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    TOSHIBA TRANSISTOR K2608 Search Results

    TOSHIBA TRANSISTOR K2608 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    TOSHIBA TRANSISTOR K2608 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K2608

    Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSIII 2SK2608 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 3.73 High forward transfer admittance : |Yfs|= 2.6 S (typ.) (typ.) Low leakage current


    Original     		2SK2608 K2608 PDF

    transistor k2608

    Abstract: K2608 toshiba transistor k2608 2sk2608
    Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) High forward transfer admittance : |Yfs|= 2.6 S (typ.) Low leakage current


    Original     		2SK2608 transistor k2608 K2608 toshiba transistor k2608 2sk2608 PDF

    K2608

    Abstract: transistor k2608 2SK2608 equivalent 2-10P1B 2SK2608
    Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) z High forward transfer admittance : |Yfs|= 2.6 S (typ.) z Low leakage current


    Original     		2SK2608 K2608 transistor k2608 2SK2608 equivalent 2-10P1B 2SK2608 PDF

    transistor k2608

    Abstract: K2608 2sk2608
    Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) z High forward transfer admittance : |Yfs|= 2.6 S (typ.) z Low leakage current


    Original     		2SK2608 transistor k2608 K2608 2sk2608 PDF

    transistor k2608

    Abstract: K2608 2-10P1B 2SK2608
    Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) z High forward transfer admittance : |Yfs|= 2.6 S (typ.) z Low leakage current


    Original     		2SK2608 transistor k2608 K2608 2-10P1B 2SK2608 PDF