TO18 CASE Search Results
TO18 CASE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CS-DSDMDB09MF-002.5 |
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Amphenol CS-DSDMDB09MF-002.5 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft | |||
CS-DSDMDB09MM-025 |
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Amphenol CS-DSDMDB09MM-025 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft | |||
CS-DSDMDB15MM-005 |
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Amphenol CS-DSDMDB15MM-005 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 5ft | |||
CS-DSDMDB25MF-50 |
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Amphenol CS-DSDMDB25MF-50 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Female 50ft | |||
CS-DSDMDB37MF-015 |
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Amphenol CS-DSDMDB37MF-015 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Female 15ft |
TO18 CASE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TO18 package
Abstract: Aluminum alloy 8053 to18 case ALLOY 52 to18 NTE412 thermal resistance case heat sink
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NTE412 NTE412 TO18 package Aluminum alloy 8053 to18 case ALLOY 52 to18 thermal resistance case heat sink | |
IR photodiode sensor
Abstract: PSS1-7-TO18 PIN photodiode 500 nm
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PSS1-7-TO18 PSS1-7-TO18 IR photodiode sensor PIN photodiode 500 nm | |
2n5268
Abstract: 2N5267 2N5265 KK4360 2N3329 2N3330 2N3331 2N5021 FP22 to92 2N5266
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2N2608 2N2609 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 KK4343 2n5268 2N5267 2N5265 KK4360 2N3329 2N3330 2N3331 2N5021 FP22 to92 2N5266 | |
NTE4011B
Abstract: NTE4001B NTE955M NTE4013B NTE7486 NTE7490 NTE956 NTE4081B NTE931 NTE4069
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TE7475 NTE992 NTE7476 NTE2013 NTE7486 NTE4001B NTE7490 NTE4011B NTE74121 NTE4013B NTE955M NTE956 NTE4081B NTE931 NTE4069 | |
2N3055 TO220
Abstract: NPN Transistor 2N3055 darlington 100 amp npn darlington power transistors transistor BC107 specifications tip122 tip127 audio amp NPN Transistor TO92 10 amp npn darlington power transistors transistor 2n3053 DATASHEET Transistor BC107 2N3055 NPN Transistor
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BC107 BC108 2N3904 ZTX300 2N3053 BFY51 TIP31A 2N3055 BC178 BC559 2N3055 TO220 NPN Transistor 2N3055 darlington 100 amp npn darlington power transistors transistor BC107 specifications tip122 tip127 audio amp NPN Transistor TO92 10 amp npn darlington power transistors transistor 2n3053 DATASHEET Transistor BC107 2N3055 NPN Transistor | |
VN10K-TO18Contextual Info: VN10K-TO18 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOSFET 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) D 12.7 (0.500) min. 0.48 (0.019) 0.41 (0.016) dia. G S 2.54 (0.100) Nom. 3 1 2 TO18 PACKAGE |
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VN10K-TO18 300ms VN10K-TO18 | |
DUV-HL18MContextual Info: rev.2.0 07.05.15 DUV-HL18M • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO18 metal can Hemispherical SiO2 lens Beam angle 24 deg. Description DUV-HL18M is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO18 package, utilizing a |
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DUV-HL18M DUV-HL18M | |
Contextual Info: rev.2.0 07.05.15 DUV-HL18W • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO18 metal can Hemispherical SiO2 lens Beam angle 40 deg. Description DUV-HL18W is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO18 package, utilizing a |
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DUV-HL18W DUV-HL18W | |
Contextual Info: rev.2.0 07.05.15 DUV-HL46N • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO18 metal can Hemispherical SiO2 lens Beam angle 6 deg. Description DUV-HL46N is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO18 package, utilizing a |
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DUV-HL46N DUV-HL46N | |
Contextual Info: rev.2.0 07.05.15 DUV-FW18 • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO18 metal can Flat SiO2 window Beam angle 113 deg. Description DUV-FW18 is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO18 package, utilizing a flat quartz |
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DUV-FW18 DUV-FW18 | |
Contextual Info: LIE-216-# pyroelectric detector, small Description: single channel; TO18 housing; small chip size; thermal compensation; JFET; voltage mode; HOUSING: PIN ASSIGNMENT: Drain Source + - - + Gnd Case FREQUENCY RESPONSE: relative Responsivity [%] 100 10 1 1 10 |
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LIE-216-# 100nF lie-216 | |
Contextual Info: TSTS750. VISHAY Vishay Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS750. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their flat glass windows make them |
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TSTS750. D-74025 08-Apr-04 | |
tsts 7503Contextual Info: TSTS750. VISHAY Vishay Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS750. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their flat glass windows make them |
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TSTS750. D-74025 11-May-04 tsts 7503 | |
Contextual Info: LIE-202-# pyroelectric detector, small Description: single channel; TO18 housing; small chip size; JFET; voltage mode; HOUSING: PIN ASSIGNMENT: Drain Source + - Gnd Case FREQUENCY RESPONSE: relative Responsivity [%] 100 10 1 1 10 Frequency [Hz] 100 Frequency [Hz] |
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LIE-202-# 100nF lie-202 | |
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tsts 7503
Abstract: TSTS750 TSTS7500 TSTS7501 TSTS7502 TSTS7503
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TSTS750. D-74025 15-Jul-96 tsts 7503 TSTS750 TSTS7500 TSTS7501 TSTS7502 TSTS7503 | |
NTE123A
Abstract: NTE159M
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NTE123A NTE159M 300MHz NTE123A NTE159M | |
Contextual Info: TSTS730. VISHAY Vishay Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a high |
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TSTS730. D-74025 11-May-04 | |
Contextual Info: TSTA7500 VISHAY Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its flat glass window makes it |
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TSTA7500 TSTA7500 D-74025 06-May-04 | |
Contextual Info: TSTA7100 VISHAY Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a very |
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TSTA7100 TSTA7100 D-74025 08-Apr-04 | |
TSTA7100Contextual Info: TSTA7100 Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its glass lens provides a very |
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TSTA7100 TSTA7100 D-74025 20-May-99 | |
TSTA7300Contextual Info: TSTA7300 Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its glass lens provides a high |
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TSTA7300 TSTA7300 D-74025 20-May-99 | |
TSTA7500Contextual Info: TSTA7500 Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its flat glass window makes it |
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TSTA7500 TSTA7500 D-74025 20-May-99 | |
Contextual Info: TSTA7300 VISHAY Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high |
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TSTA7300 TSTA7300 D-74025 06-May-04 | |
Contextual Info: TSTA7100 VISHAY Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a very |
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TSTA7100 TSTA7100 D-74025 06-May-04 |