TOP-SIDE MARKING X1 Search Results
TOP-SIDE MARKING X1 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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| ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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| MQ80C186-10/BYA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) |
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| 54121/BCA |
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54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) |
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| 54F191/QEA |
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54F191/QEA - Dual marked (5962-9058201EA) |
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TOP-SIDE MARKING X1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PACKAGE TOP VIEW EXAMPLE PCB LAND PATTERN 3 ±0.05 3.30 2.26 0.30 3 ±0.05 1.80 x16 1.80 Pin 1 Marking 0.52 0.50 PACKAGE SIDE VIEW x16 3.26 0.50 0.20 0.26 0.25 REF PACKAGE BOTTOM VIEW 0.20 x16 0.25 REF 1.80 ±0.10 Thermal Pad 1.80 ±0.10 0.25 ±0.05 0.50 Seating |
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AB08XX AB08XX | |
X22206601
Abstract: 23-P10-Si SB-S11-P1-01-1-1A 63-P10-SI DIN 46244 CONNECTOR X8340-SZ4 din 46244-A6.3-0.8 19BGT-2-2210 46247 6.3 x 0.8 DIN+46244+CONNECTOR
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19BGT-2-X8340-S02 19BGT-2-X8340-SZ4 X8340-S02 X8340-SZ4 ESS20 /ESX10 ESS20 ESX10 19BGT-2-ESS20 19BGT-2-ESX10 X22206601 23-P10-Si SB-S11-P1-01-1-1A 63-P10-SI DIN 46244 CONNECTOR X8340-SZ4 din 46244-A6.3-0.8 19BGT-2-2210 46247 6.3 x 0.8 DIN+46244+CONNECTOR | |
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Contextual Info: November 1992 Edition 1.0 FUJITSU DATA SHEET M B 8 1 1 7 1 0 1 -60/-70/-80 CMOS 16M x 1 BIT NIBBLE MODE DYNAMIC RAM CMOS 16,777,216 x 1 BIT Nibble Mode Dynamic RAM The Fujitsu MB8117101 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 16,777,216 memory cells in a x1 configuration. The MB8117101 features a "nibble” mode of |
OCR Scan |
MB8117101 096-bits KV0008-92YK1 | |
ag markingContextual Info: September 1993 Edition 3.1 FUJITSU DATA SHEET MB8116101-60/-70/-80 CMOS 16M x 1 BIT NIBBLE MODE DYNAMIC RAM CMOS 16,777,216 x 1 BIT Nibble Mode Dynamic RAM The Fujitsu MB8116101 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 16,777,216 memory cells in a x1 configuration. The MB8116101 features a ’’nibble” mode of |
OCR Scan |
MB8116101-60/-70/-80 MB8116101 096-bits JV0088-939J3 ag marking | |
512MB NOR FLASH
Abstract: BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE
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S72WS-N 16-bit 512MB NOR FLASH BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE | |
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Contextual Info: DMP58D0LFB P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C -50V 8Ω @ VGS = -5V X1-DFN1006-3 -310A • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage |
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DMP58D0LFB AEC-Q101 X1-DFN1006-3 -310A X1-DFN1006-3 DS35206 | |
TB200HB
Abstract: TB100 TB-3000 QC19 QC208 TB200HB02 TB300-08 203HB jumpers TB200
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TB100 TB100-08 TB100-04SP TB200HB TB100 TB-3000 QC19 QC208 TB200HB02 TB300-08 203HB jumpers TB200 | |
SOT23 marking sk
Abstract: 11X16 marking SK SOT23 CAT93C66LI-G
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CAT93C66, CAT93W66 CAT93C66 751BD 517AZ 511AK CAT93C66/D SOT23 marking sk 11X16 marking SK SOT23 CAT93C66LI-G | |
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Contextual Info: Sept FUJITSU Edition zditk 4.1 DATA SHEET MB8116WO-60/-70/-80 CMOS 16Mx 1 BIT FAST PAGE MODE DYNAMIC RA CMOS 16,777,216 x 1 Bit Fast Page Mode Dynamic RAM ' t The Fujitsu MB8116100 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 16,777,216 memory cells in a x1 configuration. The MB8116100 features a ’ fast page" mode of |
OCR Scan |
MB8116WO-60/-70/-80 MB8116100 096-bits MB8116100 0004DÃ MB8116100-60 MB8116100-70 MB8116100-80 | |
SOIC127P1032X265-16ANContextual Info: Si860x B IDIRECTIONAL I 2 C I SOLA TORS WITH U NIDIRECTIONAL D IGITA L C HANNELS Features Independent, bidirectional SDA and SCL isolation channels Open drain outputs with 35 mA sink current High electromagnetic immunity Wide operating supply voltage |
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Si860x AEC-Q100 Si8605, Si8606) SOIC-16 60-year SOIC127P1032X265-16AN | |
S2-0703
Abstract: EN60947-5-1 IEC60529 IEC60947-5-1 IEC60947-5-5 HW9ZKG1 XW marking
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E68961 IEC60947-5-5, IEC60529) S2-0703 EN60947-5-1 IEC60529 IEC60947-5-1 IEC60947-5-5 HW9ZKG1 XW marking | |
digital galvanic isolator
Abstract: si8402 bsda SI8400AB-B-IS
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Si840x Si8405) SOIC-16 60-year digital galvanic isolator si8402 bsda SI8400AB-B-IS | |
PILKOR PCX2 337 MKP
Abstract: PILKOR WK PCX2 337 MKP 470n 275v MKP PILKOR PCX2 337 PCX2 337 470n m 275v x2 mkp 470n X2 XcxxX PCX2 337 MKP pilkor
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250Vac 275Vac UL1414, CSA-C22 UL1283, WK0101) PILKOR PCX2 337 MKP PILKOR WK PCX2 337 MKP 470n 275v MKP PILKOR PCX2 337 PCX2 337 470n m 275v x2 mkp 470n X2 XcxxX PCX2 337 MKP pilkor | |
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Contextual Info: Si840x B IDIRECTIONAL I 2 C I SOLA TORS WITH U NIDIRECTIONAL D IGITA L C HANNELS Features Independent, bidirectional SDA and SCL isolation channels Open drain outputs with 35 mA sink current 60-year life at rated working voltage High electromagnetic immunity |
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Si840x 60-year Si8405) SOIC-16 | |
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Si8640BBContextual Info: Si8640/41/42/45 L O W - P OWER Q UAD - C HANNEL D IGITAL I SOLATOR Features High-speed operation DC to 150 Mbps No start-up initialization required Wide Operating Supply Voltage 2.5–5.5 V Up to 5000 VRMS isolation |
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Si8640/41/42/45 60-year Si8640BB | |
512MB NOR FLASH
Abstract: BFW transistors Diode Mark N10 MCP NOR FLASH SDRAM 137-Ball 66 ball nor flash JESD 95-1, SPP-010 NAND FLASH BGA S72WS256NDE S72WS256NEE
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S72WS-N 16-bit 200rranty 512MB NOR FLASH BFW transistors Diode Mark N10 MCP NOR FLASH SDRAM 137-Ball 66 ball nor flash JESD 95-1, SPP-010 NAND FLASH BGA S72WS256NDE S72WS256NEE | |
10D2LContextual Info: Issue X-1 CM1692 Praetorian L-C LCD and Camera EMI Filter Array with ESD Protection in Ultra-Thin uDFN Packages Features • • Four, six, and eight channels of EMI filtering with integrated ESD protection Pi-style EMI filters in a capacitor-inductor-capacitor |
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CM1692 12-lead 16-lead 12-lead: 16-lead: and134 MO-229C 16-Lead, 10D2L | |
KT4B
Abstract: NDN3WH ts1401 10SP 016 ts1002 TB400 NTQ23-WH
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N512-BK 12-Pole TS0805 TS0806 TS1005 TS1006 KT4B NDN3WH ts1401 10SP 016 ts1002 TB400 NTQ23-WH | |
TS1003
Abstract: TS0801 TS1001 TS1002 NDN111AWH 220HB TB200HB ts08 ts1201 TB400
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N512-BK 12-Pole TS1003 TS0801 TS1001 TS1002 NDN111AWH 220HB TB200HB ts08 ts1201 TB400 | |
Si8400
Abstract: SOIC127P600X173-8N AN375 SOIC-16 VDE0884 Si8400AA-A-IS SI8405AA-B-IS1
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Si840x 60-year Si8405) SOIC-16 Si8400 SOIC127P600X173-8N AN375 VDE0884 Si8400AA-A-IS SI8405AA-B-IS1 | |
asda data sheet
Abstract: asda digital galvanic isolator digital galvanic isolator mbps digital Isolator interface AN375 Si8400 VDE0884 SI8400AB Si8405AB-B-IS
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Si840x Si8405) SO-16 asda data sheet asda digital galvanic isolator digital galvanic isolator mbps digital Isolator interface AN375 Si8400 VDE0884 SI8400AB Si8405AB-B-IS | |
Si8610BBContextual Info: Si8610/20/21/22 L O W - P O W E R S I N G LE A N D D U A L -C H A N N E L D I G I TA L I S O L A T O R S Features High-speed operation DC to 150 Mbps No start-up initialization required Wide Operating Supply Voltage 2.5–5.5 V Up to 5000 VRMS isolation |
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Si8610/20/21/22 60-year Si8610BB | |
IR 229C
Abstract: SOT-95 4VN2
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CM1248 CM1248-04S9 CM1248-04QG CM1248-04QF CM1248-08DE OT-953 CM1248-04S9 MO-229C IR 229C SOT-95 4VN2 | |
SI8451BB
Abstract: Si8451 SI8440 Si8450 B23A3 anritsu PATTERN GENERATOR Digital Isolators 4 channel SOIC16 VDE0884
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Si8450/51/52/55 SI8451BB Si8451 SI8440 Si8450 B23A3 anritsu PATTERN GENERATOR Digital Isolators 4 channel SOIC16 VDE0884 | |