TR 441 Search Results

Contextual Info: NOTES: REVISION B MHDMI-19-XX-X-XX-X-TR 1. REPRESENTS A CRITICAL DIMENSION. 2. MINIMUM RETENTION FORCE: 2.00N [.450 LB] 3. ROHS COMPLIANT. 4. TAPE & REEL WILL BE SUPPLIED WHETHER OR NOT-TR IS SPECIFIED. 5. FOR QUANTITIES UP TO 49 PIECES, NO LEADER, TR

Contextual Info: NOTES: REVISION C MHDMI-19-XX-X-XX-X-TR 1. REPRESENTS A CRITICAL DIMENSION. 2. MINIMUM RETENTION FORCE: 2.00N [.450 LB] 3. ROHS COMPLIANT. 4 . TAPE & REEL WILL BE SUPPLIED WHETHER OR NOT-TR IS SPECIFIED. 5. FOR QUANTITIES UP TO 49 PIECES, NO LEADER, TR

Nanotec Electronic GmbH

Contextual Info: HYUNDAI REPRESENTATIVES CENTRAL REGION CANADA TECH T R EK , LTD. 1015 Matheson Blvd. Unit #6 Mississauga, Ontario L4W 3A4 TECH TR EK , LTD. 2271 Guenette St. St. Laurent, Quebec H4R 2E9 TECH TR EK , LTD. 155 Terence Matthews Cres., Unit 7, Kanata, Ontano K2M 2A8

tcam

Contextual Info: KMM5402000A/AG DRAM MODULES 2 M X 4 0 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tR A C tR C K M M 5402000A - 7 70ns 20 ns 130ns K M M 5402000A - 80ns 2 0 ns 150ns 25ns 180ns 8 K M M 5402000A -10 • • • • • • •

trw RF POWER TRANSISTOR

Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Contextual Info: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .

Contextual Info: KM44C1000ASL CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: tR A C tC A C tR C KM 44C1000ASL- 7 70 ns 20 ns 130ns KM 44C 1 00 0A S L - 8 80ns 20 ns 150ns K M 4 4 C 10OOASL-10 100ns 25 n s 18 0 n s

HN27C301

Abstract: HN27C301G HN27C101 HN27C101AG HN27C101G HN27C301AG
Contextual Info: HN27C101 AG Series-HN27C301 AG Series 131072-word x 8-bit CMOS UV Erasable and Programmable ROM T he Hitachi HN27C101AG/HN27C301AG is a 1M b it u l tr a v i o le t e ra s a b le a n d e le c tr ic a lly program m able ROM . This device is packaged in a

157b

Contextual Info: CMOS DRAM KM416C157B/BL/BLL 256K X 16 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: T h e S a m s u n g K M 4 1 6 C 1 5 7 B /B L /B L L is a C M O S h ig h tR A C tC A C tR C KM 416 C 157B /B L/B LL-5 50ns 15ns

D 5038 Transistor Horizontal

Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
Contextual Info: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching

B083D

Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
Contextual Info: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik

Contextual Info: XC9260/XC9261 シリーズ JTR05042-002 COT 制御 1.5A 降圧同期整流 DC/DC コンバータ ☆GreenOperation 対応 •概要 XC9260/XC9261 シリーズはセラミックコンデンサ対応で Pch MOS ドライバ Tr.および Nch MOS ドライバ Tr.を内蔵した同期整流タイ

Contextual Info: XC9262 シリーズ JTR05043-002 COT 制御 1.5A 降圧同期整流 DC/DC コンバータ ☆GreenOperation 対応 •概要 XC9262 シリーズはセラミックコンデンサ対応で Pch MOS ドライバ Tr.および Nch MOS ドライバ Tr.を内蔵した同期整流タイプの降圧

Contextual Info: XC9259 シリーズ JTR05040-001 COT 制御 1A 降圧同期整流 DC/DC コンバータ ☆GreenOperation 対応 •概要 XC9259 シリーズはセラミックコンデンサ対応で Pch MOS ドライバ Tr.および Nch MOS スイッチ Tr.を内蔵した同期整流タイプの降

Contextual Info: XC9260/XC9261 シリーズ JTR05042-001 COT 制御 1.5A 降圧同期整流 DC/DC コンバータ ☆GreenOperation 対応 •概要 XC9260/XC9261 シリーズはセラミックコンデンサ対応で Pch MOS ドライバ Tr.および Nch MOS ドライバ Tr.を内蔵した同期整流タイ

diode t25 4 HO

Abstract: diode b34 b34 diode 2SJ117 11X1 2SK310 Hitachi Scans-001
Contextual Info: blE D 441b2G5 DDIE^IM flbl « H I T H 2SJ117 H ITA CH I/tO PTO ELEC TR O N IC S SILICON P-CHANNEL MOS FET 1 HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SK310 • FEATURES • High Breakdown Voltage. • High Speed Switching.

