TR IRF530 Search Results

IRF530NS

Abstract: 7A, 100v fast recovery diode AN-994 IRF530N IRF530NL IRF530S 4.5v to 100v input regulator
Contextual Info: PD - 91352B IRF530NS IRF530NL HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description

IRF530 mosfet

Abstract: TA17411 IRF530 TB334 irf530g
Contextual Info: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530 Data Sheet February 2002 14A, 100V, 0.160 Ohm, N-Channel Power

IRF530

Abstract: tr irf530
Contextual Info: IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF530 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.16 Ω 14 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE

IRGB10B60KD

Abstract: C-150 IRF1010 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
Contextual Info: PD - 94382C IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

51a marking

Abstract: IRFZ44V IRFZ44VS IRF530S IRFZ44VL IRL3103L
Contextual Info: PD - 94050A IRFZ44VS IRFZ44VL l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications HEXFET Power MOSFET D VDSS = 60V RDS on = 16.5mΩ

C-150

Abstract: IRF1010 IRF530S IRGB4B60K IRGS4B60K IRGSL4B60K
Contextual Info: PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.

irg 250

Abstract: IRGSL6B60K C-150 IRF530S IRGB6B60K IRGS6B60K
Contextual Info: PD - 94575A IRGB6B60K IRGS6B60K IRGSL6B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. IC = 7.0A, TC=100°C

C-150

Abstract: IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD transistor* igbt 70A 300 V
Contextual Info: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

IRF 450 MOSFET

Abstract: IRF2204L IRF2204S 170AV 94502
Contextual Info: PD - 94502 IRF2204S IRF2204L AUTOMOTIVE MOSFET Typical Applications ● ● HEXFET Power MOSFET Electric Power Steering 14 Volts Automotive Electrical Systems D VDSS = 40V Features ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance

IRF2805L

Abstract: IRF2805S
Contextual Info: PD - 94428 IRF2805S IRF2805L AUTOMOTIVE MOSFET Typical Applications ● ● ● ● HEXFET Power MOSFET Climate Control ABS Electronic Braking Windshield Wipers D VDSS = 55V Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance

IRFB3306PBF

Abstract: IRFB3306 AN-994
Contextual Info: PD - 97098A IRFB3306PbF IRFS3306PbF IRFSL3306PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

AN-994

Abstract: IRFB3507 IRFS3507 IRFSL3507
Contextual Info: PD - 96903B IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.

MOSFET IRF 380

Abstract: MOSFET IRF 1010 NS4263 AN-994 IRFB4610 IRFS4610 IRFSL4610 irf 100v 100A
Contextual Info: PD - 96906C IRFB4610 IRFS4610 IRFSL4610 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt

IRFB3307

Abstract: AN-994 IRFS3307 IRFSL3307
Contextual Info: PD - 96901C IRFB3307 IRFS3307 IRFSL3307 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.

IRF530N

Abstract: IRFI530N 4.5v to 100v input regulator
Contextual Info: PD - 9.1353A IRFI530N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 100V RDS on = 0.11Ω G Description ID = 12A

Alternator regulator

Abstract: AN-994 IRF3808L IRF3808S 94338 IRF380
Contextual Info: PD - 94338A IRF3808S IRF3808L AUTOMOTIVE MOSFET Typical Applications ● ● HEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating

cds 151a

Abstract: diode aa 90 IRF530S IRFZ48VS
Contextual Info: PD - 94051A IRFZ48VS HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 60V RDS on = 12mΩ

IRF3205S

Abstract: IRF3205 irf 146 transistor 107A equivalent irf320 AN-994 IRF3205L IRF530S
Contextual Info: PD - 94149A IRF3205S IRF3205L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description

AN-994

Abstract: IRF3205L IRF3205S IRF530S
Contextual Info: PD - 94149A IRF3205S IRF3205L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description

71A marking

Abstract: AN-994 IRF530S IRL3803 IRL3803VL IRL3803VS
Contextual Info: PD - 94735 IRL3803VS IRL3803VL HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3803VS Low-profile through-hole (IRL3803VL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V

*l5602s

Abstract: IRL5602S
Contextual Info: PD- 91888 IRL5602S HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated D VDSS = -20V RDS on = 0.042W G ID = -24A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced

AN-994

Abstract: IRF530S IRL2203NL IRL2203NS
Contextual Info: PD - 94394A IRL2203NS IRL2203NL l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated 100% RG Tested HEXFET Power MOSFET D VDSS = 30V RDS on = 7.0mΩ G ID = 116A‡

Contextual Info: PD - 9.1326B International IOR Rectifier IRL2505S PRELIM IN ARY HEXFET Power MOSFET • • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature

Equivalent IRL3713

Abstract: IRL3713 transistor IRF 630 IRF1010 IRF530S IRL3103L IRL3713L IRL3713S GS Logo Marking 30A TP1500
Contextual Info: PD - 94184D IRL3713 IRL3713S IRL3713L SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested HEXFET Power MOSFET