TRANSISTOR 1020 Search Results

tip122 tip127 audio board

Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Contextual Info: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents

TRANSISTORS BJT bc548

Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Contextual Info: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002

transistor 131 8D

Abstract: transistor k 3728 QBE+61.2+dp2
Contextual Info: N AMER PHILIPS/DISCRETE 86D OLE D T' 01928 ^53=131 DDimbt. 5 BLY90 A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran­

BLA1011-200

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2001 Feb 27 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain

486DX-CPU

Abstract: tamagawa 486DX transistors mos retrograde well 0.35
Contextual Info: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling

Contextual Info: preliminary data version 03/03 V23990-P434-F-PM flow PACK 1, 600V Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Condition

AA5M

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC4774 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING 6V, 50mA 3 FEATURES 1 * Very low output-on resistance (Ron). * Low capacitance. 2 SOT-323 *Pb-free plating product number: 2SC4774L

160N04

Abstract: MP-25ZT nec a640
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TDG-E1-AY Note

Contextual Info: fl SIGNETICS INTEGRATED CIRCUITS 54H00 Series 74H00 Series The 54H00/74H00 logic family is high speed TTL III. These transistor-transistor logic circuits were designed for general purpose applications. They have good external noise immunity and high fan-out.

SMD 0508

Abstract: BLA1011-200 BLA1011S-200 250 B 340 smd Transistor sym039 SMD0508 NV SMD TRANSISTOR
Contextual Info: BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 — 26 October 2005 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1:

BUK457-400B

Abstract: T0220AB
Contextual Info: PHILIPS IN TE RNA TI ONA L bSE J> Bl 7110flEb ODb413b Philips Semiconductors Power MOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: MS1263 RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS Features • • • • • • 512 MHz 12.5 VOLTS POUT = 15 W MINIMUM GP = 7.8 dB INPUT MATCHED COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1263 is a NPN silicon RF power transistor designed for

2N5005

Abstract: TO-210AA Package TO-59 Package to-210AA 2N5005 JANTX 2N5003
Contextual Info: 2N5003 and 2N5005 PNP POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/535 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed transistor is rated at 5 amps and is military qualified up to a JANTXV level.

Contextual Info: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

ZXTN25100DG

Abstract: ZXTN25 TS16949 ZXTN25100DGTA ZXTP19100CG
Contextual Info: ZXTN25100DG 100V NPN high gain transistor in SOT223 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 3A VCE(sat) < 100mV @ 1A RCE(sat) = 85m⍀ PD = 3.0W Complementary part number ZXTP19100CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor

14N60E

Contextual Info: MOTOROLA O rder this docum ent by M GW 14N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 14N 60ED Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged

ZXTP2012GTA

Abstract: sot223 device Marking ZXTP2012G ZXTP2012GTC Bv 42 transistor zxtP
Contextual Info: ZXTP2012G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

ZXTN

Abstract: ZXTN2011GTC sot223 device Marking ZXTN2011G ZXTN2011GTA Bv 42 transistor
Contextual Info: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

UC3655

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UC3655 CMOS IC 500mA SYNCHRONOUS STEP-DOWN DC/DC CONVERTERS  DESCRIPTION The UTC UC3655 is a synchronous-rectification type DC/DC converters with a built-in 0.6Ω P-channel driver transistor and 0.7Ω N-channel switching transistor, which designed to allow the use of

P14N60E/D

Contextual Info: MOTOROLA O rder this docum ent by M G P14N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGP14N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UC3655 Preliminary CMOS IC 500mA SYNCHRONOUS STEP-DOWN DC/DC CONVERTERS „ DESCRIPTION The UTC UC3655 is a synchronous-rectification type DC/DC converters with a built-in 0.6Ω P-channel driver transistor and 0.7Ω N-channel switching transistor, which designed to allow the use of

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UC3655 Preliminary CMOS IC 500mA SYNCHRONOUS STEP-DOWN DC/DC CONVERTERS „ DESCRIPTION The UTC UC3655 is a synchronous-rectification type DC/DC converters with a built-in 0.6Ω P-channel driver transistor and 0.7Ω N-channel switching transistor, which designed to allow the use of ceramic

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UC3655 Preliminary CMOS IC 500mA SYNCHRONOUS STEP-DOWN DC/DC CONVERTERS  DESCRIPTION The UTC UC3655 is a synchronous-rectification type DC/DC converters with a built-in 0.6Ω P-channel driver transistor and 0.7Ω N-channel switching transistor, which designed to allow the use of