TP 220 BJT Search Results

Contextual Info: S510065-55Z S510065-55Z CATV Out-OfBand Tuner CATV OUT-OF-BAND TUNER Package: QFN 28 Product Description Features 28 GaAs HBT GaAs MESFET GND InGaP HBT NC SiGe BiCMOS NC Si BiCMOS  SiGe HBT GND GaAs pHEMT GND Si CMOS Vdd Si BJT GND GaN HEMT 27 26 25 24

S5100

Abstract: X6959M HZ0603 hz0603b102 epcos EC 90 11 O 97ag
Contextual Info: S510065-55Z S510065-55Z CATV Out-OfBand Tuner CATV OUT-OF-BAND TUNER Package: QFN 28 Product Description Features 28 GaAs HBT GaAs MESFET GND InGaP HBT NC SiGe BiCMOS NC Si BiCMOS SiGe HBT GND GaAs pHEMT GND Si CMOS Vdd Si BJT GND GaN HEMT 27 26 25 24 23 GND VID

Contextual Info: KFM RF2906 | Preliminary MICRO-DEVICES 4 3 3 M H Z PSK/FSK/ASK DATA TRANSCEIVER Typ ical A p plications • Wireless Meter Reading • W ireless Data Transceiver • Keyless Entry Systems • 4 3 3 MHz European ISM Band Equipment • Remote Controls • Battery Powered Portable Devices

Si3215-FM

Abstract: 31353R-02 SO16E Package Silabs CMR1U-02M fsync in PCM js1 sot23 SO16E DB15F JS3 SOT23
Contextual Info: Si321xPPQx-EVB EVALUATION BOARD FOR THE Description S i 3 2 1 0 / 1 5 / 1 6 P RO SLIC  This document describes the operation of the Silicon Laboratories ProSLIC® device evaluation platform. The devices supported by this document are the Si3210/15/ 16 and Si3210M/15M/16M; both Si3201 and discrete

Si3215-FM

Abstract: si3201-FS SI3210M-FM 31353R-02 TDK NLC322522T-470K si3210-fm Si3216-FM intl PC MOTHERBOARD CIRCUIT diagram CMR1U-02M Si3216
Contextual Info: Si321xPPQx-EVB EVALUATION BOARD FOR THE Description S i 3 2 1 0 / 1 5 / 1 6 P RO SLIC „ This document describes the operation of the Silicon Laboratories ProSLIC® device evaluation platform. The devices supported by this document are the Si3210/15/ 16 and Si3210M/15M/16M; both Si3201 and discrete

rX 433 N

Abstract: ift coil for transmitter TX 433 N rf traNsmitter receiver 433mhz OOK ASK receiver 433mhz rf traNsmitter receiver 433mhz 3v fm receiver using ift coil 433mhz transmitter ic schematics for a PA amplifier 433mhz chip antenna
Contextual Info: RF RF2915 Preliminary M ICRO-DEVICES 4 3 3 /8 6 8 /9 1 5 M H Z FSK /A SK /O O K T R A N S C E IV E R T y p ic a l A p p lic a t io n s • Wireless Meter Reading Wireless Data Transceiver • Keyless Entry Systems Wireless Security Systems • 433 MHz/868 MHz/915 MHz ISM Band

ZD832

Abstract: thermistor 1k ZD832EVB zt3222F zt3222 220vac LED driver TP 220 bjt zd832ley 220v led driver
Contextual Info: ZD832 TransformerFree AC-DC LED Driver Zywyn ZD832 Universal TransformerFree™ AC-DC Constant Current LED Driver Features General Description • AC to DC Constant Current Driver • No Transformer, No External Bridge Rectifier • Universal Input Voltage Range of 85VAC to 125VAC or

Android

Abstract: FT312D DS_FT312D
Contextual Info: DS_FT312D USB ANDROID HOST IC Datasheet Version 1.1 Document No.: FT_000816 Clearance No.: FTDI# 331 Future Technology Devices International Ltd. DS_FT312D USB Android Host IC The FT312D is a USB 2.0 Full Speed host IC specifically targeted at providing

C5100 MOSFET

Abstract: UC3842 smps design UC3842 step up converter flyback smps uc3845 UC3842 smps project AN1889 SMPS CIRCUIT DIAGRAM UC3842 pcb design on uc3842 transistor c5100 NF-2000
Contextual Info: AN1889 Application note ESBT STC03DE170HV in 3-phase auxiliary power supply Introduction The need to choose a high value of the fly-back voltage is well known to power supply designers when efficiency and high duty cycle become important requirements. Threephase auxiliary power supplies, starting from a bulk voltage of 750 V, require theoretically

Contextual Info: R F M MICRO-DEVICES RF2906 | Preliminary 4 3 3 M H Z PSK/FSK/ASK DATA TRANSCEIVER Typ ical A p plications • Wireless Meter Reading • W ireless Data Transceiver • Keyless Entry Systems • 4 3 3 MHz European ISM Band Equipment • Remote Controls • Battery Powered Portable Devices

