230N0 Search Results

Contextual Info: Advance Technical Information Trench Gate Power MOSFET IXTF 230N085T VDSS ID25 = 85 V = 125 A Ω ≤ 4.9 mΩ RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

230n06l

Abstract: 230n06 IPB230N06L3 G IPP230N06L3 IPP230N06L3 G IPB230N06L3 JESD22 PG-TO220-3 ipp230n06 D443
Contextual Info: 230N06L3 G 230N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max 23 mΩ ID 30 A • Excellent gate charge x R DS(on) product (FOM)

230n06l

Contextual Info: 230N06L3 G 230N06L3 G Type OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS on product (FOM) VDS 60 V RDS(on),max

230N06L

Abstract: smd diode g5
Contextual Info: 230N06L G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS on ,max 23 mΩ ID 30 A • 175 °C operating temperature • Pb-free lead plating, RoHS compliant

230N06L

Abstract: 230n06
Contextual Info: 230N06L G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS on ,max 23 mΩ ID 30 A • 175 °C operating temperature • Pb-free lead plating, RoHS compliant

230N06N

Abstract: ipd230n06n
Contextual Info: 230N06N G OptiMOS Power-Transistor Product Summary Features • For dc/dc converters and sync. rectification • N-channel enhancement - normal level V DS 60 V R DS on ,max 23 mΩ ID 30 A • 175 °C operating temperature • Pb-free lead plating, RoHS compliant

230n06l

Contextual Info: 230N06L3 G 230N06L3 G Type OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters VDS 60 V RDS on ,max 23 mW ID 30 A • Excellent gate charge x R DS(on) product (FOM)

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

230N06L

Abstract: IPP230N06L3 G IPP230N06L3 230n06 IEC61249-2-21 IPB230N06L3 JESD22 PG-TO220-3 J-STD-20
Contextual Info: Type 230N06L3 G 230N06L3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 23 mΩ ID 30 A • Excellent gate charge x R DS(on) product (FOM)

Contextual Info: 230N06N G OptiMOS Power-Transistor Product Summary Features • For dc/dc converters and sync. rectification • N-channel enhancement - normal level V DS 60 V R DS on ,max 23 mΩ ID 30 A • 175 °C operating temperature • Pb-free lead plating, RoHS compliant

230N06N

Abstract: 230n06
Contextual Info: 230N06N G OptiMOS Power-Transistor Product Summary Features • For dc/dc converters and sync. rectification • N-channel enhancement - normal level V DS 60 V R DS on ,max 23 mΩ ID 30 A • 175 °C operating temperature • Pb-free lead plating, RoHS compliant