TOSHIBA K2601 Search Results

TOSHIBA K2601 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TB6586BFG		Toshiba Electronic Devices & Storage Corporation	Brushless Motor Driver/3 Phases Controller/Vout(V)=18/Square Wave	Datasheet
TC78B006AFNG		Toshiba Electronic Devices & Storage Corporation	Brushless Motor Driver/1 Phase Pre Driver/Vout(V)=40/Square, Sine Wave	Datasheet
TB62216FTG		Toshiba Electronic Devices & Storage Corporation	Brushed Motor Driver/2ch/Vout(V)=40/Iout(A)=2.5	Datasheet
TB6613FTG		Toshiba Electronic Devices & Storage Corporation	Brushed Motor Driver/8ch/Vout(V)=6/Iout(A)=0.8	Datasheet
TB67H303HG		Toshiba Electronic Devices & Storage Corporation	Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=10	Datasheet

TOSHIBA K2601 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
toshiba transistor k2601 Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON-resistance : RDS (ON) = 0.56 High forward transfer admittance : \|Yfs\| = 7.0 S (typ.) Unit: mm	Original	2SK2601 toshiba transistor k2601	PDF
K2601 Abstract: toshiba K2601 datasheet toshiba K2601 toshiba transistor k2601 2SK2601 SC-65 Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance : \|Yfs\| = 7.0 S (typ.)	Original	2SK2601 K2601 toshiba K2601 datasheet toshiba K2601 toshiba transistor k2601 2SK2601 SC-65	PDF
Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 7.0 S (typ.)	Original	2SK2601	PDF
K2601 Abstract: toshiba K2601 toshiba K2601 datasheet toshiba transistor k2601 2SK2601 SC-65 Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 7.0 S (typ.)	Original	2SK2601 K2601 toshiba K2601 toshiba K2601 datasheet toshiba transistor k2601 2SK2601 SC-65	PDF
toshiba K2601 Abstract: K2601 toshiba transistor k2601 2SK2601 SC-65 toshiba 2-16c1b Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 7.0 S (typ.)	Original	2SK2601 toshiba K2601 K2601 toshiba transistor k2601 2SK2601 SC-65 toshiba 2-16c1b	PDF
toshiba K2601 Abstract: K2601 toshiba transistor k2601 Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 7.0 S (typ.)	Original	2SK2601 toshiba K2601 K2601 toshiba transistor k2601	PDF
toshiba K2601 Abstract: toshiba transistor k2601 K2601 2SK2601 SC-65 Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 7.0 S (typ.)	Original	2SK2601 toshiba K2601 toshiba transistor k2601 K2601 2SK2601 SC-65	PDF
K2601 Abstract: toshiba K2601 2SK2601 jeita sc-65 Contextual Info: 2SK2601 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅤ 2SK2601 ○ スイッチングレギュレータ単位: mm z オン抵抗が低い。 : RDS (ON) = 0.75 Ω (標準) z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 7.0 S (標準)	Original	2SK2601 SC-65 2-16C1B K2601 2002/95/EC) K2601 toshiba K2601 2SK2601 jeita sc-65	PDF
toshiba K2601 Abstract: K2601 jeita sc-65 2SK2601 Contextual Info: 2SK2601 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅤ 2SK2601 ○ スイッチングレギュレータ単位: mm z オン抵抗が低い。 : RDS (ON) = 0.56 Ω (標準) z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 7.0 S (標準)	Original	2SK2601 SC-65 2-16C1B K2601 2002/95/EC) toshiba K2601 K2601 jeita sc-65 2SK2601	PDF