TRANSISTOR 11 Search Results

mcl610

Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601
Contextual Info: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR

MDA342

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU45/12 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor BLU45/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor in SOT-119 envelope

Contextual Info: UTC BU406 NPN EXPITAXIAL PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110° CRT.

Contextual Info: UTC BU406 NPN EXPITAXIAL PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110° CRT.

DTA114YE

Abstract: SMD310
Contextual Info: MOTOROLA Order this document by DTA114YE/D SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic

FC155

Contextual Info: Ordering number:EN5063 FC155 PNP Epitaxial Planar Silicon Transistor With bias resistances PNP Epitaxail Planar Silicon Transistor Constant-Current Circuit Applications Features Package Dimensions • Complex type of 2 devices (transistor with resistances and low saturation transistor) contained in one

MMBT3906 vishay

Contextual Info: MMBT3906 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBT3904 is recommended. • This transistor is also available in the TO-92 case

transistor K 1096

Abstract: BLY89C IEC134 BLY-89c 3 w RF POWER TRANSISTOR NPN
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DÛ2L OObBS'H =134 ■ PHIN 11 BLY89C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 13,5 V . The transistor is resistance stabilized

PT 4304 a transistor

Abstract: 2SC3587 noise diode
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise

transistor NEC D 586

Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise

transistor BUX

Abstract: BUX14 TR07
Contextual Info: *B U X 14 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN, TRIPLE DIFFUSE % Preferred device D is p o s itif recom m andé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension Thermal fatigue inspection

Contextual Info: TRANSISTOR MODULES- SQQ300BA60 U L;E 76102 M ) is a Darlington power transistor module with a , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 200ns). The mounting base of the module is electrically isolated

IC A 3120

Abstract: Transistor AC 51 bx transistor a 3120 ic VCEX1000V SQD400AA100 derating factor
Contextual Info: TRANSISTOR MODULE SQD400AA100 UL;E76102 （M） SQD400AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for

2SD2165

Abstract: NEC marking b
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING UNIT: mm for high hFE. This transistor is ideal for simplifying drive circuits and

2SD2165

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING UNIT: mm for high hFE. This transistor is ideal for simplifying drive circuits and

bx 18A

Abstract: 702 TRANSISTOR SQD400AA120
Contextual Info: TRANSISTOR MODULE SQD400AA120 UL;E76102 （M） SQD400AA120 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter

foto sensor

Abstract: optical interrupter darlington gabellichtschranke datasheet ic 4060 Fototransistor Q62702-P5263
Contextual Info: Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode • Si-Foto Darlington-Transistor mit Tageslichtsperrfilter • Hoher Koppelfaktor

QCA300BA60

Abstract: 675g M6 transistor
Contextual Info: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is

Nec K 872

Abstract: 517 E1 3007 NEC k 2134 transistor 2SC5668 k 3918 TRANSISTOR MARKING 702 6pin ic uPA892TC MARKING 702 6pin
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA892TC NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3.6 to 4.2 GHz oscillation application • 21.0 GHz fT high-gain transistor fT = 21.0 GHz TYP., S21e2 = 11.5 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz

Contextual Info: TRANSISTOR MODULE SQP400AA120 S Q D 4 0 0 A A 1 2 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for

7E SOT23 NXP

Abstract: 771-MMBTA92215 MAM256
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MMBTA92 PNP high-voltage transistor Product specification Supersedes data of 2000 Apr 11 2004 Jan 16 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 FEATURES PINNING • Low current max. 100 mA

Radar

Abstract: diode gp 429 HV400 hvvi transistor 1150
Contextual Info: HVV1012-050 HVV1012-050 HVV1012-050 HVV1012-050 L-Band L-BandAvionics AvionicsPulsed PulsedPower PowerTransistor Transistor HVV1012-050 L-Band Avionics Pulsed Power The innovative Semiconductor Company! L-Band Avionics Pulsed Power Transistor 1025-1150 1025-1150MHz,

Contextual Info: DISCRETE SEMICONDUCTORS DAT MMBTA92 PNP high-voltage transistor Product specification Supersedes data of 2000 Apr 11 2004 Jan 16 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 PINNING FEATURES • Low current max. 100 mA