TO220AB PACKAGE Search Results

TO220AB PACKAGE Result Highlights (5)

Part	Manufacturer	Description	Download
54ACT825/QKA	Rochester Electronics LLC	54ACT825/QKA - Dual marked (5962-9161101MKA), D-Type Flip-Flop, 5V, 24-CFP	PDF
TPH1R306PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N)	Datasheet
TPH9R00CQH	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)	Datasheet
TPHR8504PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N)	Datasheet
TPH9R00CQ5	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N)	Datasheet

TO220AB PACKAGE Datasheets (7)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TO-220AB Package	International Rectifier	Case Outline and Dimensions	Original	PDF	71.8KB	1
TO-220AB Package	International Rectifier	Case Outline and Dimensions & Part Marking Information	Original	PDF	45.52KB	2
TO-220AB Package	International Rectifier	Case Outline and Dimensions	Original	PDF	23.72KB	1
TO-220AB Package	Intersil	3 LEAD JEDEC TO-220AB PLASTIC PACKAGE	Original	PDF	9.77KB	1
TO-220AB Package	Intersil	3 LEAD JEDEC TO-220AB PLASTIC PACKAGE	Original	PDF	10.36KB	1
TO220AB Package	Unknown	PACKAGE MECHANICAL DATA	Original	PDF	22.24KB	1
TO-220AB Package	Siemens	Package Outlines	Original	PDF	152.54KB	4

TO220AB PACKAGE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BUT11APX equivalent Abstract: BUT11A1 equivalent BU2725DX BU2527 BU506D, BU1506DX, BU2506DF BUT11APX BU4522AX BU2506DF equivalent bu2520dx BU2527DX Contextual Info: DISCRETE SEMICONDUCTORS Selection guide Power Bipolar Transistors 1998 Dec 16 SOT82 SOT78 TO220AB SOT186 BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF SOT186A (isolated TO220AB) SOT199 SOT399 (TOP3D) SOT429 (TO247) SOT430 (TOP3L) TYPICAL APPLICATIONS	Original	o220ab ot186 bu505 bu505d +16ot199 ot399 ot429 ot430 bu505f bu505df but11apx equivalent but11a1 equivalent bu2725dx bu2527 bu506d, bu1506dx, bu2506df but11apx bu4522ax bu2506df equivalent bu2520dx bu2527dx	PDF
Contextual Info: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB TO220AB Description: The NTE236 is a silicon NPN transistor in a TO220AB type package designed for 10−14 watt output power class AB amplifier applications in the HF band. Features:	Original	nte236 27mhz o220ab	PDF
transistor BT136 Abstract: TRANSISTOR bt134 BUJ100 phe13009 transistor BT137 transistor bt136 600e BT134 bt134 transistor BYV42E-200 SOT404 Contextual Info: Power Diodes Ultrafast, Enhanced Ultrafast and Hyperfast Diodes for active power factor correction VRRM V IF(AV) (A) VF (typ) @ 150 °C (V) @ IF (A) t rr (typ) @ 25 °C (ns) SOD59 (TO220AC) SOD113 (2-pin SOT186A) SOT78 (TO220AB) SOT186A (isolated TO220AB)	Original	o220ac od113 ot186a o220ab +14ot226 ot404 ot428 byv29-500 transistor bt136 transistor bt134 buj100 phe13009 transistor bt137 transistor bt136 600e bt134 bt134 transistor byv42e-200 sot404	PDF
SMBJ11CA Abstract: SMBJ15A 13/Altium SBR10200CT SBL2035CT SBR30A50CT SMBJ130A SMBJ130CA SMBJ17A SMBJ14CA Contextual Info: DATE: 11th March, 2011 PCN #: 2034 REV 01 on 4th August, 2011 PCN Title: Qualification of Additional Assembly and Test Site for Select SMA, SMB, SMC, and TO220AB Packaged Devices	Original	o220ab r20u40ct sbr20u60ct sbr20u100ct +16sbr20u150ct sbr3040ct sbr3045ct sbr3045sct sbr3060ct sbr30100ct smbj11ca smbj15a 13/altium sbr10200ct sbl2035ct sbr30a50ct smbj130a smbj130ca smbj17a smbj14ca	PDF
BTB04-600SAP Abstract: S0817MH S1217NH BTA12-700BW BTB04 600SAP BTB04-600SAP equivalent BTB06-700SW btb04600sap s1217mh BTA06-400GP Contextual Info: Thyristors 4-Quadrant Triacs - continued 4-Quadrant Triacs - continued Thyristors ST Microelectronics Cross Reference Guide Silicon Controlled Rectifiers SCRs - continued VDRM (V) IGT (mA) Package ST Part NXP Part 800 35/35/35/70 SOT78 / TO220AB Z0109NN	Original	o220ab z0109nn z0109sa bt131-800e +12z0109na z0109sn btb04-600sap s0817mh s1217nh bta12-700bw btb04 600sap btb04-600sap equivalent btb06-700sw btb04600sap s1217mh bta06-400gp	PDF
F1S30P06 Abstract: RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334 Contextual Info: [ /Title RFG30 P06, RFP30P 06, RF1S30 P06, RF1S30 P06SM /Subject (30A, 60V, 0.065 Ohm, PChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO247, TO220AB, TO262AA, TO263AB) RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM	Original	rfg30 rfp30p rf1s30 p06sm +9o220ab o262aa o263ab rfg30p06 rfp30p06 f1s30p06 rf1s30p06 rf1s30p06sm tb334	PDF
BUK456-60H Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Automotive and general purpose switching applications. PINNING - TO220AB	Original	o220ab buk456-60h	PDF
S12M15-600B Abstract: S12M15600B Contextual Info: LITE-ON SEMICONDUCTOR S12M15600B SCRs 12 AMPERES RMS 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts On-State Current Rating of 12 Amperes RMS at 80℃ Rugged, Economical TO220AB Package	Original	s12m15600b o-220ab o220ab s12m15-600b	PDF
AN7254 Abstract: AN7260 RFP2N12 RFP2N15 TB334 Contextual Info: [ /Title RFP2N 12, RFP2N1 5 /Subject (2A, 120V and 150V, 1.75 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO220AB) /Creator () /DOCIN FO pdfmark RFP2N12, RFP2N15 Semiconductor 2A, 120V and 150V, 1.750 Ohm,	Original	o220ab rfp2n12 rfp2n15 an7254 +2an7260 tb334	PDF
BUK95150-55A Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK95150-55A BUK96150-55A GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using	Original	buk95150-55a buk96150-55a o220ab ot404	PDF
BUK7514-55A Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which	Original	o220ab ot404 buk7514-55a buk7614-55a	PDF
BUK9540-100A Abstract: BUK9640-100A Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK9540-100A BUK9640-100A GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using	Original	buk9540-100a buk9640-100a o220ab ot404	PDF
5n06 Abstract: F1S25N06 302 s1b diode Contextual Info: RFP25N06, RF1S25N06SM Data Sheet 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs [ /Title RFP2 5N06, RF1S2 5N06S M /Subject (25A, 60V, 0.047 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB	Original	rfp25n06 rf1s25n06sm 5n06s o220ab +4o263ab 5n06 f1s25n06 302 s1b diode	PDF
TRANSISTOR BUK9508 Abstract: BUK9508-55A BUK9608-55A transistor smd 412 BE Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features	Original	o220ab ot404 buk9508-55a buk9608-55a +2transistor buk9508 transistor smd 412 be	PDF

