TO-263-7 PACKAGE Search Results

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223

tsop 338

Contextual Info: Assembly Base List PACKAGE TSSOP-8 SOD-323 SOT-323 SOT-23 SC-59 SOT-89 SIP-3 SIP-4 SOT-25 SOT-26 TSOP-5 TSOP-6 SOT-28 SOT-223 SOP-5/7/8/10 SOP-8Expose SSOP-14 PL-4/S-4 TO-92 P-DIP-8 P-DIP-14/16 MSOP-8 MSOP-10 TO-220/262/263-3/5 TO-251/252 TO-220/263-3 TO-251/252

220N04T2

Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA220N04T2-7 VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) (IXTA.7) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V

220N04

Contextual Info: Preliminary Technical Information Trench T2TM Power MOSFET IXTA220N04T2-7 VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) (IXTA.7) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40

T230N

Abstract: IXFA230N075T2 IXFA230N075T2-7
Contextual Info: Advance Technical Information IXFA230N075T2-7 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 = 75V = 230A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (7-lead) Symbol Test Conditions VDSS TJ = 25°C to 175°C

220N04

Contextual Info: TrenchT2TM Power MOSFET VDSS ID25 IXTA220N04T2-7 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V

Contextual Info: TrenchMVTM Power MOSFET VDSS ID25 IXTA130N10T7 = 100V = 130A Ω ≤ 9.1mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) (IXTA.7) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA260N055T2-7 VDSS ID25 = 55V = 260A Ω ≤ 3.3mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: User's Guide SNVA178C – November 2006 – Revised April 2013 AN-1504 LP38853S-ADJ Evaluation Board 1 Introduction This board is designed to allow the evaluation of the LP38853S-ADJ Voltage Regulator. Each board is assembled and tested in the factory. This evaluation board has the TO-263 7-lead package mounted, and

Contextual Info: TrenchMVTM Power MOSFET VDSS ID25 IXTA180N085T7 = 85V = 180A Ω ≤ 5.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 85 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

Single

Contextual Info: SSS1004A7 Main Product Characteristics VDSS 100V RDS on 3.0mΩ (typ.) ID 180A ① 1, Gate 2~3,5~7 Source 4,8 Drain TO-263-7L Schematic diagram Pin Assignment Features and Benefits   Advanced Process Technology Special designed for PWM, load switching and

TS317CP

Abstract: TS7805
Contextual Info: TS317 3-Terminal Adjustable Output Positive Voltage Regulator TO-263 Pin assignment: 1. Adjustable 2. Output 3. Input Heatsink surface connected to pin 2 Pin assignment: SOP-8 1. Adjustable 5. N/C 2. Output 6. Output 3. Output 7. Output 8. N/C 4. Input Output Voltage Range

Contextual Info: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7604-40A 1 .2 7 -0+ 0.1.1 TO-263 Features TrenchMOSTM technology Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2

Contextual Info: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7606-55A TO-263 TrenchMOS TM 1 .2 7 -0+ 0.1.1 Features technology Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2

smd rgs

Abstract: ld smd transistor smd 2U SMD Transistor nc KUK7607-55B
Contextual Info: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7607-55B TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 Standard level compatible. 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2

ic 7446

Abstract: IC 7446 A data sheet ic 7446 diode 7446 IC 7446 data sheet smd rgs KUK7607-30B 7446 ic 7446 data sheet ld smd transistor
Contextual Info: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7607-30B TO-263 1 .2 7 -0+ 0.1.1 Features Very low on-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2

Contextual Info: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7606-75B TO-263 1 .2 7 -0+ 0.1.1 Features Very low on-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2

Contextual Info: Transistors IC SMD Type TrenchMOSTM transistor Standard level FET KUK7605-30A 1 .2 7 -0+ 0.1.1 TO-263 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 2 .5 4 -0+ 0.2.2 0.1max +0.1 1.27-0.1 1 5 .2 5 -0+ 0.2.2 5 .6 0 +0.1 1.27-0.1

7-Lead

Contextual Info: Package Dimensions M Package 7-Lead TO-263 A K E B S M H P L W D G N U V C R MILLIMETERS POS MAX MIN A 10.05 10.31 B 8.28 8.53 C 4.31 4.57 D 0.66 0.91 E 1.14 G 1.40 1.27 ref H 14.73 15.75 K 1.40 1.68 L 0.00 0.25 M 2.49 2.74 N 0.43 0.58 P 2.29 2.79 R 0ø

56088

Contextual Info: Tem ic SUP/SUB75P03-08 S em i co n d u c t or s P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) -3 0 I d (A) r DS(on) ( ^ ) 0.008 -7 5 a T0-220AB o TO-263 < ni 1 n DRAIN connected to TAB G D S Top View GD S o D SUB75P03-08 Top View SUP75P03-08

CS-263

Contextual Info: C S -2 6 3 SILICON MONOLITHIC LINEAR AM PLIFIER Low Level See S tandard Package C o n fig u ra tio n S ketch No. 7 (TO -72 Metal Can) on pages 4 & 5. D E S C R IP T IO N The CS-263 is a silic o n m o n o lith ic in te g ra te d c irc u it a m p lifie r in a T O -72 package.

pse jet THERMAL FUSE

Abstract: pse jet 250v 2a T1 2A 250V Jet 1A 250v fuse PS Jet 2A 250v fuse Jet 2A 250v fuse Jet 4A 250v fuse pse jet 062 THERMAL FUSE Littelfuse 3A 250v fuse
Contextual Info: Axial Lead & Cartridge Fuses PICO ll > Very Fast-Acting > 263 Series 263 Series, PICO ® PS E II 250 Volt, Very Fast-Acting Fuse Description The PICO® II 263 Series Fuse is a specially designed axial leaded fuse that achieves a 250V rating in a small package.

SC616AYB

Abstract: imiSC616 sc616ay
Contextual Info: IMISC616A System Clock Generator May 1996 m P R O D U C T FEA TURES Supports PCI system board designs P54, P55, and P6 • Integrates system clocks and distribution buffers ■ Supports 5V or 3.3V on ECLK and B1out* ■ 60 mA buffer switching current ■ 28 Pin SSOP package for minimum

photo transistor L14F

Abstract: photo transistor 2n5777 2N5779 L1402 L14F 2N5780 L14A502 L14f photo transistor L14B1 photo transistor L14e2
Contextual Info: OPTO ELECTRONICS DETECTORS— PHOTOTRANSISTORS Photo Current @ H = Tungsten 2mW/cm2 @ 2870° K II Min. mA JEDEC No. GE Type: Rise 8, Fall Times Typical Photo Current GaAs Source II Mat. (mA) II Min. (mA) II Max. (mA) V e to tf U se e) Min. Package Outline