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    TOSHIBA MG50Q2YS50 Search Results

    TOSHIBA MG50Q2YS50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB6586BFG
    Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Controller/Vout(V)=18/Square Wave Datasheet
    TC78B006AFNG
    Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/1 Phase Pre Driver/Vout(V)=40/Square, Sine Wave Datasheet
    TB62216FTG
    Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/2ch/Vout(V)=40/Iout(A)=2.5 Datasheet
    TB6613FTG
    Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/8ch/Vout(V)=6/Iout(A)=0.8 Datasheet
    TB67H303HG
    Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=10 Datasheet

    TOSHIBA MG50Q2YS50 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    toshiba mg50q2ys50

    Abstract: MG50Q2YS50 tip 31 power transistor motor dc MG50Q2Y
    Contextual Info: TOSHIBA MG50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode


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    MG50Q2YS50 2-94D4A toshiba mg50q2ys50 MG50Q2YS50 tip 31 power transistor motor dc MG50Q2Y PDF

    IRF 24N

    Abstract: MG50Q2YS50A 294D
    Contextual Info: TOSHIBA MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load • Low Saturation Voltage : v CE(sat) = 3-e v (Max.)


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    MG50Q2YS50A 2-94D4A 961001EAA1 10//s IRF 24N MG50Q2YS50A 294D PDF

    MG50Q2YS50

    Abstract: toshiba mg50q2ys50
    Contextual Info: MG50Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode


    Original
    MG50Q2YS50 2-94D4A MG50Q2YS50 toshiba mg50q2ys50 PDF

    MG50Q2YS50

    Contextual Info: MG50Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max)


    Original
    MG50Q2YS50 2-94D4A MG50Q2YS50 PDF

    Contextual Info: T O SH IB A MG50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


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    MG50Q2YS50 TjS125Â 10//s PDF

    tf03

    Abstract: MG50Q2YS50A
    Contextual Info: TO SH IBA MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. /^ \T _3_J.*_T _3 ig /iu u u cu v e L/uau


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    MG50Q2YS50A tf03 MG50Q2YS50A PDF

    mg50q2ys50

    Contextual Info: T O SH IB A MG50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf= 0 .3 ^ s Max. Inductive Load Low Saturation Voltage • V c e (sat) —3.6V (Max.)


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    MG50Q2YS50 mg50q2ys50 PDF

    MG50Q2YS50A

    Contextual Info: TO SH IBA MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. /^ \T _3_J.*_T _3 ig /iu u u cu v e L/uau


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    MG50Q2YS50A 2-94D4A MG50Q2YS50A PDF

    mg50q2ys50

    Contextual Info: T O SH IB A MG50Q2YS50A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage : V C E ( s a t ) = 3.6V (Max.)


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    MG50Q2YS50A 961001EAA1 mg50q2ys50 PDF

    Contextual Info: T O SH IB A MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. @Inductive Load • Low Saturation Voltage : v C E(sat) = 3-6Y (Max.)


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    MG50Q2YS50A 961001EAA1 PDF

    Contextual Info: T O S H IB A MG50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : t f= 0 .3 /* s Max. @ Inductive Load • Low Satu ration Voltage : V CE (sat) = 3.6V (Max.)


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    MG50Q2YS50 961001EAA2 PDF

    G50Q2YS50

    Contextual Info: TOSHIBA MG50Q2YS50A TEN TATIVE TO S H IB A G TR M O D U LE SILICO N IM C H A N N EL IG B T MG50Q2YS50A HIGH PO W ER SW ITC H IN G A P P LIC A TIO N S . M O TO R C O N TR O L A P P LIC A TIO N S . High Input Impedance High Speed : tf= 0.3/iS Max. @Inductive Load


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    MG50Q2YS50A G50Q2YS50A G50Q2YS50 PDF