TR 30 F 124 Search Results

FD-24K

Abstract: FD123 arco capacitors ARCO Mica capacitors F0752 SCDM ARCO 36KJ RS-153 a10u
Contextual Info: Dipped Mica Capacitors Part Number Construction DM 15 Type’ Size2 1. 2. 3 TR 510 Packaging6 Capacitance3 Tolerance4 Type: DM Size: 05, 10; 15; 19; 20; 30 Capacitance: The first two digits are significant, the last digit indicates the number of zeros. Tolerance: D=t0.5pF; E=±1/2%; F=±1%;

z 141.005

Contextual Info: REVISION AY FIG. 1 PATENT NUMBER 7172438 -08: 8 ROW SEAM-30-02.0-XX-08-1-A-XX-K-TR SHOWN (SOME CENTER FEATURES, INCLUDING -K, NOT SHOWN FOR CLARITY) DO NOT SCALE FROM THIS PRINT "B" PIN 01 .0500 1.270 (TYP) 'F" (REF) "H" REF (TYP) "A" CL C "E" (REF) *-10,*-15,*-19 -20,

Westinghouse gold line

Abstract: MARKING W4 sot 23 westinghouse 218
Contextual Info: 91D 7294621 POWEREX INC P0ÜJEREX INC 01925 D T l 7 “ - ¿ S ' - à .3 D D D n S S 1 f '3" . * - ^ F u ll t- -¿ ^ C o n tr o l C u rren t Rating V o lta g e Ratings 34-49 Amps 400-1200 Volts Type Elee. Data Pg. 29 Mech. Data Pg. 30-31 N um b e r 104-160 Amps

TLY211

Abstract: PJ-55 AY2651K AY3822K AY4523K-5 AY5351K AY7351K MAY3373K MAY4364K MPY3373K
Contextual Info: ff ñ r, tt. t 2 0\á * * ' r „ = 25‘C 1 it S * ;î s AY3822K 19 s V - •deg ! Ar * i5 130 580 AY5351K * te 140 580 PY5351K *ÍÉ 140 A Y 4523K-5 ft ^ ^ 11 Vf I,. mA i 'V i /, ■:mAi '■7 ', = 25"C| « tr-f HPiUiMiUrp [y Wi VH im A m 20 2.1 20 30

Contextual Info: m LIG H T EM ITTING DIODE LED EL EC TR IC A L C H A R A C TERISTICS (Ta=25°C) MAXIMUM R A TIN G S (Ta=25°C) M ATERIA L (V) (mW) (°C) t°C) (V) 25 4 Vr >F K LR 102 GaP 2.1 75 -2 0 -7 5 -3 0 -1 0 0 (mA) (uA ) (V) 20 (5) 4 GaP 30 4 80 -2 0 -7 5 -3 0 -1 0 0

K713

Abstract: 2X40 TBW7/8000
Contextual Info: TBW7/8000 6960 W ATER C O O LED R.F. P O W ER TR IO D E QUICK REFERENCE DATA F re q . MHz 10 30 6 Va (kV) W0 (kW) 6 .5 6 .0 5 .0 9 .5 8 .5 7 .1 50 B m od. *) C o sc. C te le g r. X (m) Va (kV) 6 .0 W0 (kW) Va (kV) W0 (kW) 7 .0 5 .0 4 .0 9 .0 20 ' 7.1 6 .0

TM100SZ-M

Abstract: 30175
Contextual Info: TM100SZ-M t m m w z & : mm '• 1111 K.Í 1 1_J Ki 1 o 0 1 1, 11 1 .!. ^ - ,- — A 1 1 3-124 $S te 0 . 6.5 Ka cÑ¡ < 5o CO 1 30175 < tM y x n v i - i l / > TM100SZ-M 4 a E Ä — A ftffl IE

ha7070

Contextual Info: H ig h P c rfo rm .iiK r « 1 CMOSSRAM \ S 7 1(1241 A | l ou pnvw T I28K X 8 \ S 7 ( ’ I02411 CM O S SR A M ( ('lim in o li I/ O Advance information Features • O r g a n iz a t io n : 1 3 1 , 0 7 2 w o r d s x 8 b its • E asy m e m o r y e x p a n s i o n w i t h C E I , C E 2 a n d O E in p u t s

Contextual Info: TIMING DIAGRAM INDEX 5V Unbuffered DIMM H Y M 564 124 A R . 1 M x64 EDO 1M x16 b a s e d HYM 572A124AR . 1 M x72 EDO 1M x16 b a s e d E D O T IM IN G D IA G R A M - I E D O T IM IN G D IA G R A M - I H YM 5G 4224A R .

