TP28F010 Search Results

TP28F010 Datasheets (3)

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Intel

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TP28F010-120		Intel	28F010 1024K (128K x 8) CMOS FLASH MEMORY	Original	PDF	907.77KB	33
TP28F010-150		Intel	28F010 1024K (128K x 8) CMOS FLASH MEMORY	Original	PDF	907.77KB	33
TP28F010-90		Intel	28F010 1024K (128K x 8) CMOS FLASH MEMORY	Original	PDF	907.77KB	33

TP28F010 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
28F010 Abstract: TN28F010 N28F010-120 TN28F010-120 1N914 80C186 tn28f010-150 PLCC pin configuration 80c186 29020 Contextual Info: E 28F010 1024K 128K X 8 CMOS FLASH MEMORY 8 n n n n n n n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  2 Second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% V PP	Original	28f010 1024k 32-pin 32-lead +11e28f010-90 n28f010-90 e28f010-120 n28f010-120 tn28f010 tn28f010-120 1n914 80c186 tn28f010-150 plcc pin configuration 80c186 29020	PDF
PPH 2222 36 Abstract: 29f020 P28F010-150 29020 28F010-150N 28f010 Contextual Info: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface	OCR Scan	28f010 28f020 32-lead 28f010-90 +828f010-120 28f010-150 28f020-90 pph 2222 36 29f020 p28f010-150 29020 28f010-150n	PDF
29F020 Abstract: 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 28F010 80C186 E28F010 N28F010 Contextual Info: E 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 n n n n n n n Flash Electrical Chip-Erase  1-Mbit: 1 Second Typical Chip-Erase  2-Mbit: 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  1-Mbit: 1 Second Chip-Program	Original	28f010 28f020 32-lead p28f010-90 +14p28f010-120 p28f010-150 tn28f010-90 tn28f010-120 tn28f010-150 tp28f010-90 29f020 tn28f010 intel 28f010 n28f010-120 n28f020-150 80c186 e28f010 n28f010	PDF
Contextual Info: 28F010 1024K 128K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 [is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp	OCR Scan	28f010 1024k 32-pin 32-lead	PDF
29F020 Abstract: 28F010 28F020 80C186 E28F010 N28F010 P28F010 29020 Contextual Info: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/M icrocontroller Compatible Write Interface	OCR Scan	28f010 28f020 32-pin 32-lead +11e28f010-90 n28f010-90 e28f010-120 e28f010-150 te28f010-90 29f020 80c186 e28f010 n28f010 p28f010 29020	PDF
TN28F010-120 Abstract: 28F010 N28F010-120 TN28F010 intel 28F010 1N914 80C186 n28f010-150 TP28F010 Contextual Info: E 28F010 1024K 128K X 8 CMOS FLASH MEMORY 8 n n n n n n n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  2 Second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% V PP	Original	28f010 1024k 32-pin 32-lead +11e28f010-90 n28f010-90 e28f010-120 n28f010-120 tn28f010-120 tn28f010 intel 28f010 1n914 80c186 n28f010-150 tp28f010	PDF