TO3FP Search Results

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

to3fp

Abstract: STW60N65
Contextual Info: STW60N65M5 STFW60N65M5 N-channel 650 V, 0.049 Ω, 46 A MDmesh V Power MOSFET in TO-247, TO-3PF Features • Order codes VDSS @ TJmax RDS on max ID STFW60N65M5 STW60N65M5 710 V < 0.059 Ω 46 A 1 Worldwide best RDS(on) * area amongst the silicon based devices

D880 voltage regulator

Abstract: B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition Vet: (V) Ic (A) hpe Condition Vce(sat), VeE(sat)(v) Condition (V) (mA) MAX KST56(2G) KST55(2H) 80 0.5

STW3N170

Abstract: stfw3n170 N-channel MOSFET to-247
Contextual Info: STFW3N170, STW3N170 N-channel 1700 V, 8 Ω typ., 2.3 A, PowerMESH Power MOSFET in TO-3FP and TO-247 packages Datasheet − preliminary data Features VDSS RDS on max ID 1700 V 12 Ω 2.3 A Order codes STFW3N170 STW3N170 1 3 2 • Intrinsic capacitances and Qg minimized

Contextual Info: STW60N65M5 STFW60N65M5 N-channel 650 V, 0.049 Ω, 46 A MDmesh V Power MOSFET in TO-247, TO-3PF Features • Order codes VDSS @ TJmax RDS on max ID STFW60N65M5 STW60N65M5 710 V < 0.059 Ω 46 A Worldwide best RDS(on) * area amongst the silicon based devices