TO-5 PACKAGE 2N5154 Search Results

2N5154

Abstract: 2N5152
Contextual Info: NPN Power Silicon Transistor 2N5152, 2N5152L & 2N5154, 2N5154L Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/544 • TO-5 Package: 2N5152L, 2N5154L TO-39 TO-205AD Package: 2N5152, 2N5154 Maximum Ratings (TC = +25°C unless otherwise noted)

Contextual Info: NPN Power Silicon Transistor 2N5152, 2N5152L & 2N5154, 2N5154L Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/544 • TO-5 Package: 2N5152L, 2N5154L TO-39 TO-205AD Package: 2N5152, 2N5154 Maximum Ratings (TC = +25°C unless otherwise noted)

2n5154

Abstract: 2N5152
Contextual Info: NPN Power Silicon Transistor 2N5152, 2N5152L & 2N5154, 2N5154L Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/544 • TO-5 Package: 2N5152L, 2N5154L TO-39 TO-205AD Package: 2N5152, 2N5154 Maximum Ratings (TC = +25°C unless otherwise noted)

IC IL 117

Abstract: 2N5011 2N5339A transistor sit TRANSISTOR 800h 2N5010 2N5012 2N5013 2N5152 2N5154
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 IC/ VCE min/max @ A/V PACKAGE DEVICE TYPE VcEO (sus) VOLTS Ic (max) AMPS NPN TO-39 2N4150A 70 5.0 40-120@5/5 .6@5/,5 2N5010 500h .5 30-180@.025/10 2N5011 600h .5 2N5012 700h 2N5013 ¡¡I NPN TO-5

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 VcEO Ic sus (max) VOLTS AMPS hpE@i<yvCE ^CE(sit) PACKAGE DEVICE TYPE (min/max @ A/V) NPN TO-39 2N4150A 70 5.0 40-120@5/5 .6@5/,5 2N5010 500h .5 30-180@.025/10 2N5011 600h .5 2N5012 700h 2N5013 @ Ic/I b

Contextual Info: NPN Power Silicon Transistor 2N5152, 2N5152L & 2N5154, 2N5154L Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads Si per MIL-PRF-19500/544 • TO-5 Package: 2N5152L, 2N5154L TO-39 (TO-205AD) Package: 2N5152, 2N5154 Maximum Ratings (TC = +25°C unless otherwise noted)

SILICON TRANSISTOR CORP

Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060
Contextual Info: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP T*VS*07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V

NSP5665

Abstract: sat 1205
Contextual Info: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *

st smd IC marking code

Abstract: 2N5154ESYHRT
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 3 1 • Hi-Rel NPN bipolar transistor • Linear gain characteristics

520301006R

Abstract: 2N5154RESYHRG
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor • Linear gain characteristics

JANS2N5154

Abstract: 2N5154U3
Contextual Info: JANS 2N5152L and JANS 2N5154L Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION These RHA level 2N5152L and 2N5154L silicon transistor devices are military Radiation

2N5154U3

Abstract: 2N5152U3 SMD-05
Contextual Info: JANS 2N5152U3 and JANS 2N5154U3 Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION These RHA level 2N5152U3 and 2N5154U3 silicon transistor devices are military Radiation

520301006

Abstract: Table of smd IC marking codes smd transistor marking A2 TRANSISTOR SMD MARKING CODES ESCC 5203/010 2N5154S1 st smd diode marking code NV SMD TRANSISTOR smd diode order marking code stmicroelectronics smd marking codes list
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 2 TO-39 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified

STMicroelectronics smd marking code

Abstract: smd transistor marking A2 TRANSISTOR SMD MARKING CODE A1 smd transistor marking B3 transistor smd marking 94 TRANSISTOR SMD MARKING CODES marking code 51 SMD Transistor st smd IC marking code NPN TRANSISTOR SMD MARKING CODE B2 TRANSISTOR SMD MARKING CODE d2
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 2 TO-39 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified

Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet − production data Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 2 TO-39 3 1 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics

marking code 51 SMD Transistor

Abstract: STMicroelectronics smd marking code st smd IC marking code smd transistor marking A2 smd transistor marking B3 SMD TRANSISTOR MARKING code TC NPN TRANSISTOR SMD MARKING CODE B2 TRANSISTOR SMD MARKING CODE A1 smd marking code stmicroelectronics ic smd 851
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet − production data Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 2 TO-39 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics

Contextual Info: JANS 2N5152 and JANS 2N5154 Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION These RHA level 2N5152 and 2N5154 silicon transistor devices are military Radiation

2N5154

Abstract: 2N5154U3 MIL-PRF-19500 2N5154
Contextual Info: JANS 2N5152 and JANS 2N5154 Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION These RHA level 2N5152 and 2N5154 silicon transistor devices are military Radiation

Contextual Info: 2N5154XSMD MECHANICAL DATA Dimensions in mm inches 3 2 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 DESCRIPTION 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) SMD (TO-276AB) The 2N5154XSMD is a silicon expitaxial planar NPN transistors in a Ceramic Surface

Contextual Info: 2N5154XSMD MECHANICAL DATA Dimensions in mm inches 3 2 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 DESCRIPTION 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) SMD (TO-276AB) The 2N5154XSMD is a silicon expitaxial planar NPN transistors in a Ceramic Surface

Contextual Info: 2N5154XSMD1-SQR-A MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM VOLTAGE SWITCH 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 )

BUX98PI

Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
Contextual Info: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490

Contextual Info: 2N5152 2N5154 MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM VOLTAGE SWITCHES 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. DESCRIPTION 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. The 2N5152 and the 2N5154 are silicon

2N5154SMD

Abstract: TO-276
Contextual Info: 2N5154SMD MECHANICAL DATA HIGH SPEED NPN SWITCHING TRANSISTOR FOR HIGH RELIABILITY APPLICATIONS Dimensions in mm inches 0.89 (0.035) min. 3.60 (0.142) Max. 3 2 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421)