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    TOP-SIDE MARKING X1 Search Results

    TOP-SIDE MARKING X1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG80C186-10/BZA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) PDF Buy
    ICM7555MTV/883
    Rochester Electronics LLC ICM7555MTV/883 - Dual marked (5962-8950303GA) PDF Buy
    MQ80C186-10/BYA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) PDF Buy
    54121/BCA
    Rochester Electronics LLC 54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) PDF Buy
    54F191/QEA
    Rochester Electronics LLC 54F191/QEA - Dual marked (5962-9058201EA) PDF Buy

    TOP-SIDE MARKING X1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PACKAGE TOP VIEW EXAMPLE PCB LAND PATTERN 3 ±0.05 3.30 2.26 0.30 3 ±0.05 1.80 x16 1.80 Pin 1 Marking 0.52 0.50 PACKAGE SIDE VIEW x16 3.26 0.50 0.20 0.26 0.25 REF PACKAGE BOTTOM VIEW 0.20 x16 0.25 REF 1.80 ±0.10 Thermal Pad 1.80 ±0.10 0.25 ±0.05 0.50 Seating


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    AB08XX AB08XX PDF

    X22206601

    Abstract: 23-P10-Si SB-S11-P1-01-1-1A 63-P10-SI DIN 46244 CONNECTOR X8340-SZ4 din 46244-A6.3-0.8 19BGT-2-2210 46247 6.3 x 0.8 DIN+46244+CONNECTOR
    Contextual Info: Power distribution systems - accessories Connections and terminals Line terminal X 221 503 01 suitable for Line terminal max. 63 A X 221 503 01 max. tightening torque 3.0 Nm Power-D-Box with sockets pre-wired 14 .551 50 1.97 30 1.18 busbar X1, X2 blade terminals 6.3 mm


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    19BGT-2-X8340-S02 19BGT-2-X8340-SZ4 X8340-S02 X8340-SZ4 ESS20 /ESX10 ESS20 ESX10 19BGT-2-ESS20 19BGT-2-ESX10 X22206601 23-P10-Si SB-S11-P1-01-1-1A 63-P10-SI DIN 46244 CONNECTOR X8340-SZ4 din 46244-A6.3-0.8 19BGT-2-2210 46247 6.3 x 0.8 DIN+46244+CONNECTOR PDF

    Contextual Info: November 1992 Edition 1.0 FUJITSU DATA SHEET M B 8 1 1 7 1 0 1 -60/-70/-80 CMOS 16M x 1 BIT NIBBLE MODE DYNAMIC RAM CMOS 16,777,216 x 1 BIT Nibble Mode Dynamic RAM The Fujitsu MB8117101 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 16,777,216 memory cells in a x1 configuration. The MB8117101 features a "nibble” mode of


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    MB8117101 096-bits KV0008-92YK1 PDF

    ag marking

    Contextual Info: September 1993 Edition 3.1 FUJITSU DATA SHEET MB8116101-60/-70/-80 CMOS 16M x 1 BIT NIBBLE MODE DYNAMIC RAM CMOS 16,777,216 x 1 BIT Nibble Mode Dynamic RAM The Fujitsu MB8116101 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 16,777,216 memory cells in a x1 configuration. The MB8116101 features a ’’nibble” mode of


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    MB8116101-60/-70/-80 MB8116101 096-bits JV0088-939J3 ag marking PDF

    512MB NOR FLASH

    Abstract: BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE
    Contextual Info: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on Bus 2


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    S72WS-N 16-bit 512MB NOR FLASH BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE PDF

    Contextual Info: DMP58D0LFB P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C -50V 8Ω @ VGS = -5V X1-DFN1006-3 -310A • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


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    DMP58D0LFB AEC-Q101 X1-DFN1006-3 -310A X1-DFN1006-3 DS35206 PDF

    TB200HB

    Abstract: TB100 TB-3000 QC19 QC208 TB200HB02 TB300-08 203HB jumpers TB200
    Contextual Info: MAGNUM Base & Rail Mount Connectors Euro-MAG Series PCB – Spring Clamp Single & Double Row Filtered Connectors Series TB100 Double Row Terminal Blocks SPECIFICATIONS Rating: 30A, 300V* Center Spacing: .375” or 3/8” 9.52 mm Wire Range: #14 - 22 AWG CU


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    TB100 TB100-08 TB100-04SP TB200HB TB100 TB-3000 QC19 QC208 TB200HB02 TB300-08 203HB jumpers TB200 PDF

    SOT23 marking sk

    Abstract: 11X16 marking SK SOT23 CAT93C66LI-G
    Contextual Info: CAT93C66, CAT93W66 4 kb Microwire Serial CMOS EEPROM Description The CAT93C66 is a 4 kb CMOS Serial EEPROM device which is organized as either 256 registers of 16 bits ORG pin at VCC or 512 registers of 8 bits (ORG pin at GND). The CAT93W66 features x16