BUK9535-55A Abstract: transistor smd 26 BUK953555A Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features	Original	o220ab ot404 buk9535-55a buk9635-55a +2transistor smd 26 buk953555a	PDF
smd transistor 2314 Abstract: tr/smd transistor 2314 Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features	Original	o220ab ot404 buk9516-55a buk9616-55a +2smd transistor 2314 tr/smd transistor 2314	PDF
Diode Mark N10 Abstract: RFP18N10 TA17421 RFM18N08 RFM18N10 RFP18N08 TB334 Contextual Info: [ /Title RFM18 N08, RFM18 N10, RFP18N 08, RFP18N 10 /Subject (18A, 80V and 100V, 0.1 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN FO pdfmark RFM18N08, RFM18N10, RFP18N08, RFP18N10	Original	rfm18 rfp18n o204aa o220ab +7rfm18n08 rfm18n10 rfp18n08 rfp18n10 diode mark n10 ta17421 tb334	PDF
S12M15-600B Contextual Info: LITE-ON SEMICONDUCTOR S12M15-B SERIES SCRs 12 AMPERES RMS 400 thru 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts On-State Current Rating of 12 Amperes RMS at 80℃ Rugged, Economical TO220AB Package	Original	s12m15-b o-220ab o220ab s12m15-600b	PDF
TN22-1600D Abstract: triac sot23 IGNITION WITH SCR P0130AL triac 1200 triac scr circuit ICC01-400B5 electric fence sot82 sot194 Contextual Info: SCR & TRIAC ASDTM : Application Specific Discretes TO220AB SWITCH MODE POWER SUPPLY ASDs Tj max = 110 °C except AVS08CB: 125 °C IT(RMS) +-VDRM ITSM Type IDRM @ VDRM @ Tj max AVS kit Suffix VTM @ ITM Comments Package max max (V) (A) (V) (A) (mA) AVS08 5	Original	o220ab avs08cb avs08 avs1bcp08 +13avs10cb avs2acp08 avs12cb tn22-1600d triac sot23 ignition with scr p0130al triac 1200 triac scr circuit icc01-400b5 electric fence sot82 sot194	PDF
IRF540G Abstract: Application Note of IRF540 IRF540 T1 IRF540 RF1S540SM RF1S540SM9A Contextual Info: IRF540, RF1S540SM Data Sheet 28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs [ /Title IRF54 0, RF1S5 40SM /Subject (28A, 100V, 0.077 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB ) /Creator ()	Original	irf540 rf1s540sm irf54 o220ab +5o263ab irf540g application note of irf540 t1 irf540 rf1s540sm9a	PDF
BUK9528-100A Abstract: BUK9628-100A Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK9528-100A BUK9628-100A GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using	Original	buk9528-100a buk9628-100a o220ab ot404	PDF
Contextual Info: LITE-ON SEMICONDUCTOR S12M15-B SERIES SCRs 12 AMPERES RMS 400 thru 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts On-State Current Rating of 12 Amperes RMS at 80℃ Rugged, Economical TO220AB Package	Original	s12m15-b o-220ab o220ab 40rent	PDF
Contextual Info: LITE-ON SEMICONDUCTOR S12M15-B SERIES SCRs 12 AMPERES RMS 400 thru 800 VOLTS Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES B Blocking Voltage to 800 Volts On-State Current Rating of 12 Amperes RMS at 80℃ Rugged, Economical TO220AB Package	Original	s12m15-b o-220ab o220ab	PDF
Contextual Info: LITE-ON SEMICONDUCTOR S12M15-B SERIES SCRs 12 AMPERES RMS 400 thru 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts On-State Current Rating of 12 Amperes RMS at 80℃ Rugged, Economical TO220AB Package	Original	s12m15-b o-220ab o220ab	PDF

TO220AB PACKAGE Search Results

TO220AB PACKAGE Result Highlights (5)

TO220AB PACKAGE Datasheets (7)

TO220AB PACKAGE Datasheets Context Search

BUT11APX equivalent

transistor BT136

SMBJ11CA

BTB04-600SAP

F1S30P06

BUK456-60H

S12M15-600B

AN7254

BUK95150-55A

BUK7514-55A

BUK9540-100A

5n06

TRANSISTOR BUK9508

BUK9535-55A

smd transistor 2314

Diode Mark N10

S12M15-600B

TN22-1600D

IRF540G

BUK9528-100A