Contextual Info: KFM RF2906 | Preliminary MICRO-DEVICES 4 3 3 M H Z PSK/FSK/ASK DATA TRANSCEIVER Typ ical A p plications • Wireless Meter Reading • W ireless Data Transceiver • Keyless Entry Systems • 4 3 3 MHz European ISM Band Equipment • Remote Controls • Battery Powered Portable Devices

Contextual Info: 2N7636-GA Normally – OFF Silicon Carbide Junction Transistor Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area

fairchild power bjt

Abstract: fjp2160d fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor
Contextual Info: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, HV Industrial Power Supplies • Motor Driver and Ignition Driver

Contextual Info: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • The FJP2160D is a low-cost, high performance power switch designed to provide the best performance when used in an ESBCTM configuration in applications such as: power supplies, motor drivers, Smart Grid, or ignition

Contextual Info: RFH RF9936 MICRO-DEVICES PCS LOW NOISE AM PLIFIER/M IXER T y p ic a l A p p lic a tio n s • CDM A/TDM A/DCS1900 PCS Systems • General Purpose Down Converter • PHS 1500/WLAN 2400 Systems • Micro-Cell PCS Base Stations • Receivers Employing Diversity Antennas

SM TX - 433

Contextual Info: RF RF2915 Preliminary 433/868/915MHZ FSK/ASK/OOK TRANSCEIVER MICRO DEVICES Typ ical A p plications • Wireless Meter Reading W ireless Data Transceiver • Keyless Entry Systems W ireless Security Systems • 433 MHz/868 M Hz/915 MHz ISM Band Battery Powered Portable Devices

300W HI FI AMPLIFIER

Abstract: L4998 flyback smps 300w T2A250V 220 volt double pole switch circuit diagram schematic smps 300W BCD60II L4990 L4990A bjt 2n2222 driver circuit
Contextual Info: - , k7 # . L4990 L4990A S G S -T H O M S O N R f f l D t g œ H I L I Ê 'î n S O R Ô D t g S PRIM ARY CO NTRO LLER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ . CURRENT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1MHz LOW START-UP CURRENT < 0.45mA

Scans-0017389

Abstract: ua90
Contextual Info: TETPOA TETRODE GENERAL OEIUHE CBEAEHHH BbixoflHOii jiyneBOH TeTpofl 211211 npeflHa3HaneH ana. ycHJieHHH m o iu h o cth h h 3koh nacTOTw. K aToa — oKCHflHbiH npaM oro HaKajia. Macca He 6ojiee 10 r. is The 211211 output beam tetrode has been designed to amplify low-frequency power.

L4998

Abstract: schematic smps 300W L4990 1N4148 ST TWT Wiring variac used as a battery charger BCD60II L4990A flyback smps battery charger design using ice STPS20100CT
Contextual Info: - , k7 # . L4990 L4990A S G S -T H O M S O N R f f l D t g œ H I L I Ê 'î n S O R Ô D t g S PRIM ARY CO NTRO LLER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ . CURRENT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1MHz LOW START-UP CURRENT < 0.45mA

Contextual Info: RF RF2945 Preliminary 433/868/915MHZ FSK/ASK/OOK TRANSCEIVER MICRO DEVICES Typ ical A p plications • Wireless Meter Reading • W ireless Data Transceiver • Keyless Entry Systems • W ireless Security Systems • 433,868 and 9 1 5 MHz ISM Band Systems

L4998

Abstract: b/w tv schematics smps circuit diagram of 300W variac used as a battery charger 12 VOLT 10 AMP smps circuit diagrams flyback smps 300w e cores transformer gate drive circuit for interleaved active clamp flyback forward converter L4990 btw 70.200 transistor ge c137
Contextual Info: T L4990 L4990A / PR IM AR Y C O N TR O LLER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ . CURRENT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1MHz LOW START-UP CURRENT < 0.45mA HIGH-CURRENT OUTPUT DRIVE SUITABLE FOR POWER MOSFET 1A FULLY LATCHED PWM LOGIC WITH DOU­

Contextual Info: FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features FDC655 MOSFET VCS(ON) IC Equiv. RCS(ON) 0.131 V 0.5 A 0.261 Ω(1) The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers,

c 945 TRANSISTOR equivalent

Abstract: FDC655 fairchild power bjt ignition drivers
Contextual Info: FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features FDC655 MOSFET VCS(ON) IC Equiv. RCS(ON) 0.131 V 0.5 A 0.261 Ω(1) The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers,

MK48TO2-12

Abstract: SRAM 6116 kick circuit drain mk48to MK48T12 MK48TO2 MK48T02 mostek 80 byte shift register 6116 sram
Contextual Info: IffiEEHSEll COMPONENTS MK48T02/12 B -12/15/20/25 yr~i 2K X 8 Z E R O P O W E R TIM E K E E P E R RAM MEMORY COMPONENTS FEATURES □ Integrated U ltra Low Power SR AM , Real Tim e Clock, Crystal, Power-fail C ontrol C ircu it and B attery A7 1 c 3 24 Vcc A.