TP 9386 Search Results

10YQ045

Contextual Info: PD -93860 10YQ045 SCHOTTKY RECTIFIER 10 Amp Description/Features Major Ratings and Characteristics Characteristics 10YQ045 Units IF AV Rectangular waveform 10 A VRRM 45 V IFSM @ tp = 8.3ms sine 110 A VF @ 10Apk, TJ = 125°C 0.70 V -55 to 150 °C TJ,Tstg Operating and

Contextual Info: PD - 93860A 10YQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 10 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 10YQ045 Units IF AV 10 A VRRM 45 V 110 A 0.70 V IFSM @ tp = 8.3ms half-sine VF @ 10Apk, TJ =125°C TJ,Tstg Operating and storage -55 to 150

ST6114

Abstract: ST6114 VALOR pulse pe-68517 valor st6114 Direct Replacement National EIA/TIA 568 B EIA/TIA 568 C pe-68517 XWM8045ACFN XWM8045ECFN
Contextual Info: WM8045 Advance Information August 1997 Rev.2.1 Twisted Pair Transceiver for 100BASE-TX, TP-FDDI and ATM-155Mb/s Description Features WM8045 is a high performance monolithic transceiver circuit that operates between a physical layer controller and the analogue signals present on twisted pair cable

7476 truth table

Abstract: 7474 truth table fairchild 9322 se 9315-1 signetics 8281 7474 equivalent 9N73/7473 82S62 signetics 8235 93178
Contextual Info: SELECTOR GUIDE/FUNCTIONAL INDEX MSI MULTIPLEXERS Function Type No. Enable Input Comple­ mentary O u tp ut 9322 93L22 Dual 4 -Input 9309 93L09 93153 X X X X Single 8 -In p u t 9312 93L12 93S12 9313 93151 93152 X X X X X X 93150 X X X X X X X Page No. Data Z

9386DC

Abstract: 9386DM 9386FC 9386FM 9386PC
Contextual Info: 86 Dl 9386 10 & . c > C O N N E C T IO N D IA G R A M S P IN O U T A Ao [ 7 T il vcc 4 -B IT Q U A D E X C LU S IV E -N O R Bo [ T W ] A3 (W ith O p e n -C o lle c to r Outputs O o [T 12] B3 Ö -: O i[T iT jO s Bi [ T TÖ102 Ai ( T GND [ 7 D E S C R IP T IO N — T he '8 6 co n sists of fo u r in d e p e n d e n t E xclu sive -N O R gates

Fairchild TTL

Abstract: 9386 ScansUX990 schematic diagram AND gates fairchild 9386
Contextual Info: TTL/MSI 9386 4-BIT QUAD EXCLUSIVE-NOR D E S C R IP T IO N — The 9 3 8 6 consists of four independent Exclusive-N O R gates with open collector outputs. Single 1-bit comparisons may be made with each gate, or multiple bit com parisons may be made by connecting the outputs of the four gates together. Typical power dissipation is 1 70 mW.

10YQ045

Contextual Info: PD - 93860A 10YQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 10 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 10YQ045 Units IF AV 10 A VRRM 45 V 110 A 0.70 V The 10YQ045 Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel

IRHE53Z30

Abstract: IRHE54Z30 IRHE57Z30 IRHE58Z30 LCC-18
Contextual Info: PD - 93863A RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 IRHE57Z30 30V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHE57Z30 100K Rads (Si) IRHE53Z30 300K Rads (Si) RDS(on) 0.07Ω 0.07Ω ID 12A 12A IRHE54Z30 600K Rads (Si)

IRHE53Z30

Abstract: IRHE54Z30 IRHE57Z30 IRHE58Z30 LCC-18
Contextual Info: PD - 93863B RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 IRHE57Z30 30V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHE57Z30 100K Rads (Si) IRHE53Z30 300K Rads (Si) RDS(on) 0.07Ω 0.07Ω ID 12A 12A IRHE54Z30 600K Rads (Si)

Contextual Info: PD - 93863C IRHE57Z30 JANSR2N7494U5 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 REF: MIL-PRF-19500/700 5 Product Summary Part Number IRHE57Z30 IRHE53Z30 TECHNOLOGY ™ Radiation Level RDS(on) 100K Rads (Si) 0.07Ω 300K Rads (Si) 0.07Ω

Contextual Info: PD - 93863E IRHE57Z30 JANSR2N7494U5 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 REF: MIL-PRF-19500/700 5 Product Summary Part Number IRHE57Z30 IRHE53Z30 TECHNOLOGY ™ Radiation Level RDS(on) 100K Rads (Si) 0.07Ω 300K Rads (Si) 0.07Ω

