TO-263-7 PACKAGE Search Results

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223

tsop 338

Contextual Info: Assembly Base List PACKAGE TSSOP-8 SOD-323 SOT-323 SOT-23 SC-59 SOT-89 SIP-3 SIP-4 SOT-25 SOT-26 TSOP-5 TSOP-6 SOT-28 SOT-223 SOP-5/7/8/10 SOP-8Expose SSOP-14 PL-4/S-4 TO-92 P-DIP-8 P-DIP-14/16 MSOP-8 MSOP-10 TO-220/262/263-3/5 TO-251/252 TO-220/263-3 TO-251/252

220N04T2

Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA220N04T2-7 VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) (IXTA.7) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V

220N04

Contextual Info: Preliminary Technical Information Trench T2TM Power MOSFET IXTA220N04T2-7 VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) (IXTA.7) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40

Contextual Info: C S-263 SILICON MONOLITHIC LINEAR AMPLIFIER Low Level See S tandard P ackage C o n fig u ra tio n S ketch No. 7 (TO -72 Metal C an) on pages 4 & 5. DESCRIPTION The CS-263 is a s ilic o n m o n o lith ic in te g ra te d c irc u it a m p lifie r in a TO -72 package.

Contextual Info: Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 IXFA230N075T2-7 = 75V = 230A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (7-lead) Symbol Test Conditions VDSS TJ = 25°C to 175°C

T230N

Abstract: IXFA230N075T2 IXFA230N075T2-7
Contextual Info: Advance Technical Information IXFA230N075T2-7 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 = 75V = 230A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (7-lead) Symbol Test Conditions VDSS TJ = 25°C to 175°C

Contextual Info: Preliminary Technical Information Trench T2TM Power MOSFET IXTA220N04T27 VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) (IXTA.7) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V

220N04

Contextual Info: TrenchT2TM Power MOSFET VDSS ID25 IXTA220N04T2-7 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V

Contextual Info: TrenchMVTM Power MOSFET VDSS ID25 IXTA130N10T7 = 100V = 130A Ω ≤ 9.1mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) (IXTA.7) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

220N04T2

Contextual Info: TrenchT2TM Power MOSFET IXTA220N04T2-7 VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V

Contextual Info: IXTA220N04T2-7 TrenchT2TM Power MOSFET VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) 1 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40

IXTA130N10T7

Abstract: 130N10T Package to 263-7 s635
Contextual Info: TrenchMVTM Power MOSFET IXTA130N10T7 VDSS ID25 = 100V = 130A Ω ≤ 9.1mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) (IXTA.7) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA260N055T2-7 VDSS ID25 = 55V = 260A Ω ≤ 3.3mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

IXTA230N075T2-7

Abstract: 230n0
Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA230N075T2-7 VDSS ID25 = 75V = 230A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions VDSS TJ = 25°C to 175°C Maximum Ratings 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA230N075T2-7 VDSS ID25 = 75V = 230A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions VDSS TJ = 25°C to 175°C Maximum Ratings 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA200N055T2-7 VDSS ID25 = 55V = 200A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET VDSS ID25 IXTA300N04T2-7 = 40V = 300A Ω ≤ 2.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

IXTA260N055T2-7

Abstract: 260N055T2
Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA260N055T2-7 VDSS ID25 = 55V = 260A Ω ≤ 3.3mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

IXTA200N055T2-7

Abstract: IXTA200N055T2 200N055
Contextual Info: Preliminary Technical Information IXTA200N055T2-7 TrenchT2TM Power MOSFET VDSS ID25 = 55V = 200A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

0805YC103KAT2A

Abstract: 0805ZC105KAT2A 1210ZC106KAT2A LP38853 LP38853S-ADJ an-1504 national
Contextual Info: CFF = 1 / 2 x π x FZ x R1 Introduction This board is designed to allow the evaluation of the LP38853S-ADJ Voltage Regulator. Each board is assembled and tested in the factory. This evaluation board has the TO-263 7-lead package mounted, and the output voltage is

TS7B

Contextual Info: 7 Lead Molded TO-263 NS Package Number TS7B All dimensions are in inches millimeters LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL

Contextual Info: User's Guide SNVA178C – November 2006 – Revised April 2013 AN-1504 LP38853S-ADJ Evaluation Board 1 Introduction This board is designed to allow the evaluation of the LP38853S-ADJ Voltage Regulator. Each board is assembled and tested in the factory. This evaluation board has the TO-263 7-lead package mounted, and

14MQ

Abstract: P7060
Contextual Info: CEP7060L/CEB7060L March 1998 N-Channel Logic Level Enhancement Mode Field Effect FEATURES • 6 0 V , 7 5 A , R ds on =14 itiQ @ V g s =5V. • Super high dense cell design for extremely low Rds(on>. • High power and current handling capability. • TO-220 & TO-263 package.