TO18 CASE Search Results

TO18 package

Abstract: Aluminum alloy 8053 to18 case ALLOY 52 to18 NTE412 thermal resistance case heat sink
Contextual Info: NTE412 Hardware Heat Sink for TO18 Type Package Description: The NTE412 is a very low cost 1-peice heat sink for plastic “D”, plastic TO18, and metal can TO18 type transistors. Unit presses onto case requiring no special assembly tool and can be installed after as-

IR photodiode sensor

Abstract: PSS1-7-TO18 PIN photodiode 500 nm
Contextual Info: DATA SHEET PSS1-7-TO18 SILICON PHOTODIODE TYPE PSS1-7-TO18 PSS1-7-TO18 is a PIN Silicon PHOTODIODE with an Active Area 1.0 mm2. It combines excellent blue light sensitivity with more than average Near IR response. This product is packaged in a hermetically

2n5268

Abstract: 2N5267 2N5265 KK4360 2N3329 2N3330 2N3331 2N5021 FP22 to92 2N5266
Contextual Info: BVgss Ciss Type Case Geometry Min Max Number Style V (pF) 2N2608 2N2609 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 KK4343 KK4360 KK4381 KK4382 2N5020 2N5021 KK5033 2N5265 2N5266 2N5267 2N5268 2N5460 2N5461 2N5462 UC451 TO18 TO18 TO72 TO72 TO72 TO72

2N3055 TO220

Abstract: NPN Transistor 2N3055 darlington 100 amp npn darlington power transistors transistor BC107 specifications tip122 tip127 audio amp NPN Transistor TO92 10 amp npn darlington power transistors transistor 2n3053 DATASHEET Transistor BC107 2N3055 NPN Transistor
Contextual Info: TRANSISTOR SPECIFICATIONS - A TYPICAL TABLE FROM A CATALOGUE Transistor Polarity Number BC107 BC108 2N3904 ZTX300 2N3053 BFY51 TIP31A 2N3055 Case IC max VCE hFE Power NPN NPN NPN NPN NPN NPN NPN NPN Style TO18 TO18 TO92 E-line TO39 TO39 TO220 TO3 mA 100

VN10K-TO18

Contextual Info: VN10K-TO18 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOSFET 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) D 12.7 (0.500) min. 0.48 (0.019) 0.41 (0.016) dia. G S 2.54 (0.100) Nom. 3 1 2 TO18 PACKAGE

DUV-HL18M

Contextual Info: rev.2.0 07.05.15 DUV-HL18M • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO18 metal can Hemispherical SiO2 lens Beam angle 24 deg. Description DUV-HL18M is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO18 package, utilizing a

Contextual Info: rev.2.0 07.05.15 DUV-HL18W • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO18 metal can Hemispherical SiO2 lens Beam angle 40 deg. Description DUV-HL18W is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO18 package, utilizing a

Contextual Info: rev.2.0 07.05.15 DUV-HL46N • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO18 metal can Hemispherical SiO2 lens Beam angle 6 deg. Description DUV-HL46N is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO18 package, utilizing a

Contextual Info: rev.2.0 07.05.15 DUV-FW18 • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO18 metal can Flat SiO2 window Beam angle 113 deg. Description DUV-FW18 is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO18 package, utilizing a flat quartz

Contextual Info: LIE-216-# pyroelectric detector, small Description: single channel; TO18 housing; small chip size; thermal compensation; JFET; voltage mode; HOUSING: PIN ASSIGNMENT: Drain Source + - - + Gnd Case FREQUENCY RESPONSE: relative Responsivity [%] 100 10 1 1 10

Contextual Info: LIE-202-# pyroelectric detector, small Description: single channel; TO18 housing; small chip size; JFET; voltage mode; HOUSING: PIN ASSIGNMENT: Drain Source + - Gnd Case FREQUENCY RESPONSE: relative Responsivity [%] 100 10 1 1 10 Frequency [Hz] 100 Frequency [Hz]

tsts 7503

Abstract: TSTS750 TSTS7500 TSTS7501 TSTS7502 TSTS7503
Contextual Info: TSTS750. GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS750. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their flat glass windows make them ideal for use with external optics.

NTE123A

Abstract: NTE159M
Contextual Info: NTE123A NPN & NTE159M (PNP) Silicon Complementary Transistors General Purpose Description: The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transistors in a TO18 type case designed for applications such as medium–speed switching and amplifiers from

TSTS730

Abstract: TSTS7300 TSTS7301 TSTS7302 TSTS7303
Contextual Info: TSTS730. GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a high radiant intensity without external optics.

TSTA7500

Contextual Info: TSTA7500 GaAlAs IR Emitting Diode, Hermetically Sealed TO18 Case Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its flat glass window makes it ideal for use with external optics.

Contextual Info: TSTS730. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a high radiant intensity without external optics.

Contextual Info: TSTS750. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS750. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their flat glass windows make them ideal for use with external optics.

TSTS7301

Abstract: TSTS7302 TSTS7303 TSTS730 TSTS7300
Contextual Info: TSTS730. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a high radiant intensity without external optics.

Contextual Info: TSTS730. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a high radiant intensity without external optics.

TSTS 7102

Abstract: TSTS710 TSTS7101 TSTS7100 TSTS7102 TSTS7103
Contextual Info: TSTS710. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external optics.

TSTS7502

Abstract: TSTS7503 TSTS750 TSTS7500 TSTS7501
Contextual Info: TSTS750. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS750. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their flat glass windows make them ideal for use with external optics.

tsts 7503

Abstract: TSTS750 TSTS7500 TSTS7501 TSTS7502 TSTS7503
Contextual Info: TSTS750. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS750. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their flat glass windows make them ideal for use with external optics.

Contextual Info: TSTS710. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external optics.

TSTA7100

Contextual Info: TSTA7100 GaAlAs IR Emitting Diode, Hermetically Sealed TO18 Case Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its glass lens provides a very high radiant intensity without external optics.