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    TRANSISTOR 101 Search Results

    TRANSISTOR 101 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    93425ADM/B
    Rochester Electronics LLC 93425 - 1K X 1 TTL SRAM PDF Buy
    27S185DM/B
    Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    TRANSISTOR 101 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MCT8 opto

    Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
    Contextual Info: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR


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    MCT210 MCT26 MCT66 C1255 10TT1. MCT8 opto c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35 PDF

    u101b

    Contextual Info: DATA SHEET COMPOUND TRANSISTOR _ j f P A 101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS Units in mm • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)


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    uPA101B 14-pin tPA101G u101b PDF

    transistor TE 901 equivalent

    Abstract: transistor TE 901 IGT6D11 IGT6E11
    Contextual Info: IGT6D11,E11 Insulated Gate Bipolar Transistor 101 AMPERES 400, 500 VOLTS EQUIV. RdS ON = 0.27 Cl This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and


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    IGT6D11 6D11- transistor TE 901 equivalent transistor TE 901 IGT6E11 PDF

    EE-125

    Abstract: photo transistor high current photo transistor KDT5001A PHOTO TRANSISTOR current to voltage photo-transistor PK640 "photo transistor"
    Contextual Info: Silicon photo transistor KDT5001A The KDT5001A is high sensitivity silicon photo [Unit : mm] Dimensions transistor which converts light to electrical signal. This photo transistor is both COB package and easy to mount. Features Higly sensitive photo transistor


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    KDT5001A KDT5001A EE-125 photo transistor high current photo transistor PHOTO TRANSISTOR current to voltage photo-transistor PK640 "photo transistor" PDF

    color sensitive PHOTO TRANSISTOR

    Abstract: Rise time of photo transistor KDT3002A npn photo transistor 3mm photo transistor
    Contextual Info: Silicon photo transistor KDT3002A The KDT3002A is high sensitivity NPN silicon photo [Unit : mm] Dimensions transistor mounted in Φ3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor


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    KDT3002A KDT3002A color sensitive PHOTO TRANSISTOR Rise time of photo transistor npn photo transistor 3mm photo transistor PDF

    Mitsubishi M54564

    Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
    Contextual Info: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide


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    A/20V 16P2Z 16pin 225mil 05MIN. 20pin 300mil 20P2N 20P2E Mitsubishi M54564 M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p PDF

    IC A 3120

    Abstract: Transistor AC 51 bx transistor a 3120 ic VCEX1000V SQD400AA100 derating factor
    Contextual Info: TRANSISTOR MODULE SQD400AA100 UL;E76102 (M) SQD400AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for


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    SQD400AA100 E76102 SQD400AA100 113max. 100msec10sec 1msec100msec VCC600V IC A 3120 Transistor AC 51 bx transistor a 3120 ic VCEX1000V derating factor PDF

    bx 18A

    Abstract: 702 TRANSISTOR SQD400AA120
    Contextual Info: TRANSISTOR MODULE SQD400AA120 UL;E76102 (M) SQD400AA120 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for


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    SQD400AA120 E76102 SQD400AA120 113max. bx 18A 702 TRANSISTOR PDF

    1N4001 transistor free

    Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn
    Contextual Info: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.


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    BU323AP BU323AP r14525 BU323AP/D 1N4001 transistor free BC337 figure 1N4001 BC337 BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn PDF

    2SC945

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR  DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor.  FEATURES * Collector-Emitter voltage:


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    2SC945 2SC945 150mA 2SA733 2SC945L-x-T92-B 2SC945G-x-T92-B 2SC945L-x-T92-K 2SC945G-x-T92-K QW-R201-005 PDF

    2sc945

    Abstract: 2SC945L 2SC945 R
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION 1 The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. TO-92 FEATURES * Collector-Emitter voltage:


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    2SC945 2SC945 150mA 2SA733 2SC945L 2SC945-x-T92-B 2SC945L-x-T92-B 2SC945-x-T92-K 2SC945L-x-T92-K 2SC945L 2SC945 R PDF

    NEC IC D 553 C

    Abstract: nec 2741 702 mini transistor
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.