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . DIODES Diodes - Protect Against Transient Voltage Surge and ESD T VS and ESD Protection Diodes for TVS and ESD Protection Featured Products Tr a n s Z o r b A v a l a n c h e Tr a n s i e n t Vo l t a g e S u p p r e s s o r s

M29XP1

Abstract: 20D0 QQ-C-530 TEFLON MIL-P-19468 lt 626
Contextual Info: REV. A DATE DESCRIPTION 1 2 /2 9 /0 0 UPDATE PLATING TO SILVER 3.20 [.1 2 6 ] 4.00 [.1 5 8 ] 8.30 [.3 2 7 ] RECOMMENDED CABLE STRIPPING DIM'S M29XP1.5 / cO f\| O o> tr > cm o i_n Csl T - < <J O < -1 1 .2 0 [. 4413- N0TES: FINISH (PLATING THICKNESS IN MICRO-INCHES)

SMBJxxA

Abstract: DO220A TVS diode MELF 275 SMA SMB diode guide SM6A27 DO-218AB vcut03b1-dd1 SACXX VBUS05L1 47 2L axial diode DO-219AB
Contextual Info: V i s h ay In t e r t e c h n o l o g y, In c . Diodes - Protect Against Transient Voltage Surge and ESD I INNOVAT AND TEC O L OGY T VS and ESD Protection N HN DIODES O 19 62-2012 Diodes for TVS and ESD Protection Featured Products Tr a n s Z o r b A v a l a n c h e Tr a n s i e n t Vo l t a g e S u p p r e s s o r s

AO331

Abstract: ha 1452 Y 335 STDH150 nr2d2 FD2S
Contextual Info: Appendix Maximum Fanouts C Appendix C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.073ns, one fanout (SL = 0.00412pF) Cell Name ad2 ad2b ad2bd2 ad2bd4 ad2bd8 ad2d2 ad2d4 ad2d8 ad3 ad3d2 ad3d4 ad4 ad4d2

T324

Abstract: T325
Contextual Info: ISDN MAGNETICS UPO Interface Transformer • Qualified per Bellcore TR-TSY-000357-1 TM9936 • Minimum interwinding breakdown voltage of 1500 Vrms ELECTRICAL SPECIFICATIONS at 25° C Part Number 2771J Turns Ratio ± 2% 1CT : 1.25 Primary Inductance* mH min

t702 8

Contextual Info: MODEM MAGNETICS Global V.90 and V.34 Transformers • Intended for use in high-speed modem applications • Features very low interwinding capacitance, wellisolated windings, and low total harmonic distortion • Qualified per Bellcore TR-TSY-000357-1 TM9961

BELLCORE TSY

Abstract: 2771J PEB2095
Contextual Info: ISDN MAGNETICS UPO Interface Transformer • Qualified per Bellcore TR-TSY-000357-1 TM00209 • Minimum interwinding breakdown voltage of 1500 Vrms ELECTRICAL SPECIFICATIONS at 25° C Part Number 2771J Turns Ratio ± 2% 1CT : 1.25 Primary Inductance* mH min

117L7

Abstract: 2e22 6JV6 6BM8 12EC8 6au5gt 6HF5 6GH8A 6HB5 12U7
Contextual Info: TUNS-SOL TECHNICAL DATA TUNG-SOL ELECTRON TUBES TUNG-SOL ELECTRIC INC. ELEC TR O N T U B E DIVISIO N NEW ARK, N. }. U. S. A. PL ATE 275r OCT. 1 1951 C O P Y R IG H T 1 9 0 1 BY T U N O - S O L E L EC TR IC IN C . E L E C T R O N IC T U B E D IV ISIO N N E W A R K . N E W J E R S E Y . U . S. A.

2778B

Abstract: FUSE 0300
Contextual Info: MODEM MAGNETICS Global V.90 and V.34 Transformers • Intended for use in high-speed modem applications • Features very low interwinding capacitance, wellisolated windings, and low total harmonic distortion • Qualified per Bellcore TR-TSY-000357-1 TM00403