TO-3P PACKAGE Search Results

TO-3P-5L

Abstract: TO-3P-5L package ydtu
Contextual Info: TO-3P-5L TU Package Dimensions TO-3P-5L (TU) Dimensions in Millimeters 2002 Fairchild Semiconductor Corporation June 2002, Rev. C TO-3P-5L (YDTU) Package Dimensions TO-3P-5L (YDTU) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation June 2002, Rev. A

PRSS0003ZA-A

Abstract: 3p transistor PRSS0004ZE-A TO3PFMV
Contextual Info: PM519 Package name PVC Polyvinyl chloride Treatment Antistatic Magazine material Maximum storage No. Transistor/Magazine Packing form TO-3P PRSS0004ZE-A TO-3P, TO-3PV 30 Non dry pack TO-3PFM PRSS0003ZA-A TO-3PFM, TO-3PFMV 30 Non dry pack Unit : mm +2 -2

2SK1778

Abstract: 27.145 2SK1296 2SJ172 2SJ173 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302
Contextual Info: HITACHI 9 Table 6 : DIII-L Series Typical Characteristics Cont'd Electrical Characteristics typ. Absolute Maximum Ratings Package TO-220AB TO-220FM T0-3P T0-3P-FM Type Number 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK1301 2SK1302 2SJ247

USD4545C

Abstract: DSD4545C 34ba IJSD4540C USD4530C USD4540C TO-3P package K042 l-071 k 042
Contextual Info: POWER SCHOTTKY RECTIFIERS USD4530C USD4540C USD4545C 45A Av, Up to 45V FEATURES • Economical Convenient TO-3P Package • Insulated M ounting Hole • Can Be Clip Mounted DESCRIPTION The USD4530C Series, in the econom ical, convenient TO-3P package, is specifically

j13009

Contextual Info: FJA13009 High-Voltage Switch Mode Application Features • High-Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-3P 1.Base 2.Collector 3.Emitter Ordering Information Part Number Marking Package Packing Method FJA13009TU J13009 TO-3P

R811

Abstract: TO247AD TO247AD package TO-247ad FS 0245
Contextual Info: TO-3P/TO-247AD Package Dimensions TO-3P/TO-247AD FS PKG Code R8 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 5.6 0.645(16.4) 0.625(15.9) 0.245(6.2) 0.225(5.7) 0.203(5.16) 0.193(4.90)

300W TRANSISTOR AUDIO AMPLIFIER

Abstract: MG6331 1455 audio output TRANSISTOR NPN npn transistor SEMELAB LE17 MG9411 "NPN Transistor" MG6331-R
Contextual Info: SILICON EPITAXIAL PLANAR NPN TRANSISTOR MG6331, MG6331-R • TO-3P Plastic Package • Complimentary PNP – MG9411 • Designed specifically for audio power amplifier applications • Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package

2SK1778

Abstract: 2SK1776 peh 165 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167
Contextual Info: 11 HITACHI Table 7 : DIII-H Series Typical Characteristics Cont'd Package r I L Type Number VDSS VGSS V (V) 250 r •1 r TO-3P TO-3P-FM 2SK1671 2SK1401 2SK1401A 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK 1170 2SK1515 2SK1516

300W TRANSISTOR AUDIO AMPLIFIER

Abstract: "PNP Transistor" MG9411 1455 properties of transistor pnp 9099 SEMELAB LE17 MG6331
Contextual Info: SILICON EPITAXIAL PLANAR PNP TRANSISTOR MG9411, MG9411-R • TO-3P Plastic Package • Complimentary NPN – MG6331 • Designed specifically for audio power amplifier applications • Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package

084I

Contextual Info: POWER SCHOTTKY RECTIFIERS USD4030S USD4040S USD4045S 80A Pk, Up to 45V FEATURES DESCRIPTION • economical Convenient TO-3P Package • Insulated Mounting Hole • Can Be Clip Mounted The U S D 4 0 0 0 S Series, in the economical, convenient TO-3P package, is specifically designed

3102V

Abstract: mos n fet e power mos fet mos 2 gate
Contextual Info: Package Outline IPower MOS FET 26 POWER MOS FET TO-3P N <i3 310 ' 1- V 'y , t e < I * H OSO 3 1 +0 3 1 1 0-0 25 l " 5 « IO Z < ì ?0 5MAX 210 2 5 <5±0 2 n — l i ) 4 SMAX « ì TO-3P(L) TP-3P(IS) l i 9MAX i O -li É 1. GATE 1. GATE 2. DRAIN(HEAT SIN K)