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    2SC4226 2SC4226 SC-70 2SG4226-T1 NEC IC D 553 C nec 2741 702 mini transistor PDF

    M54577P

    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54577P 7-UNIT 30mA TRANSISTOR ARRAY DESCRIPTION M54577P is seven-circuit transistor arrays. The circuits are made of NPN transistors. The semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


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    M54577P M54577P PDF

    2N6988

    Abstract: 2N6988J 2N6988JS 2N6988JV 2N6988JX 2N6990 pnp 8 transistor array
    Contextual Info: 2N6988 Silicon PNP Transistor Data Sheet Description Applications Complement to the 2N6990 • General purpose switching • 4 Transistor Array • PNP silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E


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    2N6988 2N6990 MIL-PRF-19500 2N6988J) 2N6988JX) 2N6988JV) 2N6988JS) MIL-STD-750 MIL-PRF-19500/558 2N6988 2N6988J 2N6988JS 2N6988JV 2N6988JX 2N6990 pnp 8 transistor array PDF

    NEC 2905

    Abstract: NEC 1357 2SC4228 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.


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    2SC4228 2SC4228 NEC 2905 NEC 1357 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC PDF

    Contextual Info: 2N6987 Silicon PNP Transistor Data Sheet Description Applications Complement to the 2N6989 • General purpose switching • 4 Transistor Array • PNP silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E


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    2N6987 2N6989 MIL-PRF-19500 2N6987J) 2N6987JX) 2N6987JV) 2N6987JS) MIL-STD-750 MIL-PRF-19500/558 PDF

    2N6989

    Abstract: 2N6987 2N6987J 2N6987JS 2N6987JV 2N6987JX pnp 8 transistor array
    Contextual Info: 2N6987 Silicon PNP Transistor Data Sheet Description Applications Complement to the 2N6989 • General purpose switching • 4 Transistor Array • PNP silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E


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    2N6987 2N6989 MIL-PRF-19500 2N6987J) 2N6987JX) 2N6987JV) 2N6987JS) MIL-STD-750 MIL-PRF-19500/558 JANT10 2N6989 2N6987 2N6987J 2N6987JS 2N6987JV 2N6987JX pnp 8 transistor array PDF

    Contextual Info: 2N6989 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N6987 • General purpose switching • 4 Transistor Array • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E


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    2N6989 2N6987 MIL-PRF-19500 2N6987J) 2N6987JX) 2N6987JV) 2N6987JS) MIL-STD-750 MIL-PRF-19500/559 PDF

    18P4G

    Abstract: 20P2N-A M54513FP M54513P
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54513P/FP 8-UNIT 50mA TRANSISTOR ARRAY DESCRIPTION M54513P and M54513FP are eight-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with


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    M54513P/FP M54513P M54513FP 18P4G 20P2N-A PDF

    QCA30B60

    Abstract: QCA30A60 qca30a QCA30B40 QCB30A40 QCB30A60 c2e1
    Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 (M) QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max


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    QCA30B/QCB30A40/60 E76102 QCA30B QCB30A 94max 110TAB 32max 31max 35max QCA30B60 QCA30A60 qca30a QCA30B40 QCB30A40 QCB30A60 c2e1 PDF

    A 564 transistor

    Abstract: 3181 R33 transistor A 564
    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.


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    2SC4227 2SC4227 SC-70 A 564 transistor 3181 R33 transistor A 564 PDF

    C2E1

    Abstract: QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab
    Contextual Info: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 (M) QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max


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    QCA75A/QCB75A40/60 E76102 QCA75A QCB75A 94max VCEX400/600V 32max 31max 110TAB Ic75A C2E1 QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab PDF

    C2E1

    Abstract: transistor QCA75A60 QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 94MAX
    Contextual Info: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 (M) QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max


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    QCA75A/QCB75A40/60 E76102 QCA75A QCB75A 94max VCEX400/600V 32max 31max 110TAB Ic75A C2E1 transistor QCA75A60 QCA75A40 QCA75A60 QCB75A40 QCB75A60 94MAX PDF

    nec 2741

    Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.


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    2SC4226 2SC4226 SC-70 2SC4226-T1 nec 2741 2SC4226 datasheet 2SC4226-T1 2SC4226-T2 PDF