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    CAT93C66, CAT93W66 CAT93C66 751BD 517AZ 511AK CAT93C66/D SOT23 marking sk 11X16 marking SK SOT23 CAT93C66LI-G PDF

    Contextual Info: Sept FUJITSU Edition zditk 4.1 DATA SHEET MB8116WO-60/-70/-80 CMOS 16Mx 1 BIT FAST PAGE MODE DYNAMIC RA CMOS 16,777,216 x 1 Bit Fast Page Mode Dynamic RAM ' t The Fujitsu MB8116100 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 16,777,216 memory cells in a x1 configuration. The MB8116100 features a ’ fast page" mode of


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    MB8116WO-60/-70/-80 MB8116100 096-bits MB8116100 0004DÃ MB8116100-60 MB8116100-70 MB8116100-80 PDF

    SOIC127P1032X265-16AN

    Contextual Info: Si860x B IDIRECTIONAL I 2 C I SOLA TORS WITH U NIDIRECTIONAL D IGITA L C HANNELS Features  Independent, bidirectional SDA and SCL isolation channels Open drain outputs with 35 mA sink current  High electromagnetic immunity  Wide operating supply voltage


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    Si860x AEC-Q100 Si8605, Si8606) SOIC-16 60-year SOIC127P1032X265-16AN PDF

    S2-0703

    Abstract: EN60947-5-1 IEC60529 IEC60947-5-1 IEC60947-5-5 HW9ZKG1 XW marking
    Contextual Info: X Series E-Stops XW Series 22mm XW E-Stops Key features: X Series E-Stops CCC No. 2005010305150897 Door Interlock Switches UL File #E68961 Overview • The depth behind the panel is only 48.7 mm for 1 to 4 contacts with terminal cover for illuminated and non-illuminated units.


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    E68961 IEC60947-5-5, IEC60529) S2-0703 EN60947-5-1 IEC60529 IEC60947-5-1 IEC60947-5-5 HW9ZKG1 XW marking PDF

    digital galvanic isolator

    Abstract: si8402 bsda SI8400AB-B-IS
    Contextual Info: Si840x B IDIRECTIONAL I 2 C I SOLA TORS WITH U NIDIRECTIONAL D IGITA L C HANNELS Features  Independent, bidirectional SDA and SCL isolation channels Open drain outputs with 35 mA sink current  60-year life at rated working voltage  High electromagnetic immunity


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    Si840x Si8405) SOIC-16 60-year digital galvanic isolator si8402 bsda SI8400AB-B-IS PDF

    PILKOR PCX2 337 MKP

    Abstract: PILKOR WK PCX2 337 MKP 470n 275v MKP PILKOR PCX2 337 PCX2 337 470n m 275v x2 mkp 470n X2 XcxxX PCX2 337 MKP pilkor
    Contextual Info: Pilkor components Interference Suppression film capacitors PCX2 337 MKP RADIAL POTTED CAPACITORS Pitch 10.0/15.0/22.5/27.5 mm QUICK REFERENCE DATA Capacitance range E6 series * 0.01㎌ to 3.3㎌ Capacitance tolerance ±1 0 %, ±20 % Rated (AC) voltage 50 to 60 Hz


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    250Vac 275Vac UL1414, CSA-C22 UL1283, WK0101) PILKOR PCX2 337 MKP PILKOR WK PCX2 337 MKP 470n 275v MKP PILKOR PCX2 337 PCX2 337 470n m 275v x2 mkp 470n X2 XcxxX PCX2 337 MKP pilkor PDF

    Contextual Info: Si840x B IDIRECTIONAL I 2 C I SOLA TORS WITH U NIDIRECTIONAL D IGITA L C HANNELS Features  Independent, bidirectional SDA and SCL isolation channels Open drain outputs with 35 mA sink current  60-year life at rated working voltage  High electromagnetic immunity


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    Si840x 60-year Si8405) SOIC-16 PDF

    Si8640BB

    Contextual Info: Si8640/41/42/45 L O W - P OWER Q UAD - C HANNEL D IGITAL I SOLATOR Features  High-speed operation DC to 150 Mbps  No start-up initialization required  Wide Operating Supply Voltage 2.5–5.5 V  Up to 5000 VRMS isolation   


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    Si8640/41/42/45 60-year Si8640BB PDF

    512MB NOR FLASH

    Abstract: BFW transistors Diode Mark N10 MCP NOR FLASH SDRAM 137-Ball 66 ball nor flash JESD 95-1, SPP-010 NAND FLASH BGA S72WS256NDE S72WS256NEE
    Contextual Info: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on


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    S72WS-N 16-bit 200rranty 512MB NOR FLASH BFW transistors Diode Mark N10 MCP NOR FLASH SDRAM 137-Ball 66 ball nor flash JESD 95-1, SPP-010 NAND FLASH BGA S72WS256NDE S72WS256NEE PDF

