TP010 Search Results

TP0101T

Abstract: TP0101TS
Contextual Info: TP0101T/TS Vishay Siliconix P-Channel 20-V D-S MOSFET, Low-Threshold PRODUCT SUMMARY ID (A) rDS(on) (W) TP0101T TP0101TS 0.65 @ VGS = –4.5 V –0.6 –1.0 0.85 @ VGS = –2.5 V –0.5 –0.9 VDS (V) –20 FEATURES BENEFITS APPLICATIONS D D D D D D D D

Contextual Info: TP0102N3 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)500m @Temp (øC)150õ IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55

TP0101K

Contextual Info: SPICE Device Model TP0101K Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

TP0101K

Abstract: TP0101K-T1-E3 83053
Contextual Info: TP0101K Vishay Siliconix P-Channel 20-V D-S MOSFET, Low-Threshold FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • ESD Protected: 3000 V (A)e 0.65 at VGS = - 4.5 V

TP0101K

Abstract: TP0101K-T1-E3
Contextual Info: TP0101K Vishay Siliconix New Product P-Channel 20-V D-S MOSFET, Low-Threshold FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3000 V PRODUCT SUMMARY VDS (V) −20 20 rDS(on) (W) ID (A) 0.65 @ VGS = −4.5 V −0.58 0.85 @ VGS = −2.5 V −0.5 APPLICATIONS

Contextual Info: TP0101K Vishay Siliconix P-Channel 20-V D-S MOSFET, Low-Threshold FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • ESD Protected: 3000 V (A)e 0.65 at VGS = - 4.5 V

Contextual Info: TP0101K Vishay Siliconix New Product P-Channel 20-V D-S MOSFET, Low-Threshold FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3000 V PRODUCT SUMMARY VDS (V) −20 20 rDS(on) (W) ID (A) 0.65 @ VGS = −4.5 V −0.58 0.85 @ VGS = −2.5 V −0.5 APPLICATIONS

TP0101T

Contextual Info: TP0101T P-Channel Enchancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.65 @ VGS = –4.5 V –0.5 0.85 @ VGS = –2.5 V –0.4 TO-236 (SOT-23) G 1 3 S D 2 Top View TP0101T (P0)* *Marking Code for TO-236 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

TP0101K

Abstract: 51 058 04.3
Contextual Info: SPICE Device Model TP0101K Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: TP0104N2 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)900 @Temp (øC)150õ IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)3.5# Minimum Operating Temp (øC)-55

TP0102N3

Abstract: TP0102 TP0104 TP0104N8 mos die TP0104N3 TP0102ND TP0104N2 TP0104ND
Contextual Info: TP0102 TP0104 E – TP0104 T E L O S B –O Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-39 TO-92 TO-243AA* Die† -20V 4.0Ω -2.4V -0.85A

Contextual Info: - i l m m m w * vtu u t/u m I r , ZJ r r • : TP0102 TP0104 g mm\ « « « Low Threshold _ ip* wm m m rm w»" 'iniini tm m tfffm P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information bv dss/ Order Number / Package ^DS ON ^GS(th) ^D(ON) b v dgs

Contextual Info: TP0104N3 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)500m @Temp (øC)150õ IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55

TP0101K-T1-E3

Abstract: TP0101K
Contextual Info: TP0101K Vishay Siliconix New Product P-Channel 20-V D-S MOSFET, Low-Threshold FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3000 V PRODUCT SUMMARY VDS (V) −20 20 rDS(on) (W) ID (A) 0.65 @ VGS = −4.5 V −0.58 0.85 @ VGS = −2.5 V −0.5 APPLICATIONS

AN609

Abstract: TP0101K
Contextual Info: TP0101K_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: TP0104N8 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)1.0 @Temp (øC)150õ IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.6# Minimum Operating Temp (øC)-55

ic ds 2020

Contextual Info: Tem ic TPOIOIT/TS S e m i c o n d u c t o r s P-Channel Enchancement-Mode MOSFET Product Summary I d A V d s (V ) TP0101T *DS(on) (Q ) TP0101T (PO)* TP0101TS (PS)* ♦Marking Code for TO-236 TP0101TS D 0.65 @ VGS = -4.5 V -0.6 -1.0 0.85 @ VGS = -2.5 V -0.5

74071

Abstract: TP0101T TP0101T-T1-E3 TP0101K TP0101K-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix TP0101K vs. TP0101T Description: P-Channel, 20 V D-S MOSFET, Low Threshold Package: SOT-23 Pin Out: Identical Part Number Replacements: TP0101K-T1-E3 Replaces TP0101T-T1-E3 TP0101K-T1 Replaces TP0101T-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

TP0101T

Abstract: TP0101TS
Contextual Info: TP0101T/TS P-Channel Enchancement-Mode MOSFET TO-236 SOT-23 Product Summary ID (A) rDS(on) (W) W TP0101T TP0101TS 0.65 @ VGS = –4.5 V –0.6 –1.0 0.85 @ VGS = –2.5 V –0.5 –0.9 VDS (V) –20 Top View G 1 3 S 2 D TP0101T (P0)* TP0101TS (PS)* *Marking Code for TO-236

Contextual Info: TP0101K Vishay Siliconix P-Channel 20-V D-S MOSFET, Low-Threshold FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • ESD Protected: 3000 V (A)e 0.65 at VGS = - 4.5 V

TP0101TS

Abstract: TP0101T
Contextual Info: TP0101T/TS Vishay Siliconix P-Channel 20-V D-S MOSFET, Low-Threshold PRODUCT SUMMARY ID (A) rDS(on) (W) TP0101T TP0101TS 0.65 @ VGS = –4.5 V –0.6 –1.0 0.85 @ VGS = –2.5 V –0.5 –0.9 VDS (V) –20 FEATURES BENEFITS APPLICATIONS D D D D D D D D

TP0104N3

Abstract: TP0104 TP0104N8 TP0104ND
Contextual Info: TP0104 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-92 TO-243AA* Die† -40V 4.0Ω -2.4V -0.85A TP0104N3 TP0104N8 TP0104ND * Same as SOT-89.

Contextual Info: TP0102 TP0104 SuperH E X in c . _ Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs f*DS ON| V (max (max) If Ordering Information -20V 4.o n -2.4V -40V 4.0Î2 -2.4V bC g s (wi| Order Number / Package TO-39 TO-92 TO-243AA* Diet

TP0101t

Abstract: TP0101TS
Contextual Info: TP0101T/TS Vishay Siliconix P-Channel 20-V D-S MOSFET, Low-Threshold PRODUCT SUMMARY Id (A) VDS(V) -2 0 r D S (o n) (£2) TP0101T TP0101TS 0.65 e V GS = -4 .5 V -0 .6 -1 .0 0.85 a V qs = -2 .5 V -0 .5 -0 .9 FEATURES BENEFITS APPLICATIONS • • • •