Contextual Info: Schottky Barrier Rectifiers Schottky Barrier Rectifiers DC Block Voltage VRM V Average Rectified Forward Current (A) Maximum Instaneous Forward Voltage (VF) PJ30C40 40 30 ¡Ø0.55 TO-3P PJ20C40 40 20 ¡Ø0.55 TO-3P, TO-220 PJ16C40 40 16 ¡Ø0.55 TO-220, TO-263

SC-65

Abstract: PRSS0004ZE-A 3p transistor
Contextual Info: Previous Code TO-3P / TO-3PV RENESAS Code PRSS0004ZE-A 15.6 ± 0.3 1.0 φ3.2 ± 0.2 5.0 ± 0.3 JEITA Package Code SC-65 MASS[Typ.] 5.0g Unit: mm 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.6 2.0 1.4 Max 2.8 18.0 ± 0.5 Package Name TO-3P 1.0 ± 0.2

Contextual Info: Ordering number : ENA1769A WPB4002 N-Channel Power MOSFET http://onsemi.com 600V, 23A, 0.36Ω, TO-3P-3L Features • • • Reverse recovery time trr=115ns typ Input capacitance Ciss=2200pF (typ) ON-resistance RDS(on)=0.28Ω (typ) 10V drive • TO-3P-3L

Contextual Info: Ordering number : ENA2235 NDTL03N150C N-Channel Power MOSFET 1500V, 2.5A, 10.5Ω, TO-3P-3L http://onsemi.com Features • On-resistance RDS on =8Ω(typ.) • Input Capacitance Ciss=650pF(typ.) • 10V drive Specifications TO-3P-3L Absolute Maximum Ratings at Ta = 25°C

Contextual Info: RECTIFIERS UES4505S UES4510S UES4515S High Efficiency, 45A, 50-150V FEATURES • Economical Convenient TO-3P Package DESCRIPTION The UES4505S Series., in the eccn om ical, co-wenient IO 3P packa^c, is sp ecifically designed "or operation in power sw itching circu ity *o freq u en cies in excess of 100kHz.

ss 050a

Abstract: 45a 926 UES4505S UES4510S UES4515S
Contextual Info: RECTIFIERS UES4505S UES4510S UES4515S High Efficiency, 45A, 50-150V FEATURES DESCRIPTION • E conom ical C o nvenient The UES^I505S Series, in th e e c o n o m ic a i, c o n v e n ie n t TO 3P p a c k a g c , is s p e c ific a lly TO-3P Package * insulated Mounting Hole

SN30SC4

Abstract: 822 smd SMD 741 SN30SC
Contextual Info: SCHOTTKY BARRIER DIODES High-frequency rectifying 1Z E-pack STO-220 1Z SMD E-pack STO-220 FTO-220 ITO-220 TO-220 MTO-3P ITO-3P Twin Diodes Absolute Maximum Ratings VRM Type No. Electrical Characteristics Tstg Tj Conditions Tc [V] S1ZAS4 6 D4SC6M D5SC4M 4MR

Contextual Info: HIGH SPEED SWITCHING TRANSISTORS FX series FTO-220 ITO-220 TO-220 ITO-3P MTO-3L MTO-3P Bipolar transistors NPN Absolute Maximum Ratings Electrical Characteristics VRM VCEO VEBO IC IB PT Tstg TJ VCEO (sus) (min) [V] [V] [V] [A] [A] [W] [˚C] [˚C] [V] 3 1

2SA1093

Abstract: 2SC2563
Contextual Info: Inchange Semiconductor Product Specification 2SA1093 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SC2563 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier applicatios PINNING PIN DESCRIPTION

2SC2563

Abstract: 2SA1093
Contextual Info: SavantIC Semiconductor Product Specification 2SA1093 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SC2563 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier applicatios PINNING PIN DESCRIPTION

2SD718

Abstract: 2sd718 amplifier AMPLIFIER 2SD718 2SB688
Contextual Info: Inchange Semiconductor Product Specification 2SD718 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P I package ・Complement to type 2SB688 APPLICATIONS ・Power amplifier applications ・Recommend for 45~50W audio frequency amplifier output stage

2SD2386

Abstract: 2SB1557 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION •With TO-3P I package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION

2SD2386

Abstract: 2SB1557 npn DARLINGTON 10A
Contextual Info: Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION •With TO-3P I package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION