K4108
Abstract: toshiba k4108 2SK4108 transistor k4108
Contextual Info: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4108 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) z Low leakage current
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2SK4108
K4108
toshiba k4108
2SK4108
transistor k4108
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toshiba k4108
Abstract: K4108 toshiba 2sk4108 2SK4108 transistor Toshiba K4108 transistor k4108 2SK410
Contextual Info: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4108 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) z Low leakage current
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2SK4108
toshiba k4108
K4108
toshiba 2sk4108
2SK4108
transistor Toshiba K4108
transistor k4108
2SK410
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toshiba k4108
Abstract: k4108 2SK4108 toshiba 2sk4108 transistor k4108 transistor Toshiba K4108
Contextual Info: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4108 Unit: mm Switching Regulator Applications z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) : IDSS = 100 A (max) (VDS = 500 V)
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2SK4108
150lled
toshiba k4108
k4108
2SK4108
toshiba 2sk4108
transistor k4108
transistor Toshiba K4108
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toshiba k4108
Abstract: k4108 2SK4108 toshiba 2sk4108 SC-65
Contextual Info: 2SK4108 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK4108 ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 14 S (標準)
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2SK4108
SC-65
2-16C1B
toshiba k4108
k4108
2SK4108
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SC-65
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