TP5650N Search Results

TP5650N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TP5660 Abstract: TP5650 TP5650N Contextual Info: 2-38 TP5650/TP5660 Supply Voltage VDD - Vss Maximum Voltage at Any Other Pin 13V Operating Temperature (TA) Storage Temperature Maximum Power Dissipation VDD + 0.3V to Vs s -0 .3 V -3 0 °C to + 6 0 °C -5 5 °C to + 1 5 0 °C 500 mW Electrical Characteristics 2.5V<VDD< 10V, unless otherwise specified, Ta within operating temperature range	OCR Scan	tp5650/tp5660 tp5700 tp5660 tp5650 +1tp5650n	PDF
transistor 1pv Contextual Info: TP5650, TP5660 PRELIMINARY CT\| National É æ Semiconductor TP5650, TP5660 Ten-Number Repertory DTMF Generators General Description Features The TP5650 and TP5660 are m onolithic integrated circuits built using National’s advanced P2CMOS process double poly-sillcon gate CMOS . They interface directly to	OCR Scan	tp5650 tp5660 tp5600 transistor 1pv	PDF

Catalog Datasheet

Type

Document Tags

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TP5660

Abstract: TP5650 TP5650N
Contextual Info: 2-38 TP5650/TP5660 Supply Voltage VDD - Vss Maximum Voltage at Any Other Pin 13V Operating Temperature (TA) Storage Temperature Maximum Power Dissipation VDD + 0.3V to Vs s -0 .3 V -3 0 °C to + 6 0 °C -5 5 °C to + 1 5 0 °C 500 mW Electrical Characteristics 2.5V<VDD< 10V, unless otherwise specified, Ta within operating temperature range

OCR Scan

tp5650/tp5660 tp5700 tp5660 tp5650 +1

PDF

transistor 1pv

Contextual Info: TP5650, TP5660 PRELIMINARY CT| National É æ Semiconductor TP5650, TP5660 Ten-Number Repertory DTMF Generators General Description Features The TP5650 and TP5660 are m onolithic integrated circuits built using National’s advanced P2CMOS process double poly-sillcon gate CMOS . They interface directly to

OCR Scan

tp5650 tp5660 tp5600 transistor 1pv

PDF