TR X 13001 Search Results

HA13001

Abstract: HA13001 amplifier HA-13001 SRUT 5.5w HA13001 hitachi
Contextual Info: H A 13001 5.5W Dual/17.5W B T L Audio P o w er Am plifier •t t S o i t t ♦ n . 4 « ¿ ^ h 11 . o f t ' # * * " r * » t W t A M ?» 1 1 , O f lif c ie m t - C T .U O k H i. 0 .5 W u t 0.2294 typ • B T L T > T * LT«!HILfc«kä O A S O « J * 0 |M t* * > T . O C L T f U f f l T è J t .

Contextual Info: 12 13 M A TE R IAL NO. 10 E N G IN E E R I N G NO. LENGTH 1300140050 2R700ÓA20A120 12" + . 7 5 - 0 13 0 0 1 4 -0 0 5 5 2R7006A20R0Ó0 6 '0 " [305m m +2.19 + 19.0-0] [1.8M + 5 5 . 6 - 0 ] REF. KNO CK-O UT 1"-16 HOLE THREAD 1/2-14- N P T I 5EE M CHART - - :- R E F -203.2

13001 SW 8A

Abstract: TA-3061 TA306 TA-306 MCH3410 sw 13001 tr 13001 13001 s 60 1d1100
Contextual Info: 注文コード No. N 6 8 6 4 MCH3410 No.N 6 8 6 4 13001 新 MCH3410 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

Contextual Info: DESCRIPTION The MSM548332 is a 3.3-Mbit, 960bits x 290 lines, Field Memory. Access is done line by line. The line address must be set each time a line is changed. More than two MSM548332s can be cascaded directly without any delay devices between them. Cascading MSM548332s provides larger capacity and longer delay.

E1007

Abstract: AM2930 D-10
Contextual Info: REVISIONS LTR A DATE YR-MO-DA DESCRIPTION APPROVED 1988 NOV 17 Inactivate case outline 3 for new design. Change drawing CAGE code to 67268. Editorial changes throughout. CUIRRENT CAGE CODE 67268 REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PMIC N/A

germanium

Abstract: 74HC244A 74HC589 ALI M 3329 B1 74HC163
Contextual Info: High-Speed CMOS Data Function Selector Guide Design Considerations Device Data Sheets [3 Ordering Information [4 W H A T ’S NEW ! DATA SHEETS ADDED DATASHEETS DELETED MC74HCU04A MC54/74HC390A MC54/74HC08 MC54/74HCT541 MC74HC76 MC54/74HC393A MC54/74HC540

binary to abcd code

Abstract: MC74HC4514
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C74HC4514 1 -o f-1 6 D e c o d e r/D e m u ltip le x e r w ith A d d ress L a tc h High-Performance Silicon-Gate CMOS B [I The MC74HC4514 is identical in pinout to the MC14514B metal-gate CMOS device. The device inputs are compatible with standard CMOS

000000F

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC4514 1 -o f-1 6 D e c o d e r/D e m u ltip le x e r w ith A dd ress Latch High-Performance Silicon-Gate CM O S T he M C 54/74H C 45 14 is id entical in p in o u t to th e M C14514B m eta l-g a te CM O S 1 device. T he device in p u ts are c o m p a tib le w ith standard CM O S o u tp u ts ; w ith p u llu p

Contextual Info: PI3USB102E USB 2.0 High-Speed 480 Mbps Switch with 5V Protection Features Description • USB 2.0 compliant (high speed, full speed, and low speed) The PI3USB102E is a single differential channel 2:1 multiplexer/ demultiplexer USB 2.0 Switch. Industry leading advantages include a propagation delay of 250ps, resulting from its low channel

hc4538a

Abstract: 74HC4538A Germanium Schottky diode ha 3715 DL129 MC14514B MC74HC4514 MC74HCXXXXN BCD latch
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC74HC4514 1-of-16 Decoder/Demultiplexer with Address Latch High-Performance Silicon-Gate CMOS The MC74HC4514 is identical in pinout to the MC14514B metal-gate CM OS device. The device inputs are compatible with standard CMOS

