1300 F2

Abstract: 465B AN1955 CDR33BX104AKWS MRF19125 MRF19125R3 3052 mosfet
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF19125R3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET

sot-23 MARKING 636

Contextual Info: S852T / S852TW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • • • SOT-23 Low supply voltage Low current consumption e3 50 Ω input impedance at 945 MHz Low noise figure High power gain Lead Pb -free component Component in accordance to RoHS 2002/95/EC

MOSFET 1300 F2

Abstract: 100B100JCA500X 465B CDR33BX104AKWS MRF19125 MRF19125R3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF19125 Rev. 8, 10/2008 RF Power Field Effect Transistor MRF19125R3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF19125 Rev. 7, 10/2008 RF Power Field Effect Transistor MRF19125SR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Contextual Info: Document Number: MRF19125 Rev. 8, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF19125R3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

232273461009L

Abstract: transistor mosfet J306 ATC100B2R0BT500X j327 transistor Transistor J182 232273461009 ATC100B470 ATC100B1R2BT500XT j349 AN1955
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9202N Rev. 0, 12/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9202NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library MRF21125 Wideband CDMA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs

IS621K30

Abstract: IS626040 ID2260A IEF260A2 powerex igbt ID126030 IS626030 ID121215
Contextual Info: POülEREX INC miN EREX 3=JE D • 7 2 ^ 5 1 GG04b34 S « P R X _ • IGBTMOD Selector Guide The Powerex IGBT modules are our newest product line. Powerex IGBTs are available in

S852T

Abstract: S852TW
Contextual Info: S852T / S852TW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • • • SOT-23 Low supply voltage Low current consumption e3 50 Ω input impedance at 945 MHz Low noise figure High power gain Lead Pb -free component Component in accordance to RoHS 2002/95/EC

Contextual Info: Freescale Semiconductor Technical Data Available at http://www.freescale.com. Go to Support/ Reference Designs/Networking and Communications Rev. 3, 12/2005 N - Channel Enhancement - Mode Lateral MOSFETs Device Characteristics From Device Data Sheet Designed for W- CDMA base station applications with frequencies from 2110

2N4341

Abstract: 2N4340 2N4340 equivalent SMP4340 NJ16 SMP4341 transistor 2N4340
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-12 B-12 01/99 2N4340, 2N4341 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Small Signal Amplifiers ¥ Current Regulators ¥ Voltage-Controlled Resistors At 25°C free air temperature:

Contextual Info: BUH515D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E81734 (N NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE APPLICATIONS: ■

BUH515D

Contextual Info: BUH515D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE 3 APPLICATIONS:

BUH515D

Abstract: new 21 inch colour tv circuit diagram
Contextual Info: BUH515D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E81734 (N NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE APPLICATIONS: ■

EB213

Abstract: transistor 6274 selection criteria of bipolar transistor
Contextual Info: Freescale Semiconductor Engineering Bulletin EB213 Rev. 0, 5/2003 Surge - Ringing Wave Clamp for GaAs CATV Module Protection by: Jeff Gengler Freescale Semiconductor INTRODUCTION CLAMP DEVICE SELECTION CRITERIA CATV amplifiers are required to withstand surges induced

TRANSISTOR 0835

Contextual Info: BUH515D  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE 3 APPLICATIONS:

BUH515D

Abstract: new 21 inch colour tv circuit diagram
Contextual Info: BUH515D  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E81734 (N NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE 3 APPLICATIONS:

CSG3001-18A04

Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Contextual Info: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power

ID121215

Abstract: cm100dy-28 IEF21KA2 ID121230 cm50dy-28 ID126030
Contextual Info: PO UE REX m INC / 3TE ]> m a t • TSTMbEl 0GD37S3 6 * P R X Powerex, Inc., HIIHs Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14

Contextual Info: Freescale Semiconductor, Inc.Order this document by MC12149/D MC12149 Low Power Voltage Controlled Oscillator Buffer LOW POWER VOLTAGE CONTROLLED OSCILLATOR BUFFER SEMICONDUCTOR TECHNICAL DATA NOTE: The MC12149 is NOT suitable as a crystal oscillator. •

BUH515D

Abstract: 2025 ct
Contextual Info: BUH515D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE 3 APPLICATIONS: