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    TOSHIBA TRANSISTOR K2608 Search Results

    TOSHIBA TRANSISTOR K2608 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    		Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    		Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    27S185DM/B
    		Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    TOSHIBA TRANSISTOR K2608 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K2608

    Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSIII 2SK2608 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 3.73 High forward transfer admittance : |Yfs|= 2.6 S (typ.) (typ.) Low leakage current


    Original     		2SK2608 K2608 PDF

    transistor k2608

    Abstract: K2608 toshiba transistor k2608 2sk2608
    Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) High forward transfer admittance : |Yfs|= 2.6 S (typ.) Low leakage current


    Original     		2SK2608 transistor k2608 K2608 toshiba transistor k2608 2sk2608 PDF

    K2608

    Abstract: transistor k2608 2SK2608 equivalent 2-10P1B 2SK2608
    Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) z High forward transfer admittance : |Yfs|= 2.6 S (typ.) z Low leakage current


    Original     		2SK2608 K2608 transistor k2608 2SK2608 equivalent 2-10P1B 2SK2608 PDF

    transistor k2608

    Abstract: K2608 2sk2608
    Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) z High forward transfer admittance : |Yfs|= 2.6 S (typ.) z Low leakage current


    Original     		2SK2608 transistor k2608 K2608 2sk2608 PDF

    transistor k2608

    Abstract: K2608 2-10P1B 2SK2608
    Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) z High forward transfer admittance : |Yfs|= 2.6 S (typ.) z Low leakage current


    Original     		2SK2608 transistor k2608 K2608 2-10P1B 2SK2608 PDF