TO262AA Search Results

Contextual Info: FDB06AN08A1, FDI06AN08A1, FDP06AN08A1 Data Sheet Preliminary Information itle UF7 3P F76 D3 April 2001 75V, 0.0063 Ohm, N-Channel, Logic Level UltraFET Trench Power MOSFET The FDB06AN08A1, FDI06AN8A1, and FDP06AN08A1 devices are manufactured using Fairchild Semiconductor’s

50WQ04FN

Contextual Info: Bulletin PD-20524 rev. F 06/04 50WQ04FN SCHOTTKY RECTIFIER 5.5 Amp IF AV = 5.5Amp VR = 40V Description/ Features Major Ratings and Characteristics Characteristics 50WQ04FN Units The 50WQ04FN surface mount Schottky rectifier has been designed for applications requiring low forward drop and

IGBT DRIVER ignition coil automotive

Abstract: automotive ignition coil ignition coil IGBT ignition spice smart ignition igbt ignition IGBT igbt ignition automotive ignition automotive ignition coil on plug ignition IGBTS drivers
Contextual Info: ISL9V5045S3S / ISL9V5045S3 EcoSPARKTM N-Channel Ignition IGBT 500mJ, 450V Features General Description „ SCIS Energy = 500mJ at TJ = 25oC The ISL9V5045S3S and ISL9V5045S3 are next generation ignition IGBTs that offer outstanding SCIS capability in the industry standard D²-Pak TO-263 plastic package. This

Contextual Info: New Product V20120C, VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses

Contextual Info: New Product V30120S, VI30120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses TO-262AA

Contextual Info: New Product V30100S, VI30100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses

Contextual Info: New Product V20100S, VF20100S, VB20100S & VI20100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power

irf9630

Abstract: IRF9631 IRF9632 RF1S9630 MOSFET IRF9630 IRF9633
Contextual Info: HARFRIS S E M I C O N D U C T O R IRF9630, IRF9631, IRF9632, IRF9633, RF1S9630, RF1S9630SM -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs May 1998 Description Features -5.5A and -6.5A, -150V and -200V Linear Transfer Characteristics

IRF540

Abstract: Applications Note of IRF540 irf541 RF1S540SM9A RF1S540SM IRF542 IRF543 irf540 be IRF540 Rg RF1S540
Contextual Info: IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM HARRIS S E M I C O N D U C T O R 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs November 1997 Description Features • 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate

12N60C3

Abstract: HGT1S12N60C3RS T0263AB 12N60C3R
Contextual Info: HGTP12N60C3R, HGT1S12N60C3R, HGT1S12N60C3RS HARRIS S E M I C O N D U C T O R 24A, 600V, Rugged, UFS Series N-Channel IGBTs December 1997 Features Description • 24A, 600V at Tc = 25°C This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as

FP23N06L

Abstract: 23N06LE 23n06
Contextual Info: ? *3 2 £ RFP23N06LE, RF1S23N06LE, RF1S23N06LESM 23A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs S e p te m b e r 1998 Features Description • 23A, 60V T hese are N -C hannel po w e r M O S F E T s m anufactured using the M eg aF E T process. T his process, w h ich uses feature

RFP22N10

Abstract: TA9845
Contextual Info: ASSESS? RFP22N10, RF1S22N10, RF1S22N10SM 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs Aprii 1998 Description Features 22A,100V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti­

T1060

Abstract: VBT1060C-E3/8W J-STD-002 VIT1060C T1060C
Contextual Info: New Product VT1060C, VFT1060C, VBT1060C & VIT1060C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power

T3080S

Abstract: J-STD-002 VIT3080S VT3080S
Contextual Info: New Product VT3080S, VFT3080S, VBT3080S, VIT3080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses

J-STD-002

Abstract: VIT3060G
Contextual Info: New Product VT3060G, VFT3060G, VBT3060G & VIT3060G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power

J-STD-002

Contextual Info: New Product V30120SG, VF30120SG, VB30120SG & VI30120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power

J-STD-002

Abstract: V20120
Contextual Info: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power

vb20200g

Abstract: J-STD-002
Contextual Info: New Product V20200G, VF20200G, VB20200G & VI20200G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.62 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power

20100S

Abstract: J-STD-002 VF20100S
Contextual Info: New Product V20100S, VF20100S, VB20100S & VI20100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power

J-STD-002

Abstract: V40120C VI40120C V4012
Contextual Info: New Product V40120C, VF40120C, VB40120C & VI40120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power

J-STD-002

Abstract: VIT1080C
Contextual Info: New Product VT1080C, VFT1080C, VBT1080C, VIT1080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses

50WQ10G

Contextual Info: Preliminary Data Sheet PD-20683 09/04 50WQ10G SCHOTTKY RECTIFIER 5.5 Amp IF AV = 5.5Amp VR = 100V Description/ Features Major Ratings and Characteristics The 50WQ10G surface mount Schottky rectifier has been designed for applications requiring low forward drop and

J-STD-002

Contextual Info: New Product V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power

MBR20H200CT-E3/45

Abstract: JESD22-B102 J-STD-002 MBR20H200CT MBRF20H200CT SB20H200CT-1
Contextual Info: MBR20H200CT, MBRF20H200CT & SB20H200CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA TO-220AB FEATURES ITO-220AB • Guarding for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop