TPN2010FNH Search Results
TPN2010FNH Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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TPN2010FNH |
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Japanese - Transistors - Mosfets | Original | 336.46KB | 9 | ||
TPN2010FNH |
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Transistors - Mosfets | Original | 234.98KB | 9 | ||
TPN2010FNH,L1Q |
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FETs - Single, Discrete Semiconductor Products, MOSFET N CH 250V TSON | Original | 9 |
TPN2010FNH Price and Stock
Toshiba America Electronic Components TPN2010FNH,L1QMOSFET N-CH 250V 5.6A 8TSON |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TPN2010FNH,L1Q | Digi-Reel | 14,222 | 1 |
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TPN2010FNH,L1Q | Reel | 16 Weeks | 5,000 |
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TPN2010FNH,L1Q | 4,267 |
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Toshiba America Electronic Components TPN2010FNH,L1Q(MTrans MOSFET N-CH Si 250V 9.9A 8-Pin TSON EP Advance T/R |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TPN2010FNH,L1Q(M | 5,150 | 123 |
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TPN2010FNH,L1Q(M | Cut Tape | 2,241 | 5 |
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TPN2010FNH,L1Q(M | Cut Tape | 5,150 | 0 Weeks, 1 Days | 5 |
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TPN2010FNH,L1Q(M | 23 Weeks | 5,000 |
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Toshiba America Electronic Components TPN2010FNHL1QMMOSFET SILICON N-CHANNEL MOS (U-MOS VIII-H) Small Signal Field-Effect Transistor, 5.6A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TPN2010FNHL1QM | 1,669 |
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TPN2010FNH Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TPN2010FNH MOSFET シリコンNチャネルMOS形 U-MOS-H TPN2010FNH 1. 用途 • 高効率DC-DCコンバータ用 • スイッチングレギュレータ用 2. 特長 (1) スイッチングスピードが速い。 (2) ゲート入力電荷量が小さい。: QSW = 2.6 nC (標準) |
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TPN2010FNH | |
Contextual Info: TPN2010FNH MOSFETs Silicon N-channel MOS U-MOS-H TPN2010FNH 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 168 mΩ (typ.) (VGS = 10 V) |
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TPN2010FNH | |
Contextual Info: TPN2010FNH MOSFETs Silicon N-channel MOS U-MOS-H TPN2010FNH 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 168 mΩ (typ.) (VGS = 10 V) |
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TPN2010FNH | |
gt50jr22
Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
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SCE0024G gt50jr22 fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W |