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STMicroelectronics


STMicroelectronics STP11NM80 MOSFETs N-Ch 800 Volt 11 Amp Power MDmesh
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	STP11NM80		1,982			1 $4.03 10 $3.13 100 $3.09 1000 $2.87 10000 $2.85	Buy Now
Win Source Electronics	STP11NM80		3,070			1 - 10 - 100 $2.93 1000 $2.62 10000 $2.62	Buy Now
STMicroelectronics STP11NK40Z MOSFETs N-Ch 400 Volt 9 Amp Zener SuperMESH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	STP11NK40Z		1,484			1 $2.64 10 $0.84 100 $0.84 1000 $0.84 10000 $0.81	Buy Now
STMicroelectronics STP11NK40ZFP MOSFETs N-Ch, 400V-0.49ohms Zener SuperMESH 9A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	STP11NK40ZFP		1,317			1 $2.88 10 $1.14 100 $1.11 1000 $1.00 10000 $1.00	Buy Now
STMicroelectronics STP11NM60FD MOSFETs N-Ch 600 Volt 11 Amp
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	STP11NM60FD		964			1 $4.40 10 $2.96 100 $2.92 1000 $2.45 10000 $2.38	Buy Now
STMicroelectronics STP11N65M2 MOSFETs N-channel 650 V, 0.60 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220 package
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	STP11N65M2		889			1 $2.38 10 $1.28 100 $1.05 1000 $0.77 10000 $0.67	Buy Now

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TP11N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TP11NB40 TP11NB40FP N - CHANNEL 400V - 0.48ÎÎ - 1 0.7A - T0-220/T0-220FP PowerMESH MOSFET TYPE V dss R D S o n Id S TP11N B40 S T P 1 1 N B 4 0F P 400 V 400 V < 0.5 5 Q. < 0.5 5 Q, 1 0 .7 A 6.0 A • . . . . TYPICAL RDS(on) = 0.48 £1 EXTREMELY H IG H dV /dt CAPABILITY	OCR Scan	STP11NB40 STP11NB40FP T0-220/T0-220FP TP11N STP11NB40/FP O-22QFP	PDF
G11N120CN Abstract: g11n120 11n120 Contextual Info: HGTG11N120CN, TP11N120CN, HGT1S11N120CNS Semiconductor A p rii 1999 D a ta S h e e t 43A, 1200V, NPT Series N-Channel IGBT Features The H GTG11N120CN, H G TP11N120CN, and HGT1S11N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high	OCR Scan	HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS GTG11N120CN, TP11N120CN, HGT1S11N120CNS 1-800-4-HARRIS G11N120CN g11n120 11n120	PDF
TP11N Abstract: T0220F Contextual Info: TP11NB40 TP11NB40FP N - CHANNEL 400V - 0.48Q - 10.7A - T0-220/T0-220FP PowerMESH MOSFET TYPE V dss RDS on Id STP11 N B40 S TP11N B40FP 400 V 400 V < 0 .5 5 Q < 0 .5 5 Q 1 0 .7 A 6.0 A . TYPICAL RDS(on) = 0.48 Q EXTREMELY HIGH dV/dt CAPABILITY . 100% AVALANCHE TESTED	OCR Scan	STP11NB40 STP11NB40FP T0-220/T0-220FP STP11 TP11N B40FP T0220F	PDF
G11N120CN Contextual Info: HGTG11N120CN, TP11N120CN, HGT1S11N120CNS S em iconductor A p rii 1999 D ata S h eet 43A, 1200V, NPT Series N-Channel IGBT 43A, 1200V, T C = 25°C The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor	OCR Scan	HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS GTG11N120CN, TP11N120CN, HGT1S11N120CNS O-263AB G11N120CN	PDF