Semikron SKM 145 GB 124 DN

Abstract: skm 40 gb 124 d M145GB124DN LB 124 transistor the calculation of the power dissipation for the igbt and the inverse diode in circuits
Contextual Info: SKM 145 GB 124 DN . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1

PL75 twinax

Abstract: raychem cable
Contextual Info: RED WDÍCATES OTCTML TABLE 1 CABLES ACCOMMODATED TRC-50-2 -7 TRC-75-2 -8 8227, BELDEN TWC-782 -9 T WC - 124-2 -A9 BL 7 8 2, TI MES BL 9 8 2, TI ME S B L 1242, T I ME S -10 RG-22 7 5 4 E , AT&T 760A, AT&T -II I 6P EV L, AT&T -1 2 V 1-A L, GENERAL -1 3 T R F - 5 9 , TI ME S

skm 195 gb 125 dn

Abstract: SKM 400 gal 124 IGBT SEMIKRON skm 40 gb 124 d tr 30 f 124
Contextual Info: SKM 195 GB 124 DN . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1

2SK1155

Abstract: 2SK1156 DSA003638
Contextual Info: 2SK1155, 2SK1156 Silicon N-Channel MOS FET ADE-208-1247 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter

2SK1157

Abstract: 2SK1158 DSA003638
Contextual Info: 2SK1157, 2SK1158 Silicon N-Channel MOS FET ADE-208-1248 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver

Contextual Info: External dimensions Unit : mm RPI-124 Photointerrupter, Ultraminiature type Through hole 3 4 (bottom) 4-φ 0.8 Absolute maximum ratings (Ta=25°C) Forward current IF 50 mA Reverse voltage VR 5 V Power dissipation PD 80 mW Collector-emitter voltage VCEO 30

Contextual Info: External dimensions Unit : mm RPI-124 Photointerrupter, Ultraminiature type Through hole 3 4 (bottom) 4-φ 0.8 Absolute maximum ratings (Ta=25°C) Forward current IF 50 mA Reverse voltage VR 5 V Power dissipation PD 80 mW Collector-emitter voltage VCEO 30

M67711

Contextual Info: MITSUBISHI RF POWER MODULE M67711 1240-1300MHz, 12.5V, 16W, FM MOBILE RADIO P IN : P in RF ©VCCI 1 s t. D C S U P P L Y IN P U T @ VBB BASE VCC2 2nd. DC B IA S © Po RF O U T P U T ®G ND F IN DC SUPPLY SUPPLY ABSOLUTE MAXIMUM RATINGS Tc = 25 “C unless otherwise noted

2sk1151

Abstract: Hitachi DSA0014
Contextual Info: 2SK1151 L (S), 2SK1152(L)(S) Silicon N-Channel MOS FET ADE-208-1245 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter

Hitachi DSA00276

Contextual Info: 2SK740 Silicon N-Channel MOS FET ADE-208-1242 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver

Contextual Info: E13C7F2F-124.400M TR RoHS Pb E13C7 F 2 F -124.400M TR Series RoHS Compliant Pb-free 3.3V 6 Pad 5mm x 7mm Ceramic SMD LVPECL Oscillator Packaging Options Tape & Reel Frequency Tolerance/Stability ±20ppm Maximum over 0°C to +70°C Duty Cycle 50 ±5(%) Nominal Frequency

rca 17556

Abstract: 17556 power amplifier transistor 17556 17556 transistor 17556 SOLID STATE 17556 17556 RCA 17556 transistor rca 17556 BD801 BD795
Contextual Info: QÎ 3875081 G E . File Num bei' SOLID STATE DE | 3 f l 7 S G f l l □017554 B | ~ 01E 1242 17554 D f-S y-// BD795, BD796, BD797, BD798, BD799, BD800, BD801, BD802 Epitaxial-Base, Silicon . N-P-N and P-N-P VERSAWATT Transistors TERMINAL DESIGNATIONS G e n e ra l-P u rp o s e M e d iu m -P o w e r T y p e s fo r

5SYA2020

Abstract: tc 106-10
Contextual Info: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 2800 793 1246 10.6x103 1.024 0.51 V A A A V mΩ Phase Control Thyristor 5STP 08D2801 Doc. No. 5SYA1060-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications

Contextual Info: SKM 600 GA 124 D Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 60068-1

Contextual Info: External dimensions Unit : mm RPI-124 Photointerrupter, Ultraminiature type Through hole 3 4 (bottom) 4-φ 0.8 Absolute maximum ratings (Ta=25°C) Forward current IF 50 mA Reverse voltage VR 5 V Power dissipation PD 80 mW Collector-emitter voltage VCEO 30