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    TOSHIBA K3667 Search Results

    TOSHIBA K3667 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB6586BFG
    		Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Controller/Vout(V)=18/Square Wave Datasheet
    TC78B006AFNG
    		Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/1 Phase Pre Driver/Vout(V)=40/Square, Sine Wave Datasheet
    TB62216FTG
    		Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/2ch/Vout(V)=40/Iout(A)=2.5 Datasheet
    TB6613FTG
    		Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/8ch/Vout(V)=6/Iout(A)=0.8 Datasheet
    TB67H303HG
    		Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=10 Datasheet

    TOSHIBA K3667 Datasheets Context Search

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    K3667

    Abstract: toshiba k3667 transistor compatible k3667 2SK3667 ALL k3667
    Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3667 K3667 toshiba k3667 transistor compatible k3667 2SK3667 ALL k3667 PDF

    K3667

    Abstract: toshiba k3667 2SK3667 transistor compatible k3667
    Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3667 K3667 toshiba k3667 2SK3667 transistor compatible k3667 PDF

    K3667

    Abstract: toshiba k3667 ALL k3667 2sk3667 equivalent 2SK3667 K366 2sk3667 transistor equivalent
    Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3667 K3667 toshiba k3667 ALL k3667 2sk3667 equivalent 2SK3667 K366 2sk3667 transistor equivalent PDF

    toshiba k3667

    Abstract: K3667 ALL k3667 2SK3667
    Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3667 toshiba k3667 K3667 ALL k3667 2SK3667 PDF

    toshiba k3667

    Abstract: K3667 ALL k3667 K366 2SK3667
    Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3667 toshiba k3667 K3667 ALL k3667 K366 2SK3667 PDF