HAT1058C
Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,
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OC 140 germanium transistor
Abstract: germanium power devices corporation germanium transistors NPN OC 74 germanium transistor HSD879D Germanium Transistor
Contextual Info: HI-SINCERITY Spec. No. : HD200203 Issued Date : 1996.07.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. TO-126ML Features • Charger-up time is about 1 ms faster than of a germanium transistor.
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hd200203hsd879do-126ml183oc+7217oc260ococ 140 germanium transistorgermanium power devices corporationgermanium transistors npnoc 74 germanium transistorgermanium transistor
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germanium transistors NPN
Abstract: in 3003 TRANSISTOR HSD879D Germanium Transistor
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HD200203 Issued Date : 1996.07.15 Revised Date : 2002.02.26 Page No. : 1/3 HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. Features TO-126ML • Charger-up time is about 1 ms faster than of a germanium transistor.
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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HBD437D
Abstract: DSA0026081
Contextual Info: HI-SINCERITY Spec. No. : HD200201 Issued Date : 2001.04.01 Revised Date : 2005.08.16 Page No. : 1/4 MICROELECTRONICS CORP. HBD437D COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD437D is silison epitaxial-base NPN power transistor in TO-126ML plastic
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HSB1109
Abstract: HSD1609 sb1109 TL 188 TRANSISTOR PNP
Contextual Info: HI-SINCERITY Spec. No. : HE6607 Issued Date : 1993.03.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSD1609 TO-126ML
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HSB1109
Abstract: HSD1609
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6607 Issued Date : 1993.03.15 Revised Date : 2002.02.06 Page No. : 1/3 HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSD1609 TO-126ML
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HSD1609
Abstract: HSB1109
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6606 Issued Date : 1993.03.15 Revised Date : 2002.01.15 Page No. : 1/4 HSD1609 NPN EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSB1109 TO-126ML
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MJE13003D
Abstract: 180-TYP
Contextual Info: DC COMPONENTS CO., LTD. R MJE13003D DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. TO-126ML Pinning .163 4.12
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lb123d
Contextual Info: DC COMPONENTS CO., LTD. LB123D DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications. TO-126ML Pinning .163 4.12 .153(3.87) 1 = Emitter
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sd1609
Abstract: sd 1609 TO126ML HSB1109 HSD1609
Contextual Info: HI-SINCERITY Spec. No. : HE6606 Issued Date : 1993.03.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSD1609 NPN EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSB1109 TO-126ML
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HMPSA44V
Abstract: A44V
Contextual Info: HI-SINCERITY Spec. No. : HE6611 Issued Date : 1993.05.17 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HMPSA44V NPN EPITAXIAL PLANAR TRANSISTOR Description The HMPSA44V is designed for application that require high voltage. Features TO-126ML
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2SD882D
Contextual Info: DC COMPONENTS CO., LTD. 2SD882D DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in output stage of 1W audio amplifier, voltage regulator, DC-DC converter and relay driver. TO-126ML Pinning
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2SB772D
Abstract: transistor pnp 30V 2A 1W transistor pnp 30V 1A 1W power ic 5v 1A 034
Contextual Info: DC COMPONENTS CO., LTD. 2SB772D DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in output stage of 1W audio amplifier, voltage regulator, DC-DC converter and relay driver. TO-126ML Pinning
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HSB857D
Abstract: HE6705
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2002.03.06 Page No. : 1/4 HSB857D PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. Absolute Maximum Ratings Ta=25°C TO-126ML • Maximum Temperatures
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TL 188 TRANSISTOR PNP
Abstract: HTIP117D
Contextual Info: HI-SINCERITY Spec. No. : HD200204 Issued Date : 2002.04.01 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HTIP117D PNP EPITAXIAL PLANAR TRANSISTOR Description TO-126ML The HTIP117D is designed for use in general purpose amplifier and low-speed
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TL 188 TRANSISTOR PNP
Abstract: HSB857D
Contextual Info: HI-SINCERITY Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSB857D PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-126ML Absolute Maximum Ratings TA=25°C • Maximum Temperatures
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C5201 transistor
Abstract: c5201 Marking 8A 737 TRANSISTOR Transistor C5201 k 1457 BTC5201D3
Contextual Info: Spec. No. : C653D3 Issued Date : 2003.10.03 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTC5201D3 Features • Low VCE sat • High BVCEO • Excellent current gain characteristics Symbol Outline TO-126ML
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B1143
Abstract: transistor D1683 2SD 1143 2SB1143S
Contextual Info: Ordering number : EN2063C 2SB1143/2SD1683 Bipolar Transistor http://onsemi.com – 50V, (–)4A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of FBET, MBIT processes
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Contextual Info: HI-SINCERITY Spec. No. : HE6602 Issued Date : 1993.03.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSC3953 NPN EPITAXIAL PLANAR TRANSISTOR Description High definition CRT display video output, wide-band amplifier. TO-126ML Features • High fT: 500MHz
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sc2682
Abstract: HSC2682
Contextual Info: HI-SINCERITY Spec. No. : HE6626 Issued Date : 1994.12.07 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSC2682 NPN EPITAXIAL PLANAR TRANSISTOR Description Audio frequency power amplifier, high frequency power amplifier. TO-126ML Absolute Maximum Ratings TA=25°C
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sd669a
Abstract: HSD669A HSB649A
Contextual Info: HI-SINCERITY Spec. No. : HE6630 Issued Date : 1995.12.18 Revised Date : 2006.07.27 Page No. : 1/4 MICROELECTRONICS CORP. HSD669A NPN Epitaxial Planar Transistor Description Low frequency power amplifier complementary pair with HSB649A TO-126ML Absolute Maximum Ratings T =25°C
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HSB649A
Abstract: HSD669A 180320 HSD669A-C
Contextual Info: HI-SINCERITY Spec. No. : HE6630 Issued Date : 1995.12.18 Revised Date : 2003.06.18 Page No. : 1/3 MICROELECTRONICS CORP. HSD669A NPN EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier complementary pair with HSB649A TO-126ML Absolute Maximum Ratings Ta=25°C
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HSB649A
Abstract: TL 188 TRANSISTOR PNP SB649A HSD669A
Contextual Info: HI-SINCERITY Spec. No. : HE6629 Issued Date : 1995.12.18 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSB649A SILICON PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier complementary pair with HSD669A. TO-126ML Absolute Maximum Ratings TA=25°C
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