TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE FT Search Results
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE FT Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| BLA1011-300 |
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BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| 93L422ADM/B |
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93L422A - 256 x 4 TTL SRAM |
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| 27S185DM/B |
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27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 |
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TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE FT Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
RN4605Contextual Info: TOSHIBA RN4605 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4605 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 1.6 • • • • + 0.2 - |
OCR Scan |
RN4605 RN4605 | |
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Contextual Info: TOSHIBA RN4988 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 • Including Two Devices in US6 (U ltra Super Mini Type |
OCR Scan |
RN4988 | |
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Contextual Info: TOSHIBA RN4986 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 (Ultra Super Mini Type |
OCR Scan |
RN4986 | |
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Contextual Info: TOSHIBA RN4985 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • 2.1 • Including Two Devices in US6 (Ultra Super Mini Type |
OCR Scan |
RN4985 | |
RN4603Contextual Info: TOSHIBA RN4603 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4603 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8 -0.3 1.6-0.1 + 0.2 • • • • |
OCR Scan |
RN4603 RN4603 | |
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Contextual Info: TOSHIBA RN4981 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 ±0.1 • Including Two Devices in US6 (U ltra Super Mini Type |
OCR Scan |
RN4981 | |
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Contextual Info: TOSHIBA RN4990 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RMlQOn SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 ±0.1 • Including Two Devices in US6 (U ltra Super Mini Type |
OCR Scan |
RN4990 | |
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Contextual Info: TOSHIBA RN4610 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4610 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 + 0.2 1 .6 - 0 .1 • • • |
OCR Scan |
RN4610 961001EAA2' | |
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Contextual Info: RN4991 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) R N AQQ1 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm 2.1 ±0.1 • Including Two Devices in US6 (Ultra Super Mini Type |
OCR Scan |
RN4991 | |
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Contextual Info: TOSHIBA RN4984 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 ± 0.1 • Including Two Devices in US6 (U ltra Super Mini Type |
OCR Scan |
RN4984 | |
RN4610Contextual Info: TOSHIBA RN4610 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4610 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 + 0.2 1 .6 - 0 .1 • • • |
OCR Scan |
RN4610 RN4610 | |
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Contextual Info: TOSHIBA RN4987 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) R M A Q ft 7 Unit in mm 2.1 ±0.1 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • • Including Two Devices in US6 (Ultra Super Mini Type |
OCR Scan |
RN4987 | |
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Contextual Info: HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity |
Original |
HN1B04F 400mA | |
HN1B04FContextual Info: HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity |
Original |
HN1B04F -400mA 400mA HN1B04F | |
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HN4B04JContextual Info: HN4B04J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN4B04J Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity |
Original |
HN4B04J -400mA 400mA HN4B04J | |
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Contextual Info: HN4B04J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN4B04J Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity |
Original |
HN4B04J 400mA | |
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Contextual Info: HN4B04J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN4B04J Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity |
Original |
HN4B04J -400mA 400mA | |
HN1B04F
Abstract: HN1B04
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Original |
HN1B04F -400mA 400mA HN1B04F HN1B04 | |
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Contextual Info: TOSHIBA RN4911 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 2 .1± 0.1 1.25 ± 0.1 • Including Two Devices in US6 (Ultra Super Mini Type |
OCR Scan |
RN4911 | |
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Contextual Info: TOSHIBA RN4602 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R N I R I ) ? SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm + 0.2 2 .8 -0 .3 + 0.2 1 .6 - 0.1 |
OCR Scan |
RN4602 | |
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Contextual Info: TOSHIBA RN4605 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R N a f i n Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8 -0.3 + 0.2 1. 6 - 0.1 3- • |
OCR Scan |
RN4605 47ktt | |
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Contextual Info: TOSHIBA RN4982 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) R N A Q ft 7 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 ± 0.1 • Including Two Devices in US6 (U ltra Super Mini Type |
OCR Scan |
RN4982 | |
HN4B04JContextual Info: HN4B04J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN4B04J Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity |
Original |
HN4B04J -400mA 400mA HN4B04J | |
transistor wr2Contextual Info: TOSHIBA RN4606 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R N A fi fl f i Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 2 .8 + 0.2 - 0.3 + 0.2 1 . 6 - 0.1 |
OCR Scan |
RN4606 961001EAA2' transistor wr2 | |