TO-262 MOSFET DATASHEET Search Results

Contextual Info: International Rectifier Product Detail Page Page 1 of 2 Part Se Part: AUIRF4905L Description: Automotive Q101 -55V Single P-Channel HEXFET Power MOSFET in a TO-262 Package Support Docs: N/A Commercial Datasheet Automotive Market IR serves the automotive market with a dedicated product portfolio, with high quality and automotive

Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.050 46 Qgs (nC) 11 Qgd (nC) 22 Configuration Single D2PAK (TO-262) G G D

IRFZ14L

Abstract: IRFZ14S IRFZ14STRL SiHFZ14L SiHFZ14S SiHFZ14STL SiHFZ44L
Contextual Info: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single DESCRIPTION D D2PAK (TO-263) I2PAK (TO-262) G G D S • Halogen-free According to IEC 61249-2-21

FT220X

Contextual Info: FT220X USB 4-BIT SPI/FT1248 IC Datasheet Version 1.2 Document No.: FT_000629 Clearance No.: FTDI# 262 Future Technology Devices International Ltd. FT220X USB 4-BIT SPI/FT1248 IC The FT220X is a USB to FTDI’s proprietary FT1248 interface and the following advanced features:

FT220X

Contextual Info: FT220X USB 4-BIT SPI/FT1248 IC Datasheet Version 1.3 Document No.: FT_000629 Clearance No.: FTDI# 262 Future Technology Devices International Ltd. FT220X USB 4-BIT SPI/FT1248 IC The FT220X is a USB to FTDI’s proprietary FT1248 interface and the following advanced features:

Contextual Info: FT220X USB 4-BIT SPI/FT1248 IC Datasheet Version 1.1 Document No.: FT_000629 Clearance No.: FTDI# 262 Future Technology Devices International Ltd. FT220X USB 4-BIT SPI/FT1248 IC The FT220X is a USB to FTDI‟s proprietary FT1248 interface and the following advanced features:

FT220X

Abstract: FT200X free circuit diagram of USB modem FT220XQ-R ft232r connection to android FT200XD FT232RBitBangModes FT232R timing diagram android set top box CIRCUIT usb ferrite bead ft232r
Contextual Info: FT220X USB 4-BIT SPI/FT1248 IC Datasheet Version 1.0 Document No.: FT_000629 Clearance No.: FTDI# 262 Future Technology Devices International Ltd. FT220X USB 4-BIT SPI/FT1248 IC The FT220X is a USB to FTDI‟s proprietary FT1248 interface and the following advanced features:

FT1248

Abstract: FT220X 4K-32
Contextual Info: FT220X USB 4-BIT SPI/FT1248 IC Datasheet Version 1.1 Document No.: FT_000629 Clearance No.: FTDI# 262 Future Technology Devices International Ltd. FT220X USB 4-BIT SPI/FT1248 IC The FT220X is a USB to FTDI‟s proprietary FT1248 interface and the following advanced features:

AS1860

Abstract: AS1851
Contextual Info: AS1860 — 60W/90W PoE PD Controllers with HV Isolation and Quad DC-DC Outputs GENERAL DESCRIPTION FEATURES The AS1860 integrates Akros GreenEdge Isolation technology with next generation Power-over-Ethernet PoE PD and integrated isolated high speed digital communication to deliver up to 90W to an

IRLML6302

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1259A IRLML6302 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching VDSS = -20V RDS(on) = 0.60Ω

AS1851

Contextual Info: AS1851/31 — Digital Power PoE PD Controllers w/HV Isolation & Synchronous DC-DC Converter GENERAL DESCRIPTION Typical Applications The AS1851 and AS1831 devices each integrate Akros GreenEdge High Voltage Isolation technology with Powerover-Ethernet PoE PD and Synchronous DC-DC power

Contextual Info: FDC2612 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

AN080

Abstract: AS18X4 AS1844
Contextual Info: AS1854/44/34/24 — Digital Power PoE PD Controllers with HV Isolation and Quad DC-DC Outputs GENERAL DESCRIPTION Typical Applications The AS18x4 product family integrates Akros GreenEdge Isolation technology with next generation Power-overEthernet PoE PD and power conversion technology to

Contextual Info: PRODUCT DATASHEET AAT1409 SwitchRegTM 8 Channel LED Backlight Driver with Integrated Boost and High Frequency Direct PWM Dimming General Description Features The AAT1409 is a highly integrated, high efficiency LED backlight solution for notebook computers, monitors and

fcp25n60

Abstract: FCP25N60N
Contextual Info: FCP25N60N_F102 N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology

Contextual Info: FCI25N60N_F102 N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology

Contextual Info: FCH25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 126 mΩ Features Description • RDS on = 108 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from

Contextual Info: FCI25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from

FCH25N60

Contextual Info: FCH25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 126 mΩ Features Description • RDS on = 108 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from

Contextual Info: FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FCP25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from

Contextual Info: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD Outline VDSS 1200V RDS on (Typ.) 80m ID 40A PD 262W Features TO-247 Inner circuit 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery

Contextual Info: SCT2080KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 80m ID 40A PD 262W Features TO-247 Inner circuit 1) Low on-resistance (2) 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source (1) 4) Easy to parallel

HUF75344A3

Abstract: Mosfet MARKING A1
Contextual Info: HUF75344A3 tm N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ Features Description • RDS on = 6.5mΩ ( Typ.)@ VGS = 10V, ID = 75A • This N-channel power MOSFET is produced using Fairchild Semiconductor’s innovative UItraFET process. This advanced process technology achieves the lowest possible