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Contextual Info: MOTOROLA O rder this docum ent SEMICONDUCTOR TECHNICAL DATA by TP29N15E/D Product Preview M TP29N15E TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0-07 OHM This advanced TM O S E -F E T is designed to w ithstand high

Contextual Info: MOTOROLA Order this document by TP29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview M TP29N15E TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy