TOP-SIDE MARKING X1 Search Results

Contextual Info: PACKAGE TOP VIEW EXAMPLE PCB LAND PATTERN 3 ±0.05 3.30 2.26 0.30 3 ±0.05 1.80 x16 1.80 Pin 1 Marking 0.52 0.50 PACKAGE SIDE VIEW x16 3.26 0.50 0.20 0.26 0.25 REF PACKAGE BOTTOM VIEW 0.20 x16 0.25 REF 1.80 ±0.10 Thermal Pad 1.80 ±0.10 0.25 ±0.05 0.50 Seating

TB200HB

Abstract: THK rail TB100 TB300 TB200 TB345
Contextual Info: MAGNUM Single & Double Row Filtered Connectors Top & Bottom Marking Strips Double Row Terminal Blocks TB100, TB200, TB300, TB345 SERIES TOP MARKER STRIPS Top mounting marker strips are available in white (opaque) plastic. Two cover clips are supplied with each marker

X22206601

Abstract: 23-P10-Si SB-S11-P1-01-1-1A 63-P10-SI DIN 46244 CONNECTOR X8340-SZ4 din 46244-A6.3-0.8 19BGT-2-2210 46247 6.3 x 0.8 DIN+46244+CONNECTOR
Contextual Info: Power distribution systems - accessories Connections and terminals Line terminal X 221 503 01 suitable for Line terminal max. 63 A X 221 503 01 max. tightening torque 3.0 Nm Power-D-Box with sockets pre-wired 14 .551 50 1.97 30 1.18 busbar X1, X2 blade terminals 6.3 mm

Contextual Info: November 1992 Edition 1.0 FUJITSU DATA SHEET M B 8 1 1 7 1 0 1 -60/-70/-80 CMOS 16M x 1 BIT NIBBLE MODE DYNAMIC RAM CMOS 16,777,216 x 1 BIT Nibble Mode Dynamic RAM The Fujitsu MB8117101 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 16,777,216 memory cells in a x1 configuration. The MB8117101 features a "nibble” mode of

ag marking

Contextual Info: September 1993 Edition 3.1 FUJITSU DATA SHEET MB8116101-60/-70/-80 CMOS 16M x 1 BIT NIBBLE MODE DYNAMIC RAM CMOS 16,777,216 x 1 BIT Nibble Mode Dynamic RAM The Fujitsu MB8116101 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 16,777,216 memory cells in a x1 configuration. The MB8116101 features a ’’nibble” mode of

512MB NOR FLASH

Abstract: BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE
Contextual Info: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on Bus 2

Contextual Info: DMP58D0LFB P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C -50V 8Ω @ VGS = -5V X1-DFN1006-3 -310A • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

TB200HB

Abstract: TB100 TB-3000 QC19 QC208 TB200HB02 TB300-08 203HB jumpers TB200
Contextual Info: MAGNUM Base & Rail Mount Connectors Euro-MAG Series PCB – Spring Clamp Single & Double Row Filtered Connectors Series TB100 Double Row Terminal Blocks SPECIFICATIONS Rating: 30A, 300V* Center Spacing: .375” or 3/8” 9.52 mm Wire Range: #14 - 22 AWG CU

SOT23 marking sk

Abstract: 11X16 marking SK SOT23 CAT93C66LI-G
Contextual Info: CAT93C66, CAT93W66 4 kb Microwire Serial CMOS EEPROM Description The CAT93C66 is a 4 kb CMOS Serial EEPROM device which is organized as either 256 registers of 16 bits ORG pin at VCC or 512 registers of 8 bits (ORG pin at GND). The CAT93W66 features x16

Contextual Info: Connectors Section Contents Page Feed through blocks DS series . . . . . . . . . . . . . . . . . . 334 Feed through blocks (DP series) . . . . . . . . . . . . . . 335-336 Mini feed through blocks (DM series) . . . . . . . . . . . . . . 337 Double level blocks (DDP series). . . . . . . . . . . . . . . . . . 338

Contextual Info: Sept FUJITSU Edition zditk 4.1 DATA SHEET MB8116WO-60/-70/-80 CMOS 16Mx 1 BIT FAST PAGE MODE DYNAMIC RA CMOS 16,777,216 x 1 Bit Fast Page Mode Dynamic RAM ' t The Fujitsu MB8116100 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 16,777,216 memory cells in a x1 configuration. The MB8116100 features a ’ fast page" mode of

SOIC127P1032X265-16AN

Contextual Info: Si860x B IDIRECTIONAL I 2 C I SOLA TORS WITH U NIDIRECTIONAL D IGITA L C HANNELS Features  Independent, bidirectional SDA and SCL isolation channels Open drain outputs with 35 mA sink current  High electromagnetic immunity  Wide operating supply voltage

AEC-Q101

Abstract: marking code NZ
Contextual Info: DMP58D0LFB P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) Package -50V 8Ω @ VGS = -5V X1-DFN1006-3 ID TA = +25°C -310A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

S2-0703

Abstract: EN60947-5-1 IEC60529 IEC60947-5-1 IEC60947-5-5 HW9ZKG1 XW marking
Contextual Info: X Series E-Stops XW Series 22mm XW E-Stops Key features: X Series E-Stops CCC No. 2005010305150897 Door Interlock Switches UL File #E68961 Overview • The depth behind the panel is only 48.7 mm for 1 to 4 contacts with terminal cover for illuminated and non-illuminated units.

digital galvanic isolator

Abstract: si8402 bsda SI8400AB-B-IS
Contextual Info: Si840x B IDIRECTIONAL I 2 C I SOLA TORS WITH U NIDIRECTIONAL D IGITA L C HANNELS Features  Independent, bidirectional SDA and SCL isolation channels Open drain outputs with 35 mA sink current  60-year life at rated working voltage  High electromagnetic immunity

PILKOR PCX2 337 MKP

Abstract: PILKOR WK PCX2 337 MKP 470n 275v MKP PILKOR PCX2 337 PCX2 337 470n m 275v x2 mkp 470n X2 XcxxX PCX2 337 MKP pilkor
Contextual Info: Pilkor components Interference Suppression film capacitors PCX2 337 MKP RADIAL POTTED CAPACITORS Pitch 10.0/15.0/22.5/27.5 mm QUICK REFERENCE DATA Capacitance range E6 series * 0.01㎌ to 3.3㎌ Capacitance tolerance ±1 0 %, ±20 % Rated (AC) voltage 50 to 60 Hz

Contextual Info: Si8650/51/52/55 L O W P O W E R F I V E - C HANNEL D IGITAL I SOLATOR Features          High-speed operation DC to 150 Mbps No start-up initialization required Wide Operating Supply Voltage 2.5–5.5 V Up to 5000 VRMS isolation

M3361

Contextual Info: BCcomponents DATA SHEET MKP 336 1 X1 Interference suppression film capacitors Product specification Supersedes data of 2001 Sep 13 File under BCcomponents, BC05 2002 Oct 08 BCcomponents Product specification Interference suppression film capacitors MKP 336 1

Contextual Info: Si840x B IDIRECTIONAL I 2 C I SOLA TORS WITH U NIDIRECTIONAL D IGITA L C HANNELS Features  Independent, bidirectional SDA and SCL isolation channels Open drain outputs with 35 mA sink current  60-year life at rated working voltage  High electromagnetic immunity

Contextual Info: Si840x B IDIRECTIONAL I 2 C I SOLA TORS WITH U NIDIRECTIONAL D IGITA L C HANNELS Features  Independent, bidirectional SDA and SCL isolation channels Open drain outputs with 35 mA sink current  60-year life at rated working voltage  High electromagnetic immunity

SI8641

Abstract: Si8641BD-A-IS Si8641BD-B-IS SI8642ED si8642bd-b-is si86xx Si8642ED-B-IS si8640 Si8640ED-B-IS Si8645BD-B-IS
Contextual Info: Si8640/41/42/45 L O W - P OWER Q UAD - C HANNEL D IGITAL I SOLATOR Features  High-speed operation DC to 150 Mbps  No start-up initialization required  Wide Operating Supply Voltage 2.5–5.5 V  Up to 5000 VRMS isolation   

DA12A

Contextual Info: S72WS-N Based MCPs 1.8 Volt-only Multi-Chip Product MCP x16 Flash Memory and SDRAM on Split Bus 256/512/768 Mb Simultaneous Read/Write, Burst Mode Flash Memory, 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 256/128 Mb (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Bus 2

Si8640BB

Contextual Info: Si8640/41/42/45 L O W - P OWER Q UAD - C HANNEL D IGITAL I SOLATOR Features  High-speed operation DC to 150 Mbps  No start-up initialization required  Wide Operating Supply Voltage 2.5–5.5 V  Up to 5000 VRMS isolation   

512MB NOR FLASH

Abstract: BFW transistors Diode Mark N10 MCP NOR FLASH SDRAM 137-Ball 66 ball nor flash JESD 95-1, SPP-010 NAND FLASH BGA S72WS256NDE S72WS256NEE
Contextual Info: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on