TO252 CASE Search Results

Contextual Info: SPD07N20 SPU07N20 Preliminary data SIPMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode VDS 200 V R DS on 0.4 Ω 7 A ID • Avalanche rated P-TO251 • dv/dt rated P-TO252 Type Package Ordering Code Packaging SPD07N20 P-TO252

SPD35N10

Abstract: 35n10 P-TO252 Q67042-S4125
Contextual Info: SPD35N10 Preliminary data SIPMOS Power-Transistor Product Summary Feature 100 VDS
N-Channel
Enhancement mode
175°C operating temperature V R DS on 44 m
ID 35 A
Avalanche rated P-TO252
dv/dt rated Type SPD35N10 Package P-TO252 Ordering Code

06n80c3

Abstract: PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS
Contextual Info: SPD06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type

Contextual Info: SPD06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type

Contextual Info: SPD06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type

2N0623

Abstract: S7420 ANPS071E BSPD30N06S2-23 SPD30N06S2-23
Contextual Info: SPD30N06S2-23 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 23 m ID 30 A P- TO252 -3-11 Type Package Ordering Code SPD30N06S2-23 P- TO252 -3-11 Q67060-S7420

06n80c3

Abstract: P-TO252 SPD06N80C3
Contextual Info: SPD06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A P-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated

PN06L13

Contextual Info: SPD50N06S2L-13 OptiMOS =Power-Transistor Product Summary Feature 55 VDS
N-Channel R DS on
Enhancement mode ID
Logic Level V m
12.7 50 A P- TO252 -3-11
Avalanche rated
dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421

2N0615

Abstract: ANPS071E BSPD30N06S2-15 SPD30N06S2-15
Contextual Info: SPD30N06S2-15 OptiMOS
Power-Transistor Product Summary Feature 55 VDS  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated RDS on ID V m 14.7 30 A P- TO252 -3-11 Type Package Ordering Code SPD30N06S2-15 P- TO252 -3-11 Q67040-S4253

2n0680

Abstract: g39 SMD BSPD14N06S2-80 SPD14N06S2-80
Contextual Info: SPD14N06S2-80 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 80 m ID 17 A P- TO252 -3-11 Type Package Ordering Code SPD14N06S2-80 P- TO252 -3-11 Q67060-S7423

D883A

Abstract: D 883 A D883 SPD08P06P SPU08P06P SPU-D08P06P SMD D88
Contextual Info: SPU-D08P06P SIPMOS Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS on ,max 0.3 Ω ID -8.8 A • Avalanche rated • dv /dt rated PG-TO252-3 • 175°C operating temperature P-TO251-3 • Pb-free lead plating; RoHS compliant (PG-TO252)

2N0623

Abstract: INFINEON PART MARKING to252 2N062 smd diode marking G12
Contextual Info: SPD30N06S2-23 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
175°C operating temperature VDS 55 V R DS on 23 m
ID 30 A P- TO252 -3-11
Avalanche rated
dv/dt rated Type SPD30N06S2-23 Package Ordering Code P- TO252 -3-11 Q67060-S7420

2N0615

Abstract: SPD30N06S2-15
Contextual Info: SPD30N06S2-15 OptiMOS =Power-Transistor Product Summary Feature 55 VDS
N-Channel R DS on
Enhancement mode ID
175°C operating temperature V m
14.7 30 A P- TO252 -3-11
Avalanche rated
dv/dt rated Type SPD30N06S2-15 Package Ordering Code P- TO252 -3-11 Q67040-S4253

2N0640

Abstract: BSPD25N06S2-40 SPD25N06S2-40 a6024
Contextual Info: SPD25N06S2-40 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 40 m ID 29 A P- TO252 -3-11 Type Package Ordering Code SPD25N06S2-40 P- TO252 -3-11 Q67060-S7427

2n0680

Abstract: BSPD14N06S2-80
Contextual Info: SPD14N06S2-80 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
175°C operating temperature VDS 55 V R DS on 80 m
ID 17 A P- TO252 -3-11
Avalanche rated
dv/dt rated Type SPD14N06S2-80 Package Ordering Code P- TO252 -3-11 Q67060-S7423

PN06L13

Abstract: ANPS071E BSPD50N06S2L-13 SPD50N06S2L-13
Contextual Info: SPD50N06S2L-13 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID • Logic Level V 12.7 mΩ 50 A P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421

PN06L13

Abstract: PN06L 34Dg ANPS071E BSPD50N06S2L-13 SPD50N06S2L-13 S7421
Contextual Info: SPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • Logic Level V 12.7 mΩ 50 • Avalanche rated A P- TO252 -3-11 • dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421

2N0640

Abstract: MAX408
Contextual Info: SPD25N06S2-40 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
175°C operating temperature VDS 55 V R DS on 40 m
ID 29 A P- TO252 -3-11
Avalanche rated
dv/dt rated Type SPD25N06S2-40 Package Ordering Code P- TO252 -3-11 Q67060-S7427

pn0614

Abstract: Q67060-S7418 smd diode 67A
Contextual Info: SPD50N06S2-14 OptiMOS =Power-Transistor Product Summary Feature 55 VDS
N-Channel R DS on
Enhancement mode ID
175°C operating temperature V m
14.4 50 A P- TO252 -3-11
Avalanche rated
dv/dt rated Type SPD50N06S2-14 Package Ordering Code P- TO252 -3-11 Q67060-S7418

095B3

Abstract: UF5A400D1 diode marking code a2 y2 TO252-3L UF5A400
Contextual Info: UF5A400D1 5A ULTRA-FAST RECTIFIER Features Mechanical Data • • • • • • • Ultra-Fast Die Construction Soft, Fast Switching Capability Low Leakage Current Lead Free Finish, RoHS Compliant Note 1 "Green" Molding Compound (No Br, Sb) Case: TO252-3L

Contextual Info: A Product Line of Diodes Incorporated Green ZXT690BK 45V NPN HIGH GAIN MEDIUM POWER TRANSISTOR Features Mechanical Data • BVCEO > 45V • Case: TO252 DPAK • IC = 3A high Continuous Collector Current • Case Material: Molded Plastic, "Green" Molding Compound.

N3005

Contextual Info: NOT RECOMMENDED FOR NEW DESIGN DMN3005LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance   Low Input Capacitance   Fast Switching Speed Case: TO252 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0

13003D

Abstract: br 13003d transistor 13003d br+13003d
Contextual Info: DXT13003DK 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252 Features Mechanical Data • BVCEO > 450V • • BVCES > 700V • Case Material: Molded Plastic, "Green" Molding Compound • BVEBO > 9V • • • IC = 1.5A high Continuous Collector Current Integrated Anti-Parallel Diode to act as free-wheeling diode

Contextual Info: 1-1-2 Switching Mode Regulator ICs SI-8000TM Series Surface-Mount, Separate Excitation Step-down Switching Mode Regulator ICs •Features ■Absolute Maximum Ratings • Compact surface-mount package TO252-5 Parameter Symbol Ratings Unit VIN 43 V PD1 1.06