TRANSISTOR 127 NA Search Results

Contextual Info: SEMELAB PLC faPE D m 6133137 OGOOflTb 127 • S f l L B llll MOS POWER 4 IGBT 'Tin-j iFFi llll SEM E SML30G60AN LAB 600V 30A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: T c = 25°C unless otherwise specified.

AC128

Abstract: transistor AC128 AC128 transistor germanium transistor ac 128 valvo transistoren ac128 pnp germanium transistor ac128 ac128 germanium valvo valvo transistor
Contextual Info: NICHT FÜR N E U E N T W I C K L U N G E N AC 128 GERMANIUM - PNP - NF - TRANSISTOR für Endstufen, als Transistorpaar für Gegentakt-B-Schaltungen, in Verbindung mit AC 127 als komplementäres Paar Mechani sehe Daten: Gehäuse: Metall, JEDEC T0-1, 1 A 3 DIN 41 871

Contextual Info: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 Output Characteristics Collector Current mA Typical Capacitance (pF) (Ve.= 1 0 V ;f = 1MHz) Collector Dark Current (nA) (Ve. = SV; lF= 0mA)

transistor SMD p05

Abstract: 1981-R TRANSISTOR SMD 2X y 127 D TRANSISTOR 476 16q CP QUICK CONNECT L-398 LDA100 LDA101 LDA110
Contextual Info: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 Output Characteristics Collector Current mA Typical Capacitance (pF) (Ve.= 1 0 V ;f = 1MHz) Collector Dark Current (nA) (Ve. = SV; lF= 0mA)

SMD transistor UY

Abstract: smd transistor 406 1981-R TRANSISTOR SMD catalog transistor smd 127 transistor SMD p05 smd transistor 079 LDA100 transistor a102 LDA111
Contextual Info: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 O utput C haracteristics C ollecto r C urrent mA Typical C apacitance (pF) (V e. = 1 0 V ;f = 1M Hz) C o llecto r D ark C urrent (nA)

MSOP8 Part marking National

Abstract: General Semiconductor diode marking 49 TRANSISTOR BI 187 transport media and packing 2N3904 LM95231 LM95231CIMM LM95231CIMMX MMBT3904 MO-187
Contextual Info: February 2005 LM95231 TruTherm Precision Dual Remote Diode Temperature Sensor with SMBus Interface General Description The LM95231 is a precision dual remote diode temperature sensor RDTS that uses National’s TruTherm technology. The 2-wire serial interface of the LM95231 is compatible with

2N3904 geometry

Abstract: D1 diode
Contextual Info: August 2006 LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology 65nm/90nm General Description The LM95241 is a precision dual remote diode temperature sensor (RDTS) that uses National’s TruTherm technology. The 2-wire serial interface of the LM95241 is compatible with

TC88411F

Abstract: TC88411
Contextual Info: INTEGRATED OSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory

TC88411

Abstract: TC58A040F KC04 kc-04 TC58A040
Contextual Info: TOSHIBA TC58A040F TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically E rasable and Programmable Read Only Memory (NAND EEPROM) organized as 256 bits X 128 pages X 128 blocks.

new Jj8

Contextual Info: TO SH IB A TC58A040F TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E^PROM DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 256 bits X 128 pages X 128 blocks.

Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory

TC88411

Abstract: TC58A040F TC58A040 TC58A040F-7 NAND memory toshiba gate array
Contextual Info: INTEGRATED CIRCUIT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F TOSHIBA TECHNICAL DATA SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory

Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory

Contextual Info: TOSHIBA cIOtì 7 2 4 f l 0Q2R00S 370 TC58A040F PRELIMINARY 4Mbit 4M x 1 BIT CMOS AUDIO NAND EEPROM Description The TC58A040 is a single 5 volt 4M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 256 bits x 128 pages x 128 blocks.

Contextual Info: TDI-CCD area image sensor S7199-01/-01F Image sensor with a long, narrow photosensitive area for X-ray imaging The S7199-01 is a front-illuminated FFT-CCD image sensor developed for X-ray imaging. An FOS Fiber Optic plate with Scintillator sensitive to X-rays is directly coupled to the CCD chips, allowing X-ray imaging with high sensitivity. Two CCD

TDI ccd sensor

Abstract: ccd tdi binning
Contextual Info: TDI-CCD area image sensor S7199-01/-01F Image sensor with a long, narrow photosensitive area for X-ray imaging The S7199-01 is a front-illuminated FFT-CCD image sensor developed for X-ray imaging. An FOS Fiber Optic plate with Scintillator sensitive to X-rays is directly coupled to the CCD chips, allowing X-ray imaging with high sensitivity. Two CCD

Contextual Info: TDI-CCD area image sensor S8658-01/01F Image sensor with a long, narrow photosensitive area for X-ray imaging The S8658-01 is an front-illuminated FFT-CCD image sensor developed for X-ray imaging. A FOS Fiber Optic plate with Scintillator sensitive to X-rays is directly coupled to the CCD chips, allowing X-ray imaging with high precision. Three CCD

Contextual Info: PFC-Fundamentals 2. Active Power Factor Correction – Principle of Operation Temesi Ernö, Michael Frisch, Vincotech GmbH, Unterhaching/Germany For the development of applications with sinusoidal current consumption more design work will be required than ever before. New national and international standards and laws demand increased

CD40938

Abstract: CD4093B
Contextual Info: CD4093B Typ s COS/MOS Quad 2-lnput NAND Schmitt Triggers High-Voltage Types 20 Volt Rating The RCA-CD4093B conSists of four Schmitt• trigger CirCUits. Each Circuit functions as a two· Input NAND gate with Schmltt·trlgger action on both inputs. The gate switches at

SmD TRANSISTOR a42

Abstract: TRANSISTOR BC 136 TRANSISTOR BC 157 transistor BC 945 TRANSISTOR BC 187 SNA10A TRANSISTOR BC 413 MO-220-WGGD-2 pdf on BC 187 TRANSISTOR MO-220-WKKD-2
Contextual Info: Plastic Package Dimensional/Thermal Data The following table identifies all of the plastic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the plastic packages

TCA160

Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
Contextual Info: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;

MC100E404

Abstract: MC100E404FN MC100E404FNR2 MC10E404 MC10E404FN MC10E404FNR2 ECL IC NAND
Contextual Info: MC10E404, MC100E404 5VĄECL Quad Differential AND/NAND The MC10E404/100E404 is a 4-bit differential AND/NAND device. The differential operation of the device makes it ideal for pulse shaping applications where duty cycle skew is critical. Special design techniques were incorporated to minimize the skew between the upper

laptop mother board voltage details

Abstract: 452 diode 3904 transistor 2n3904 transistor 2N3904 LM95241 LM95241CIMM LM95241CIMM-1 LM95241CIMM-2 LM95241CIMMX
Contextual Info: LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology 65nm/90nm General Description The LM95241 is a precision dual remote diode temperature sensor (RDTS) that uses National’s TruTherm technology. The 2-wire serial interface of the LM95241 is compatible with

laptop mother board voltage details

Abstract: 3904 TRANSISTOR AMD Sempron 140 2N3904 LM95241 LM95241CIMM LM95241CIMM-1 LM95241CIMM-2 LM95241CIMMX LM95241CIMMX-1
Contextual Info: LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology 65nm/90nm • Remote temperature readings without digital filtering: General Description The LM95241 is a precision dual remote diode temperature sensor (RDTS) that uses National's TruTherm technology.