    10D2L

    Contextual Info: Issue X-1 CM1692 Praetorian L-C LCD and Camera EMI Filter Array with ESD Protection in Ultra-Thin uDFN Packages Features • • Four, six, and eight channels of EMI filtering with integrated ESD protection Pi-style EMI filters in a capacitor-inductor-capacitor


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    CM1692 12-lead 16-lead 12-lead: 16-lead: and134 MO-229C 16-Lead, 10D2L PDF

    KT4B

    Abstract: NDN3WH ts1401 10SP 016 ts1002 TB400 NTQ23-WH
    Contextual Info: Connectors Section Contents Page Rail mount terminal blocks NDN Series 35mm DIN rail mount blocks . . . . . . . . 304-305 N512-BK 12-Pole block . . . . . . . . . . . . . . . . . . . . . . . . . 306 NFT2-WH 2-Pole block . . . . . . . . . . . . . . . . . . . . . . . . . 306


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    N512-BK 12-Pole TS0805 TS0806 TS1005 TS1006 KT4B NDN3WH ts1401 10SP 016 ts1002 TB400 NTQ23-WH PDF

    TS1003

    Abstract: TS0801 TS1001 TS1002 NDN111AWH 220HB TB200HB ts08 ts1201 TB400
    Contextual Info: Wire Connection Products Section Contents Page Rail mount terminal blocks NDN Series 35mm DIN rail mount blocks . . . . . . . . 286-287 N512-BK 12-Pole block . . . . . . . . . . . . . . . . . . . . . . . . . . 288 NFT2-WH 2-Pole block . . . . . . . . . . . . . . . . . . . . . . . . . . 288


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    N512-BK 12-Pole TS1003 TS0801 TS1001 TS1002 NDN111AWH 220HB TB200HB ts08 ts1201 TB400 PDF

    Si8400

    Abstract: SOIC127P600X173-8N AN375 SOIC-16 VDE0884 Si8400AA-A-IS SI8405AA-B-IS1
    Contextual Info: Si840x B IDIRECTIONAL I 2 C I SOLA TORS WITH U NIDIRECTIONAL D IGITA L C HANNELS Features  Independent, bidirectional SDA and SCL isolation channels Open drain outputs with 35 mA sink current  60-year life at rated working voltage  High electromagnetic immunity


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    Si840x 60-year Si8405) SOIC-16 Si8400 SOIC127P600X173-8N AN375 VDE0884 Si8400AA-A-IS SI8405AA-B-IS1 PDF

    asda data sheet

    Abstract: asda digital galvanic isolator digital galvanic isolator mbps digital Isolator interface AN375 Si8400 VDE0884 SI8400AB Si8405AB-B-IS
    Contextual Info: Si840x B IDIRECTIONAL I 2 C I SOLA TORS WITH U NIDIRECTIONAL D IGITA L C HANNELS Features Pin Assignments  Independent, bidirectional SDA and SCL isolation channels  Open  drain outputs with 35 mA sink current Supports  2 I C clocks up to 1.7 MHz


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    Si840x Si8405) SO-16 asda data sheet asda digital galvanic isolator digital galvanic isolator mbps digital Isolator interface AN375 Si8400 VDE0884 SI8400AB Si8405AB-B-IS PDF

    Si8610BB

    Contextual Info: Si8610/20/21/22 L O W - P O W E R S I N G LE A N D D U A L -C H A N N E L D I G I TA L I S O L A T O R S Features  High-speed operation DC to 150 Mbps  No start-up initialization required  Wide Operating Supply Voltage 2.5–5.5 V  Up to 5000 VRMS isolation


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    Si8610/20/21/22 60-year Si8610BB PDF

    IR 229C

    Abstract: SOT-95 4VN2
    Contextual Info: Issue X-1 CM1248 Low Capacitance Transient Voltage Suppressors / ESD Protectors Features • • • Low I/O capacitance at 10pF at 0V In-system ESD protection to ±20kV contact discharge, per the IEC 61000-4-2 international standard • Compact SMT package saves board space and


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    CM1248 CM1248-04S9 CM1248-04QG CM1248-04QF CM1248-08DE OT-953 CM1248-04S9 MO-229C IR 229C SOT-95 4VN2 PDF

    SI8451BB

    Abstract: Si8451 SI8440 Si8450 B23A3 anritsu PATTERN GENERATOR Digital Isolators 4 channel SOIC16 VDE0884
    Contextual Info: Si8450/51/52/55 I S O P R O L O W P O W E R F I V E - C H A N N E L D I G I TA L I S O L A T O R Features  High-speed operation: DC to 150 Mbps  Low propagation delay: <10 ns worst case  Wide Operating Supply Voltage: 2.70–5.5 V  Ultra low power typical


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    Si8450/51/52/55 SI8451BB Si8451 SI8440 Si8450 B23A3 anritsu PATTERN GENERATOR Digital Isolators 4 channel SOIC16 VDE0884 PDF