Contextual Info: PD - 93863 RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 IRHE57Z30 30V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHE57Z30 100K Rads (Si) IRHE53Z30 300K Rads (Si) RDS(on) 0.07Ω 0.07Ω ID 12A 12A IRHE54Z30 600K Rads (Si)

IRHE53Z30

Abstract: IRHE54Z30 IRHE57Z30 IRHE58Z30 JANSR2N7494U5 LCC-18
Contextual Info: PD - 93863E IRHE57Z30 JANSR2N7494U5 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 REF: MIL-PRF-19500/700 5 Product Summary Part Number IRHE57Z30 IRHE53Z30 TECHNOLOGY ™ Radiation Level RDS(on) 100K Rads (Si) 0.07Ω 300K Rads (Si) 0.07Ω

IRHE53Z30

Abstract: IRHE54Z30 IRHE57Z30 IRHE58Z30 JANSR2N7494U5 LCC-18 120 V dc motor drive circuit
Contextual Info: PD - 93863D IRHE57Z30 JANSR2N7494U5 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 REF: MIL-PRF-19500/700 5 Product Summary Part Number IRHE57Z30 IRHE53Z30 TECHNOLOGY ™ Radiation Level RDS(on) 100K Rads (Si) 0.07Ω 300K Rads (Si) 0.07Ω

AN-994

Abstract: IRFR2405 IRFU2405 DSA0030910
Contextual Info: PD - 93861 IRFR2405 IRFU2405 Surface Mount IRFR2405 l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.016Ω G Seventh Generation HEXFET® Power MOSFETs from

Contextual Info: PD -93862 IRFR2407 IRFU2407 Surface Mount IRFR2407 l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS(on) = 0.026Ω G Seventh Generation HEXFET® Power MOSFETs from

AN-994

Abstract: IRFR2407 IRFU2407
Contextual Info: PD -93862 IRFR2407 IRFU2407 Surface Mount IRFR2407 l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS(on) = 0.026Ω G Seventh Generation HEXFET® Power MOSFETs from

IRFU N-Channel Power MOSFETs

Abstract: IRFR2407 AN-994 IRFU2407
Contextual Info: PD -93862 IRFR2407 IRFU2407 Surface Mount IRFR2407 l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS(on) = 0.026Ω G Seventh Generation HEXFET® Power MOSFETs from

AN-994

Abstract: IRFR2405 IRFU2405
Contextual Info: PD - 93861 IRFR2405 IRFU2405 Surface Mount IRFR2405 l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.016Ω G Seventh Generation HEXFET® Power MOSFETs from

AN-994

Abstract: IRFR2405 IRFU2405
Contextual Info: PD - 93861 IRFR2405 IRFU2405 Surface Mount IRFR2405 l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.016Ω G Seventh Generation HEXFET® Power MOSFETs from

AN-994

Abstract: IRFR2407 IRFU2407
Contextual Info: PD -93862 IRFR2407 IRFU2407 Surface Mount IRFR2407 l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS(on) = 0.026Ω G Seventh Generation HEXFET® Power MOSFETs from

IRFR2407

Abstract: AN-994 IRFU2407
Contextual Info: 2002-04-02 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-171-53 IRFR2407 HEXFET D-Pak PD -93862 IRFR2407 IRFU2407 Surface Mount IRFR2407 l Straight Lead (IRFU2407)

dy 255

Abstract: 74s405 H R C M F 2J 225 Fairchild 9960 nixie driver 9614 line driver ci 8602 gn block diagram FJH211 Fairchild msi cul9960 variable frequency circuit diagram using IC 555
Contextual Info: IN THE, BOSTON - 6 17- 4 4 * A SUBSIDiA) ./ OF DUCOMMUN INCORPOfiATED S, MASS vw . JU N E 1 97 S Fairchild Semiconductor TTL Data Book Contents And Section Selector If you know the correct 5400, 7400, 9300 or 9600 device type number, find the correct page in the

sim 6930

Abstract: T9015 cy 6935 ba2 code
Contextual Info: H O LTE K H r HT9015 RF Single Chip for Cordless Phone Features • • • • • O p e ra tin g voltage: 2.7V~6V E x trem e ly low pow er consum ption c u rre n t - Ic c = 0|iA typ. in b a tte ry -sa v in g m ode - Ic c = 7.5m A (typ.) in sta n d b y m ode