EL115

Contextual Info: üIS íEl Representatives W I R E L E S S A ftC Europe Denmark Turkey United Kingdom G e v e k e T e k n ik A /S E R D A E le k tro n ik s A S R o s k ild e v e j 8 - 1 0 2 6 2 0 A lh e r ts lu n d T el: 4 5 4 3 6 8 M l 0 0 G a ra n ti K o z a E v leri A lis v e ris B lo k N o . 2 0

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

Contextual Info: PI6C10806B 1.5V/1.8V/2.5V/3.3V, 160MHz, Low Skew 1:6 Crystal to LVCMOS Clock Buffer Features Description • • • • • • • • Pericom Semiconductor’s PI6C10806B is a low skew six output crystal oscillator driver. Crystal oscillator input range is from

13001b

Abstract: SG75325N 16-pin ceramic dip silicon general MIL-M-38510 SG55325J JAN55325J 13001BEA
Contextual Info: SG55325/SG75325 SILIC O N g Ë nef ^ l DUAL SOURCE / DUAL SINK MEMORY DRIVER LINEAR INTEGRATED C IRCUITS DESCRIPTIO N FEATURES The SG55325/SG75325 is a monolithic dual source/dual sink driver designed to meet the high current and last switching speed requirements

Contextual Info: PI90LV031A PI90LV027A PI90LV017A 3V LVDS High-Speed Differential Line Drivers Features Description • Signaling Rates >400Mbps 200 MHz The PI90LV031A, PI90LV027A, and PI90LV017A are differential line drivers that use low-voltage differential signaling (LVDS)

nmb-mat

Abstract: P9730 nmb-mat 2410ML nmb-mat 7 P9742 FBA08A24H 1204KL04WB59B00 TPV 3100 FBL09A12H FBA09A24H
Contextual Info: EU071 — Section Reference Index INCLUDES Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . . . . . . . . . . . . . 20-288 SMT INCLUDES RF Product . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 289-316

6k16e

Abstract: TEA II04 256KX16 AS4LC256K16E0 AS4LC256K16E0-35JC
Contextual Info: Preliminary information •■ A S4LC256K16E0 1 3.3V 2 5 6 K X 16 C M O S DRAM EDO Features • 5 1 2 re fre s h c y c le s, 8 m s re fre s h in te rv a l - R A S -only o r C A S-before-RA S re fre s h o r se lf re fre s h • R e a d -m o d ify -w rite

th 2167

Abstract: sw 13001
Contextual Info: Ordering number : ENN6901 N-Channel Silicon MOSFET MCH3412 ISAÊlYOi Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resinstance. • Ultrahigh-speed switching. • 4V drive. unit : mm 2167 [M C H 3 412 ] 0.15, 4 l l ip — 0.65

Contextual Info: H Y 5 1 V 4 2 6 0 B •HYUNDAI S e r ie s 256KX 16-bit CMOS DRAM with 2 CAS PRELIMINARY DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CM OS process technology and advanced circuit design technique to achieve

RJK03P7DPA

Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position

motorola hc04

Abstract: 54HCXXXXJ 74HC4514E 1A001
Contextual Info: MOTOROLA SC LOGIC b3b?252 QDTEl? 'iSfl blE D MOTOROLA • SEM IC O N D U C TO R TECHNICAL DATA MC54/74HC4514 1-of-16 Decoder/Dem ultiplexer w ith A d d re ss Latch J SUFFIX CERAMIC CASE 756*01 High-Performance Silicon-Gate CMOS T he M C 54/74H C 45 14 is id entical in p in o u t to th e M C14514B m eta l-gate CM O S

Contextual Info: Infiniium DCA-X 86100D Wide-Bandwidth Oscilloscope Mainframe and Modules Data Sheet Table of Contents Overview of the Infiniium 86100D DCA-X .2 Specifications .3 General and Mainframe .3